Hydrogen annealing effect on DC and low-frequency noise characteristics in CMOS FinFETs

The hydrogen annealing process has been used to improve surface roughness of the Si-fin in CMOS FinFETs for the first time. Hydrogen annealing was performed after Si-fin etch and before gate oxidation. As a result, increased saturation current with a lowered threshold voltage and a decreased low-frequency noise level over the entire range of drain current have been attained. The low-frequency noise characteristics indicate that the oxide trap density is reduced by a factor of 3 due to annealing. These results suggest that hydrogen annealing is very effective for improving device performance and for attaining a high-quality surface of the etched Si-fin.     

Mathematical modelling of the oxidation of nickel titanium alloys

A one-dimensional bulk reaction model for the oxidation of nickeltitanium is formulated, with preferential oxidation of titaniumbeing included. The modelling is directed at the better understandingof the dominant mechanisms involved in the oxidation processand their significance for the biocompatibility of the alloy.Two different regimes for the relative diffusivities of oxygenand the metals are investigated. By assuming fast bulk reactions,different asymptotic structures emerge in different parameterregimes and the resulting models take the form of moving boundaryproblems. Different profiles of nickel concentration are obtained:in particular a nickel-rich layer (observed in practice) ispresent below the oxide/metal interface for the case when oxygenand the metals diffuse at comparable rates.     

Tri-Gate Bulk MOSFET Design for CMOS Scaling to the End of the Roadmap

A tri-gate bulk MOSFET design utilizing a low-aspect-ratio channel is proposed to provide an evolutionary pathway for CMOS scaling to the end of the roadmap. 3-D device simulations indicate that this design offers the advantages of a multi-gate FET (reduced variability in performance and improved scalability) together with the advantages of a conventional planar MOSFET (low substrate cost and capability for dynamic threshold-voltage control).     

Multi-emitter Si/GexSi1-x heterojunctionbipolar transistor with no base contact and enhanced logic functionality

We demonstrate multi-emitter Si/Ge_xSi_1-x n-p-n heterojunction bipolar transistors (HBT's) which require no base contact for transistor operation. The base current is supplied by the additional emitter contact under reverse bias due to the heavy doping of the emitter-base junction. Large-area HBT test structures exhibit good transistor characteristics, with current gain β≈400 regardless of whether the base current is supplied by a test base electrode or one of the emitter contacts. These devices have enhanced logic functionality because of emitter contact symmetry. Since device fabrication does not require base electrode formation, the number of processing steps can be reduced without significant penalty to HBT performance     

Wideband chirp measurement technique for high bit rate sources

A Mach Zehnder (MZ) interferometer has been used as an optical discriminator to measure the time-resolved frequency chirp of an optical source     

A Faster Deterministic Maximum Flow Algorithm

Cheriyan and Hagerup developed a randomized algorithm to compute the maximum flow in a graph with n nodes and m edges in O(mn + n² log²n) expected time. The randomization is used to efficiently play a certain combinatorial game that arises during the computation. We give a version of their algorithm where a general version of their game arises. Then we give a strategy for the game that yields a deterministic algorithm for computing the maximum flow in a directed graph with n nodes and m edges that runs in time O(mn(log_{m/n log n}n)). Our algorithm gives an O(mn) deterministic algorithm for all m/n = Ω(n^ε) for any positive constant ε, and is currently the fastest deterministic algorithm for computing maximum flow as long as m/n = ω(log n).     

Systematic Errors Associated with the CPMG Pulse Sequence and Their Effect on Motional Analysis of Biomolecules

A theoretical approach to calculate the time evolution of magnetization during a CPMG pulse sequence of arbitrary parameter settings is developed and verified by experiment. The analysis reveals that off-resonance effects can cause systematic reductions in measured peak amplitudes that commonly lie in the range 5–25%, reaching 50% in unfavorable circumstances. These errors, which are finely dependent upon frequency offset and CPMG parameter settings, are subsequently transferred into erroneousT₂values obtained by curve fitting, where they are reduced or amplified depending upon the magnitude of the relaxation time. Subsequent transfer to Lipari–Szabo model analysis can produce significant errors in derived motional parameters, with τ_einternal correlation times being affected somewhat more thanS²order parameters. A hazard of this off-resonance phenomenon is its oscillatory nature, so that strongly affected and unaffected signals can be found at various frequencies within a CPMG spectrum. Methods for the reduction of the systematic error are discussed. Relaxation studies on biomolecules, especially at high field strengths, should take account of potential off-resonance contributions.     

Compact conical antennas for wide-band coverage

A broadband antenna with a vertically polarized, omnidirectional electric field is studied. The design of the antenna and its feeding system in the wide frequency range from 20 to 1000 MHz is described and the driving-point impedance determined. Also calculated are the voltage standing-wave ratio (VSWR) and the input impedance of a transmission line connected to the antenna. More efficient operation at low frequencies is obtained by adding a length of transmission line to form a resonant section with the antenna. The effect of the different properties of the earth's surface on the field pattern is treated in a companion paper     

Very high-order microring resonator filters for WDM applications

High-order microring resonators having from 1 to 11 coupled cavities are demonstrated. These filters exhibit low loss, flat tops, and out-of-band rejection ratios that can exceed 80 dB. They achieve performance that is suitable for commercial applications.