Syntheses,Characterization, and Luminescence Properties of Three Coordination Complexes with Sulfonate-Phenol Anions and Trivalent Metal Ions

Russian Journal of General Chemistry - A dinuclear Tb complex, Tb2(H2L)3(phen)2 (1), and two similar N-donor coordination complexes, Fe(phen)3·HL (2), Fe(bipy)3·HL·5H2O (3) (Na2H2L =...     

贴片机脱机编程的快捷方法

SMT生产线中的大多数加工设备均为数控设备。它们编程所需要的大多数特征数据均可从CAD设计系统中得到。文章介绍了如何从CAD设计系统中导出X、Y坐标数据,并转换成贴片数据的方法和思路,以期引起更多的同行加入到这方面的研究中。     

贴片设备的选择

随着电子工业的飞速发展,贴片设备已被广泛应用于大规模电子组装生产上。文章就贴片机选型时应注意的几个关键技术问题作简单介绍,希望对企业选择贴装设备有一定的帮助。     

高速贴片机优化软件的设计与开发

SMT生产线要达到最大的产量,必须要考虑生产线的效率。贴片机是SMT生产线中的关键设备,因此提高贴片机的生产效率具有十分重要的意义。本文以松下贴片机为例,介绍了贴片机程序优化软件的设计与开发中的思想、方法和经验,希望对从事CAM软件研究的工程人员有一定帮助。     

关于绝对半素环和绝对半素根

本文了绝对半素环的概念，研究了绝对半素与与半素环及素环之间的关系，讨论了由全体绝对半素环类决定的上根－－绝对半半素根及其性质。     

一类广义Schrdinger算子的自伴性与本质谱

本文在一类 Ｌｐ位势Ｖ（ｘ）下建立了广义Ｓｃｈｒｏｄｉｎｇｅｒ算子Ｈ＝（－Δ）ｍ＋Ｖ（ｘ）在Ｃ∞０（Ｒｎ）上的本质自伴性，给出了Ｈ的本质谱的分布．     

Two inequalities involving Hadamard products of positive semi-definite Hermitian matrices

We extend two inequalities involving Hadamard products of positive definite Hermitian matrices to positive semi-definite Hermitian matrices. Simultaneously, we also show the sufficient conditions for equalities to hold. Moreover, some other matrix inequalities are also obtained. Our results and methods are different from those which are obtained by S. Liu in [J. Math. Anal. Appl. 243:458–463(2000)] and B.-Y. Wang et al. in [Lin. Alg. Appl. 302–303: 163–172(1999)].     

电感耦合等离子体原子发射光谱法测定中药方剂煎煮液中的微量元素

本文采用HNO3－H2O2对中药方剂煎煮液进行处理，拟定了电感耦合等离子体原子发射光谱法同时测定试样中12个微量元素的方法，选择了仪器的最佳工作条件，考察了基本效应的影响。在选定条件下，12个微量元素的检出限为0．10－5．0ng/g，相对标准偏差为0.10%-9.5%(n=10),加标回收率为85％－103％。该方法简单、快速，已用于大量样品的检测，分析结果满意。     

场协同理论在椭圆型流动中的数值验证

本文用数值模拟的方法，通过四个椭圆型流动传热的例子验证了场协同理论的正确性．结果表明，场协同理论不仅适合于抛物型流动，亦适合于复杂的有回流的椭圆型流动．     

Improvement of RCA transistor using RTA annealing after theformation of interfacial oxide

A polysilicon emitter RCA transistor (an ultra-thin interfacial oxide layer exists between polysilicon and silicon emitter) is presented which can operate at 77 K for the first time. An ultra-thin (1.5 nm) interfacial oxide layer is grown deliberately between polysilicon and silicon emitter using RCA oxidation and excellent device stability is obtained after rapid thermal annealing (RTA) treatment in nitrogen atmosphere. The RCA transistor exhibits good electrical performance at very low temperature for an emitter area of 3 × 8 μm². The maximum toggle frequency of a 1:2 static divider is 1.2 GHz and 732 MHz at 300 K and 77 K, respectively