MPEG-4 AAC解码器在NIOS Ⅱ平台上的实现和优化

给出了MEPG-4AAC实时解码器在NIOSⅡ平台的实现方案，介绍了MPEG-4AAC—LC解码算法及各关键模块优化算法。在完成实时解码要求下，结合NIOSⅡ平台特性，对解码器在软件代码与处理器上进行优化。实验结果表明CPU时钟为80MHz时能达到实时解码要求。     

介质折射率对一维三元光子晶体带隙的影响

利用光学传输矩阵法,数值模拟了一维二元、三元光子晶体的带隙结构,得出:三元光子晶体的主带隙略宽于二元光子晶体的主带隙;三元光子晶体的主带隙主要取决于最高折射率的介质和最低折射率的介质,而与居于两者之间的介质关系不大,并作出了相应的关系曲线。最后推导了三元光子晶体的色散关系。     

A Novel Analytical Approach for Multi-Layer Diaphragm-Based Optical Microelectromechanical-System Pressure Sensors

An optical microelectromechanical-system （MEMS） pressure sensor based on multi-layer circular diaphragm is described and analysed by using the proposed novel analytical approach and the traditional transfer matrix method. The analytical expressions of the deflection of multi-layer diaphragm and absolute optical reflectance are derived respectively. The influence of residual stress on the deflection of diaphragm is also analysed. Simulation results given by the finite element method are consistent with the ones which are analysed by using the analytical approach. The analytical approach will be helpful to design and fabricate the optical MEMS pressure sensors with multi-layer diaphragm based on Fabry-Perot interferometry.     

全双极WTA模型的改进及其实现

提出了一种相似度的新定义，使双极ＷＡＴ模型的实现更加简洁明了。增加一个阈值使系统能判别非存储模式或因其信息量过低而无法鉴定的输入模式，阈值的大小与要求的容错能力有关。双极相似度及阈值通过光学方法实现。阈值的光学实现使系统仍具有照明不变性。通过电路实现取及ＷＴＡ网络的迭代运算。     

IPA模型对Hopfield模型神经网络的改进

考虑Ｈｏｐｆｉｅｌｄ模型中假态之间的布尔逻辑关系，提出利用ＩＰＡ模型对神经网络中的假态进行抑制，并和原网络的性能进行了比较，结果表明：改进后的网络性能比Ｈｏｐｆｉｅｌｄ模型和ＩＰＡ模型均有较大提高。     

用于高数值孔径物镜的可调光瞳滤波器

根据矢量衍射理论，提出了一种用于提高高数值孔径显微物镜纵向分辨率的可调二元环形光瞳滤波器，通过改变滤波器的环半径获得不同的纵向分辨率，并利用共焦显微术点扩散函数的乘积性大大地降低了旁瓣相对主瓣的比值。模拟结果表明，这种新型滤波器不仅可以提高高数值孔径物镜的纵向分辨率，同时基本上不影响横向分辨率。     

准直小孔法自动调焦在激光直写入系统中的应用

本文介绍了一种新的自动调焦方法准直小孔法.对自动调焦的原理和后继电路处理方法作了详细的分析.它具有响应时间短、灵敏度高,能够很好的在激光直接写入系统中克服物镜工作台运动中导轨的不平和轴向窜动所造成的离焦。     

Ar—Kr溶液扩散系数的分子动力学模拟及其与温度的关系

用分子动力学模拟方法研究确定Ａｒ－Ｋｒ溶液的自扩散系数Ｄ１、Ｄ２和互扩散系数Ｄ１２以及它们随温度变化的规律。结果表明，分别用Ｇｒｅｅｎ－Ｋｕｂｏ法和Ｅｉｎｓｔｅｉｎ法得到的扩散系数在数值上一致；该溶液的３种扩散系数均满足Ｄ＝Ｄ０ｅ＾Ｅ／ＲＴ关系。     

STUDIES ON ION IMPLANTATION AND ELECTRICAL PROPERTIES OF POLYACETYLENE FILMS

The effects of ion implantation on ployacetylene films PA have been studied with Ar~+, Fe~+, C1~+, I~+, Na~+ and K~+ ions in the energy range of 15—30 keV. The changes of PA films in the electrical conductivity, due to chemical doping and ion implantation in relation to their structure and depth profiles of impurities, were measured through infrared (ATR/FTIK), Rutherford backscattering spectrometry (RBS) and the four probe technique. In all cases, ion implantation of active ions exhibits the same effects as chemical doping. The formation of p-n junction is observed at the interface of implanted region and chemical doped PA substrate. The mechanism of interaction process between ion beam and polymer is also discussed.