Exposed Die-Top Encapsulation Molding for an Improved High- Performance Flip Chip BGA Package

The recent advancement in high- performance semiconductor packages has been driven by the need for higher pin count and superior heat dissipation. A one-piece cavity lid flip chip ball grid array (BGA) package with high pin count and targeted reliability has emerged as a popular choice. The flip chip technology can accommodate an I/O count of more than five hundreds500, and the die junction temperature can be reduced to a minimum level by a metal heat spreader attachment. None the less, greater expectations on these high-performance packages arose such as better substrate real estate utilization for multiple chips, ease in handling for thinner core substrates, and improved board- level solder joint reliability. A new design of the flip chip BGA package has been looked into for meeting such requirements. By encapsulating the flip chip with molding compound leaving the die top exposed, a planar top surface can be formed. A, and a flat lid can then be mounted on the planar mold/die top surface. In this manner the direct interaction of the metal lid with the substrate can be removed. The new package is thus less rigid under thermal loading and solder joint reliability enhancement is expected. This paper discusses the process development of the new package and its advantages for improved solder joint fatigue life, and being a multichip package and thin core substrate options. Finite-element simulations have been employed for the study of its structural integrity, thermal, and electrical performances. Detailed package and board-level reliability test results will also be reported     

A Neural Network Approach for Signal Detection in Digital Communications

In this paper, we propose a new approach for signal detection in wireless digital communications based on the neural network with transient chaos and time-varying gain (NNTCTG), and give a concrete model of the signal detector after appropriate transformations and mappings. It is well known that the problem of the maximum likelihood signal detection can be described as a complex optimization problem that has so many local optima that conventional Hopfield-type neural networks fail to solve. By refraining from the serious local optima problem of Hopfield-type neural networks, the NNTCTG makes use of the time-varying parameters of the recurrent neural network to control the evolving behavior of the network so that the network undergoes the transition from chaotic behavior to gradient convergence. It has richer and more flexible dynamics rather than conventional neural networks only with point attractors, so that it can be expected to have much ability to search for globally optimal or near-optimal solutions. After going through a transiently inverse-bifurcation process, the NNTCTG can approach the global optimum or the neighborhood of global optimum of our problem. Simulation experiments have been performed to show the effectiveness and validation of the proposed neural network based method for the signal detection in digital communications.     

Diode-pumped 671 nm laser frequency doubled by CPM LBO

A design of diode-pumped high-efficiency Nd:YVO₄/LBO red laser is reported. Using critical phase-matching (CPM) LBO, 671 nm red laser was obtained from 1342 nm light by intracavity frequency doubling. With an incident pump laser of 800 mW, using type-I and type-II CPM LBO, 97 and 52 mWTEM₀₀ mode red laser outputs were obtained, with optical-to-optical conversion efficiencies of up to 12.1% and 6.5%, respectively.     

ADI-FDTD Method With Fourth Order Accuracy in Time

This letter presents an unconditionally stable alternating direction implicit finite-difference time-domain (ADI-FDTD) method with fourth order accuracy in time. Analytical proof of unconditional stability and detailed analysis of numerical dispersion are presented. Compared to second order ADI-FDTD and six-steps SS-FDTD, the fourth order ADI-FDTD generally achieves lower phase velocity error for sufficiently fine mesh. Using finer mesh gridding also reduces the phase velocity error floor, which dictates the accuracy limit due to spatial discretization errors when the time step size is reduced further.     

Polarized Lidar Reflectance Measurements of Vegetation at Near-Infrared and Green Wavelengths

There is growing interest in the use of lidar for remote sensing of vegetation owing to the emergence of reliable and rugged lasers and highly sensitive detectors. Lidar remote sensing has a distinct advantage over conventional techniques in vegetation remote sensing due to its capability for three-dimensional characterization of vegetative targets. The Multiwavelength Airborne Polarimetric Lidar (MAPL) system was developed primarily for vegetation remote sensing applications from an airborne platform of up to 1,000 -m altitude. The lidar system has full waveform capture and polarimetric measurement capability at two wavelengths in the near-infrared (1064 nm) and the green (532 nm) spectral regions. This study presents preliminary ground-based lidar reflectance measurements on a variety of deciduous and coniferous trees under fully foliated conditions with a view towards tree species discrimination. Variations in the reflectance characteristics of selected deciduous trees under unfoliated and fully foliated conditions were also investigated. Our study reveals distinct differences in the reflectance characteristics of various trees.     

Laser writing techniques for photomask fabrication using a femtosecond laser

Photomasks are the backbone of microfabrication industries. Currently they are fabricated by a lithographic process, which is very expensive and time consuming since it is a multi-step process. These issues can be addressed by fabricating photomasks by direct femtosecond laser writing, which is a single-step process and comparatively cheaper and faster than lithography. In this paper we discuss our investigations on the effect of two types of laser writing techniques, namely front- and rear-side laser writing, with regard to the feature size and the edge quality of a feature. It is proved conclusively that for the patterning of masks, front-side laser writing is a better technique than rear-side laser writing with regard to smaller feature size and better edge quality. Moreover the energy required for front-side laser writing is considerably lower than that for rear-side laser writing. Received: 22 May 2001 / Accepted: 14 September 2001 / Published online: 17 October 2001     

Chemical Constituents of Ligusticum sinensis Oliv.

The new phenylpropanoid diglycoside ligusinenoside A ( 1 ), and the two new 8,4′‐oxyneolignan(‘8‐O‐4′‐neolignan’) diglycosides ligusinenosides B ( 2 ) and C ( 3 ), together with nine known compounds, were isolated from the rhizomes of Ligusticum sinensis Oliv. The structures of 1 – 3 were elucidated on the basis of spectroscopic analyses.     

淄博广电总台7+1讯道数字分量转播车系统

本文以淄博广电总台7 1讯道数字分量转播车为例,浅谈该车的视频、音频系统以及设备配置情况.     

On the validity of the amphoteric-defect model in gallium arsenide and a criterion for Fermi-level pinning by defects

Using the theoretically calculated point-defect total-energy values of Baraff and Schlüter in GaAs, anamphoteric-defect model has been proposed by Walukiewicz to explain a large number of experimental results. The suggested amphoteric-defect system consists of two point-defect species capable of transforming into each other: the doubly negatively charged Ga vacancyV _Ga ^2– and the triply positively charged defect complex (AS_Ga+V _As)³⁺, with As_Ga being the antisite defect of an As atom occupying a Ga site andV _As being an As vacancy. When present in sufficiently high concentrations, the amphoteric defect systemV _Ga ^2– /(As_Ga+V _As)³⁺ is supposed to be able to pin the GaAs Fermi level at approximately theE _v +0.6 eV level position, which requires that the net free energy of theV _Ga/(As_Ga+V _As) defect system to be minimum at the same Fermi-level position. We have carried out a quantitative study of the net energy of this defect system in accordance with the individual point-defect total-energy results of Baraff and Schlüter, and found that the minimum net defect-system-energy position is located at about theE _v +1.2 eV level position instead of the neededE _v +0.6 eV position. Therefore, the validity of the amphoteric-defect model is in doubt. We have proposed a simple criterion for determining the Fermi-level pinning position in the deeper part of the GaAs band gap due to two oppositely charged point-defect species, which should be useful in the future.