Opening the terahertz window with integrated diode circuits

The terahertz region of the electromagnetic spectrum, spanning from 100 GHz through 10 THz, is of increasing importance for a wide range of scientific, military and commercial applications. This interest is spurred by the unique properties of this spectral band and the very recent development of convenient terahertz sources and detectors. However, the terahertz band is also extremely challenging, in large part because it spans the transition from traditional electronics to photonics. This paper reviews the importance of this frequency band and summarizes the efforts of scientists and engineers to span the "terahertz technology gap." The emphasis is on solid-state circuits that use nonlinear diodes to translate the functionality of microwave technology to much higher frequencies.     

Transistor oscillator and amplifier grids

Although quasi-optical techniques are applicable to a large variety of solid-state devices, special attention is given to transistors, which are attractive because they can be used as either amplifiers or oscillators. Experimental results for MESFET bar-grid and planar grid oscillators are presented. A MESFET grid amplifier that receives only vertically polarized waves at the input and radiates horizontally polarized waves at the output is discussed. These planar grids can be scaled for operation at millimeter- and submillimeter-wave frequencies. By using modern IC fabrication technology, planar grid oscillators and amplifiers containing thousands of devices can be built, thereby realizing an efficient means for large-scale power combining     

A 5 mW and 5% efficiency 210 GHz InP-based heterostructure barrier varactor quintupler

This letter reviews the design, construction, and measurement of a 210 GHz heterostructure barrier varactor frequency quintupler. The quintupler utilizes planar heterostructure barrier varactors (HBVs) based on the InGaAs/InAlAs/AlAs material system and has produced a measured output power of 5.2 mW with 5.2% conversion efficiency at 210 GHz. This performance is comparable to the state-of-the-art results reported in the literature for HBV frequency triplers operating at millimeter and submillimeter wavelengths.     

Planar MESFET grid oscillators using gate feedback

A method for quasi-optically combining the output power of MESFETs in which drain and source leads couple directly to the radiated field is introduced. The design consists of a planar grid of devices placed in a Fabry-Perot cavity. Capacitive feedback is provided to the gate, allowing oscillation at much higher frequencies than previous grids. The oscillation frequency is dependent on the device characteristics, the resonator cavity, and the symmetries of the grid. A transmission-line model for the grid is discussed and used to design two oscillator arrays. A 16-element grid has produced 335 mW of power at 11.6 GHz with a DC-to-RF conversion efficiency of 20%. This design was scaled to produce a 36-element grid oscillator with output power of 235 mW at 17 GHz. These results represent a significant improvement in the performance of planar grid oscillators. The planar configuration of the grid is very convenient for monolithic integration and is easily scalable to millimeter-wave frequencies     

A 100-MESFET planar grid oscillator

A 100-MESFET oscillator which gives 21 W of CW effective radiated power (ERP) with a 16-dB directivity and a 20% DC-to-RF conversion efficiency at 5 GHz is presented. The oscillator is a planar grid structure periodically loaded with transistors. The grid radiates and the devices combine quasi-optically and lock to each other. The oscillator can also be quasi-optically injection-locked to an external signal. The planar grid structure is very simple. All of the devices share the same bias, and they can be power and frequency tuned with a mirror behind the grid or dielectric slabs in front of it. An equivalent circuit for an infinite grid predicts the mirror frequency tuning. The planar property of the oscillator offers the possibility of a wafer-scale monolithically integrated source. Thousands of active solid-state devices can potentially be integrated in a high-power source for microwave or millimeter-wave applications     

A compact quadrature coupler based on coupled artificial transmission lines

A new compact quadrature hybrid based upon artificial transmission lines (ATLs) is presented. Miniaturization is achieved through reduced even- and odd-mode phase velocities which are achieved using capacitive loading with interdigital open-circuited stubs. A proof-of-concept microstrip implementation of the quadrature hybrid exhibits performance comparable to a conventional branch-line coupler while occupying only 14% of the area. The compact structure of the hybrid is useful for RF applications and is suitable for scaling to frequencies above 100GHz where the size of shielded-microstrip components must be limited to prevent excitation of high-order modes.     

Bar-grid oscillators

Grid oscillators are an attractive way of obtaining high power levels from the solid-state devices, since potentially the output powers of thousands of individual devices can be combined. The active devices do not require an external locking signal, and the power combining is done in free space. Thirty-six transistors were mounted on parallel brass bars, which provide a stable bias and have a low thermal resistance. The output power degraded gradually when the devices failed. The grid gave an effective radiated power of 3 W at 3 GHz. The directivity was 11.3 dB, and the DC-to-RF efficiency was 22%. Modulation capabilities of the grid were demonstrated. An equivalent circuit model for the grid is derived, and comparison with experimental results is shown     

Accuracy of the conductance catheter for measurement of ventricularvolumes seen clinically: effects of electric field homogeneity andparallel conductance

The conductance-volume method is an important clinical tool which allows the assessment of left ventricular function in vivo. However, the accuracy of this method is limited by the homogeneity of electric field the conductance catheter produces and the parallel conductance of surrounding structures. This paper examines these sources of error in volumes seen clinically, The characteristics of electric field within a chamber were examined using computer simulation. Nonconductive and conductive models were constructed and experimental measurements obtained using both single-field (SF) and dual-field (DF) excitation. Results from computer simulations and in vitro measurements were compared to validate the proposed theoretical model of conductance-volume method. The effects of field homogeneity and significance of parallel conductance in volume measurement were then determined. The results of this study show that DF provide a more accurate measure of intraventricular volume than SF, especially at larger volumes. However, both significantly underestimate true volume at larger volumes. In addition, the parallel conductance due to the chamber wall is significant at small volumes, but diminishes at larger volumes. Furthermore, the effect of parallel conductance beyond the chamber wall may be negligible. This study demonstrates the limitations in applying current conductance technology to patients with dilated hearts     

Nonohmic Contact Planar Varactor Frequency Upconverters for Terahertz Applications

The development of tunerless millimeter and sub-millimeter wavelength frequency upconverters with integrated planar varactor circuits is described in this paper. An upconverter operating at 200 GHz is implemented as a proof-of-principle demonstration, and designs using both ohmic and nonohmic contacts are tested. The nonohmic contact facilitates fabrication. Both the ohmic and nonohmic devices produced similar performance. Using the nonohmic cathode contact technique and an air-bridge process, 1.6-THz integrated upconverter circuits are fabricated, and the conversion loss is measured to be approximately 22 dB with 40 muW of output sideband power with a 10-GHz microwave pump. A phase-shift measurement for the 1.6-THz upconverter using a standing wave method is described and used to corroborate the results     

A millimeter-wave six-port reflectometer based on thesampled-transmission line architecture

This letter presents a proof-of-concept implementation of a millimeter-wave reflectometer for measuring complex reflection coefficients. The reflectometer is based on the six-port architecture and consists of a single section of WR-10 rectangular waveguide and a set of three Schottky power detectors. Design considerations as well as measurements in the 75 to 110 GHz range are described and discussed. Because of its simple architecture, the reflectometer is amenable to scaling for measurements well into the submillimeter-wave region of the spectrum