智慧标识网络服务机理研究进展及安全性分析

随着互联网规模的不断扩大以及应用场景的多元化,传统网络无法很好地满足新业务的动态多样化需求,因此国内外对未来网络展开了深入研究.本文首先介绍了未来互联网体系架构的研究现状.其次,介绍了具备"三层、两域"特征的智慧标识网络(Smart Identifier NETwork,SINET)体系架构,然后重点阐述了SINET服务机理在服务的命名与解析、路由机制、服务缓存、移动性、传输控制机制、可扩展性、绿色节能等关键技术方面取得的研究进展,并进一步详细分析了SINET服务机理的安全性.最后总结了SINET面临的挑战,对SINET服务机理在大规模场景部署中可能存在的问题做出讨论.     

突出矿井瓦斯抽放限制影响因素的AHP-熵权法评价模型

为提高煤与瓦斯突出矿井瓦斯抽放效果,建立了3个一级指标、14个二级指标的突出矿井瓦斯抽放限制影响因素评价指标体系,利用AHP和熵权法分别确定指标因子主、客观权重.通过实地调研分析和反馈验证了AHP-熵权法的可行性和正确性,利用加权平均法确定评价模型的综合权重.研究表明:封孔方式、钻孔半径、抽放时间、煤体裂隙发育程度和抽放负压是目前影响煤矿瓦斯抽放效果的主控因素.     

Nanocomposite hydrogel consisting of Na‐montmorillonite with enhanced mechanical properties

A new kind of nanocomposite (NC) hydrogel with Na‐montmorillonite (MMT) is presented in this article. The NC hydrogels were synthesized by free radical copolymerization of acrylamide and (3‐acrylamidopropyl) trimethylammonium chloride (ATC) in the presence of MMT and N,N′‐methylene‐bis‐acrylamide used as chemical cross‐linker. Due to the cation‐exchange reaction between MMT and ATC (cationic monomer) during the synthesis of NC hydrogels, MMT platelets were considered chemical “plane” cross‐linkers, different from “point” cross‐linkers. With increasing amount of MMT, the crosslinking degree enhanced, causing a decrease of the swelling degree at equilibrium. Investigations of mechanical properties indicated that NC hydrogels exhibited enhanced strength and toughness, which resulted from chemical interaction between exfoliated MMT platelets and polymer chains in hydrogels. Dynamic shear measurements showed that both storage modulus and loss modulus increased with increasing MMT content. The idea described here provided a new route to prepare hydrogels with high mechanical properties by using alternative natural Na‐MMT. © 2015 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2015 , 53, 1020–1026     

Lipase‐Supported Metal–Organic Framework Bioreactor Catalyzes Warfarin Synthesis

A green and sustainable strategy synthesizes clinical medicine warfarin anticoagulant by using lipase‐supported metal–organic framework (MOF) bioreactors (see scheme). These findings may be beneficial for future studies in the industrial production of chemical, pharmaceutical, and agrochemical precursors.     

用增量的累积量方法测量大气风场

为了在非平稳、非线性条件下能得到真实风场的良好估计,提出了一种用空间分布天线（SA）雷达信号的增量累积量测量大气风场参数的方法。该方法基于结构函数方法,利用高阶累计量在信息处理中的特性,用零延迟的增量累计量求解平均水平风速等具体参量，并在大气散射模型基础上对增量累积量方法进行了数值模拟,得出了同理论分析一致的结果.分析和计算表明,该方法完全适用于局地平稳条件，可以减小风场参量估计对天线间距的敏感度；阶数k≥3时,对高斯噪声有很强抑制;同时可以得到风场参量的高阶估计，这是普通的二阶方法（如全相关分析、全谱分析）不具备的。     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.     

拆边法求最短路径

本文利用局部比较法 ,在图中定义子图、无效路径、以及可去边 .利用推导的有关定理 ,拆去可去边 ,利用最短路径相同的等价性 ,达到化简图 ,从而求出最短路径     

左Clifford半群的特征与结构

作为Clifford半群的推广,本文定义了左Clifford半群,给出了它的许多特征,建立了它的半格分解结构和ξ直积结构。还讨论了两类特殊情形。     

从诺贝尔物理学奖看光学的发展

从一个新的角度分析、讨论了光学的发展过程.并对光学今后的发展做了展望.     

生长温度对碳纳米管阴极场发射性能的影响

碳纳米管(Carbon Nanotubes,CNTs)场发射平面显示器(Field Emission Display,FED)与其他显示器比较显示了其独特优点,被认为是未来理想的平面显示器之一。碳纳米管阴极作为器件的核心部分,其性能的好坏直接影响显示器的性能。针对30~60英寸(76.2~152.4cm)大屏幕显示器所用的厚膜工艺,即采用丝网印刷法制备了碳纳米管阴极阵列,研究了化学气相沉积法在不同温度下生长的CNTs的场发射电流-电压特性,找到了适合FED用碳纳米管的最佳生长温度。结果表明生长温度越高(750℃),CNTs场发射性能越好。并用荧光粉阳极测试这些CNTs的场发射发光显示效果,验证了上述结论。