High-power 980-nm AlGaAs/InGaAs strained quantum-well laser grown by OMVPE

High-power lattice-strained AlGaAs/InGaAs graded index separate-confinement heterostructure (GRINSCH) quantum-well lasers emitting at a 980-nm wavelength have been grown by organometallic vapor phase epitaxy (OMVPE) and fabricated with a self-aligned ridge-waveguide structure. Using a 3- mu m-wide and 750- mu m-long AR-HR coated laser, 30 mV of optical power was coupled into optical fibers with 28.6% efficiency. A dominating single-lobe far-field radiation pattern was obtained from a wedge-shaped ridge-waveguide laser for output power as high as 240 mW with a maximum output power of 310 mW.<>     

Gain characteristics of 1.55-μm high-speed multiple-quantum-welllasers

We describe the important characteristics of high-speed p-doped compressively strained MQW lasers obtained from comprehensive below-threshold DC measurements. Results of gain and differential gain versus wavelength and carrier density are verified by above-threshold resonance measurements. Measurement-derived design curves of gain, differential gain, and linewidth enhancement factor allow device optimization for high speed and low chirp     

A novel SAL-PINSCH quantum-well laser structure for a pinched beamdivergence

Summary form only given. An edge-emitting strained AlGaAs/InGaAs/GaAs quantum-well laser structure is reported. It has a periodic index separate confinement heterostructure (PINSCH) optical confinement layers for a small beam divergence and high output power. Preliminary measurements of AR/HR-coated self-aligned ridge waveguide lasers show a CW output power of up to 350 mW and a 20° transverse beam divergence at a 980-nm lasing wavelength. This low beam divergence results in a high coupling efficiency of 51% into single-mode fibers. The expanded optical field in PINSCH confinement layers significantly pinches the transverse beam divergence and increases the maximum output power     

Nouveaux thiochlorures de molybdène(II): Mo6Cl10Y (Y = S,Se, Te): Structure et propriétés magnétiques et électriques

The thiochlorides Mo₆Cl₁₀Y (Y = S, Se, Te) have been prepared; they are isostructural with Nb₆I₁₁, space group Pccn, and have four formula units per unit cell. The X-ray structure of Mo₆Cl₁₀Se has been determined from three-dimensional single-crystal counter data and refined to a final R value of 0.053 for 3350 independent reflections. The most important result concerning this structure is a statistical distribution of the Se atom on the unit (Mo₆X′₈) with $\text{X′ ?}\text{7}\text{8}\text{Cl}\text{+}\text{1}\text{8}\text{Se}$: so the compound Mo₆Cl₁₀Se must be formulated $\text{(Mo}{}_6\text{Cl}{}_7\text{Se)Cl}{}_{\mathrm{<mtext>4</mtext><mtext>2</mtext>}}\text{Cl}{}_{\mathrm{<mtext>2</mtext><mtext>2</mtext>}}$. The diamagnetic and dielectric behavior of these new thiochlorides is discussed.     

Sur de nouvelles phases séléniées ternaires du molybdène

The synthesis and the crystal properties of new selenides of formula M_xMo₃Se₄ are described. If M = Zn, Ag, Cd, Sn and Pb, they are stoichiometric with x = 0.6; if M = Fe, Mn, Cr, V, Ti, triclinic solid solutions are observed with 0.5 < x < 0.7; if M = Cu, Co, Ni, rhombohedral solid solutions are obtained with 0 < x < 1.4 for M = Cu, 0 < x < 0.7 for M = Co and 0 < x < 0.8 for M = Ni All these phases can be deduced from the Mo₃Se₄ structure by introducing metal atoms into the tunnels between the “Mo₆Se₈” metal atom cluster configuration.     

Crystallochemistry of some new niobium bromides with (Nb6Br18) units: Structures of CsErNb6Br18 and Cs2EuNb6Br18

Two new series of Nb₆ bromides, CsRENb₆Br₁₈ (RE = all the lanthanides excepted Eu and Yb, + Y) (type H ) and M₂RENb₆Br₁₈ (M = Cs, Rb, Tl; RE = Eu, Yb) (type R ) have been isolated. The crystal structures of CsErNb₆Br₁₈ and Cs₂EuNb₆Br₁₈, isotypic with the corresponding chlorides, have been determined by single crystal X-ray diffraction data. The (Nb₆Br₁₈) intra-unit strength is related to the nature and the charge of the counter cation. A comparison between the corresponding chlorides and bromides series, based on the chemical properties and the size of the halogen is discussed.