排序方式: 共有38条查询结果,搜索用时 9 毫秒
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Mitch K.P Leung 《Analytica chimica acta》2003,491(1):15-25
A covalent interaction-based molecularly imprinted polymer (MIP) material for 3-chloro-1,2-propanediol (3-MCPD), a post-testicular anti-fertility agent and possible carcinogen and mutagen in food products containing acid-hydrolyzed vegetable proteins, has been successfully fabricated using 4-vinylphenylboronic acid as the functional monomer. Rebinding assay revealed that the binding constant, KB, for the receptor sites and non-specific sites are 1.93±0.1×104 and 2.74±0.7×102 M−1, respectively. The estimated number of receptor site, Bmax, imprinted is 123.3±3 μmol/g of MIP. The MIP material is able to act as a potentiometric chemosensor for 3-MCPD via increase in Lewis acidity of the receptor sites upon reaction of the arylboronic acid with 3-MCPD to form the more acidic arylboronic acid esters. A simple pH glass electrode is sufficient to monitor the analyte-specific rebinding. In unbuffered aqueous media, linear potentiometric response from 0 to 350 ppm of 3-MCPD can be achieved. The MIP-based chemosensing in a soya sauce matrix has also been attempted. It is found that the dynamic range of the potentiometric chemosensing response of the MIP material is much reduced, probably due to the blocking or deactivation of receptor sites by interferents in soya sauces. Nevertheless, the present work demonstrated the feasibility of using MIP-based chemosensors as semi-quantitative analytical tools for screening purposes in quality control of food products. 相似文献
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Synthesis and Properties of Semiconducting Bispyrrolothiophenes for Organic Field‐Effect Transistors 下载免费PDF全文
Crystalann Jones Dr. Damien Boudinet Dr. Yu Xia Mitch Denti Adita Das Dr. Antonio Facchetti Prof. Dr. Tom G. Driver 《Chemistry (Weinheim an der Bergstrasse, Germany)》2014,20(20):5938-5945
A series of new highly soluble bispyrrolothiophenes were synthesized from vinyl azides by using transition‐metal‐catalyzed C?H‐bond functionalization. In addition to modifying the substituents present on the end‐pyrrolothiophene moieties, the arene linker in between the two units was also varied. The solution‐state properties and field‐effect‐transistor (FET) electrical behavior of these bispyrrolothiophenes was compared. Our investigations identified that the optical properties and oxidation potential of our compounds were dominated by the pyrrolothiophene unit with a λmax value of approximately 400 nm and oxidation at approximately 1 V. FET devices constructed with thin films of these bispyrrolothiophenes were also fabricated by means of thin‐film solution processing. One of these compounds, a bispyrrolothiophene linked with benzothiodiazole, exhibits a mobility of approximately 0.3 cm2 V?1 s?1 and the Ion/Ioff value is greater than 106. 相似文献
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Mitch A.Lewis 《通讯世界》2008,(3):76-77
过去的一年,流行的视频网站、兴趣社区(Communities of interest)、社交网络的普及和个性化需求出现成倍增长。虽然以分钟计算,多媒体服务和使用率均创下历史新高,但服务提供商和内容提供者仍然在根据消费者和企业的需求,不断调整着他们的收益和推出新服务模式。 相似文献
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C.J. Tun C.H. Kuo Y.K. Fu C.W. Kuo Mitch M.C. Chou G.C. Chi 《Journal of Crystal Growth》2009,311(14):3726-3730
This study demonstrates a pure c-plane AlGaN epilayer grown on a γ-LiAlO2 (1 0 0) (LAO) substrate with an AlN nucleation layer grown at a relatively low temperature (LT-AlN) by metal-organic chemical vapor deposition (MOCVD). The AlGaN film forms polycrystalline film with m- and c-plane when the nucleation layer grows at a temperature ranging from 660 to 680 °C. However, a pure c-plane AlGaN film with an Al content of approximately 20% can be obtained by increasing the LT-AlN nucleation layer growth temperature to 700 °C. This is because the nuclei density of AlN increases as the growth temperature increases, and a higher nuclei density of AlN deposited on LAO substrate helps prevent the deposition of m-plane AlGaN. Therefore, high-quality and crack-free AlGaN films can be obtained with a (0 0 0 2) ω-rocking curve FWHM of 547 arcsec and surface roughness of 0.79 nm (root-mean-square) using a 700-°C-grown LT-AlN nucleation layer. 相似文献
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Evan Xuguang Chen Michael Gehm Ryan Danell Mitch Wells Jeffrey T. Glass David Brady 《Journal of the American Society for Mass Spectrometry》2014,25(7):1295-1304
Conventionally, quadrupole ion trap mass spectrometers eject ions of different mass-to-charge ratio (m/z) in a sequential fashion by performing a scan of the rf trapping voltage amplitude. Due to the inherent sparsity of most mass spectra, the detector measures no signal for much of the scan time. By exploiting this sparsity property, we propose a new compressive and multiplexed mass analysis approach—multi Resonant Frequency Excitation (mRFE) ejection. This new approach divides the mass spectrum into several mass subranges and detects all the subrange spectra in parallel for increased mass analysis speed. Mathematical estimation of standard mass spectrum is demonstrated while statistical classification on the parallel measurements remains viable because of the sparse nature of the mass spectra. This method can reduce mass analysis time by a factor of 3–6 and increase system duty cycle by 2×. The combination of reduced analysis time and accurate compound classification is demonstrated in a commercial quadrupole ion trap (QIT) system. Figure
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D.R. Hang Mitch M.C. Chou Liuwen Chang J.L. Lin M. Heuken 《Journal of Crystal Growth》2009,311(10):2919-2922
We investigate the optical properties of m-plane InGaN/GaN multiple quantum well grown on LiAlO2 substrate by metal organic vapor phase epitaxy. Polarization-dependent photoluminescence and polarization-dependent photoluminescence excitation measurements have been performed at low temperature to study the optical absorption and emission characteristics. The main emission band possesses large polarization anisotropy which may be attributed to the anisotropic biaxial strain. We found the optical emission is not influenced by the polarization-induced electric field from the excitation-dependent photoluminescence measurements. From our results, we attribute the low-temperature emission band around 3.2 eV to interband transition in the quantum well. Besides, the mechanism of the main emission band is associated with interband transition and subsequent carrier localization. The realization of good-quality non-polar GaN-based devices can then be expected in near future. 相似文献
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