High speed p-type SiGe modulation-doped field-effect transistors

We report on the fabrication and characterization of high-speed p-type modulation-doped field-effect transistors (MODFETs) with 0.7-μm and 1-μm gate-lengths having unity current-gain cut-off frequencies (f_T) of 9.5 GHz and 5.3 GHz, respectively. The devices were fabricated on a high hole mobility SiGe heterostructure grown by ultra-high-vacuum chemical vapor deposition (UHV-CVD). The dc maximum extrinsic transconductance (g_m) is 105 mS/mm (205 mS/mm) at room temperature (77 K) for the 0.7-μm gate length devices. The fabricated devices show good pinch-off characteristics and have a very low gate leakage current of a few μA/mm at room temperature and a few nA/mm at 77 K     

High-transconductance n-type Si/SiGe modulation-doped field-effecttransistors

The authors report on the fabrication and the resultant device characteristics of the first 0.25-μm gate-length field-effect transistor based on n-type modulation-doped Si/SiGe. Prepared using ultrahigh vacuum/chemical vapor deposition (UHV/CVD), the mobility and electron sheet charge density in the strained Si channel are 1500 (9500) cm²/V-s and 2.5×10¹² (1.5×10¹² ) cm^-2 at 300 K (77 K). At 77 K, the devices have a current and transconductance of 325 mA/mm and 600 mS/mm, respectively. These values far exceed those found in Si MESFETs and are comparable to the best results achieved in GaAs/AlGaAs modulation-doped transistors     

Stereoisomeric effects on mass spectra—I. A Review

The unimolecular reactions that give rise to mass spectra are controlled by spatial relationships and energy considerations. In molecules that contain a heteroatom, elimination reactions, involving bond-making as well as breaking, are often prominent, e.g. loss of water from alcohols. The ease of such reactions depends on spatial relationships in the molecule, and the resultant ion intensities in the spectra of geometric isomers can consequently be correlated with differences in geometry and hence furnish a basis for assigning structures. Processes that do not involve bond-making do not have such rigorous geometric requirements, but depend rather on attainment of a transition state defined in terms of a minimum energy content. Common product ions from stereoisomeric hydrocarbons seem often to arise via a common transition state. When this condition holds, the difference between the enthalpies of the isomers is reflected in the relative appearance potentials and–though the cause-and-effect relationship here is less direct and more readily obscured by other factors–relative intensities of the common product derived from the isomers. In both classes of processes, the spectra of stereoisomers can be simplified and made more distinctive by lowering source temperature and ionizing voltage.     

Organic ions in the gas phase—XXI: Synthesis and mass spectra of deuteriothiophenes

Mass-spectral and n.m.r. analysis of thiophenes labeled by exchange with deuteriosulfuric acid establishes that exchange at the 2 and 5 positions is essentially complete before any deuterium is incorporated at positions 3 and 4. Thus, such exchange is a satisfactory procedure for position-specific labeling. Mass spectra of the labeled thiophenes show that about 60% of the [CHS]⁺ ion yield is derived from molecular ions that have not undergone prior rearrangement. The remaining 40% arises by a path or paths in which the four hydrogen atoms lose position identity. Other decomposition paths contributing to the mass spectrum are characterized by more nearly complete scrambling of hydrogens.     

Cationated cyclopropanes as reaction intermediates in mass spectra: an earlier incarnation of ion-neutral complexes

The appearance a decade ago of the concept of ion-neutral complexes as intermediates in unimolecular decompositions constituted a major advance in mechanistic interpretation of mass spectra. The concept, however, was not new; it goes back to the introduction of the cationated cyclopropane in the mid-1950s. Its development did not occur via a smooth progression; rather, its history bridges a sharp discontinuity. The early workers, in a curious historical quirk, failed to generalize on the idea beyond complexes in which the neutral component is cyclopropane or a closely related species. Hence it took an independent rediscovery of the concept to usher in the rapid growth and wide application that characterize its present stage of development.     

Si/SiGe epitaxial-base transistors. I. Materials, physics, andcircuits

A detailed review of SiGe epitaxial base technology is presented, which chronicles the progression of research from materials deposition through device and integration demonstrations, culminating in the first SiGe integrated circuit application. In part I of this paper, the requirements and processes for high-quality SiGe film preparation are discussed, with emphasis on fundamental principles. A detailed overview of SiGe HBT device design and implications for circuit applications is then presented