45 GHz self-pulsation with narrow linewidth in quantum dot Fabry-Perot semiconductor lasers at 1.5 /spl mu/m

Self-pulsation at 45 GHz repetition frequency has been demonstrated in 1.5 /spl mu/m monolithic single-section quantum dot Fabry-Perot semiconductor lasers without saturable absorber. The mode-beating exhibits a narrow linewidth below 100 kHz, demonstrating high phase correlation between these modes. Such modelocked lasers open ways to low timing-jitter components for clock recovery or millimetre-wave generation in wireless transmission applications.     

Asymptotic expansion of the logistic midrange

Using the symbolic computation program MAPLE, we compute several terms of an asymptotic expansion for the distribution function of the logistic midrange.     

Exploring Little Higgs models with ATLAS at the LHC-

The European Physical Journal C - We discuss possible searches for the new particles predicted by Little Higgs Models at the LHC. By using a simulation of the ATLAS detector, we demonstrate how the...     

Knowing and Teaching Middle School Mathematics: A Professional Development Course for In‐Service Teachers

This article describes a professional development course intended to improve the content understanding of middle school mathematics teachers. The design of the course included three professional learning strategies: problem solving, examination of student thinking, and discussion of research. The concepts studied in the course included multi‐digit subtraction, multi‐digit multiplication, operations with fractions, and concepts of area and perimeter. Results from pre‐ and post‐tests administered to the nineteen participants indicate a significant increase in the mean score for each concept and document growth in the teachers' content understanding. In particular, their solutions moved from primarily procedural to more conceptual. Responses to an open‐ended survey indicate other important aspects of the professional development. Examples of teachers' work and comments are included.     

Straightforward conversion of alcohols into dibenzenesulfonimides

The reaction of various alcohols with N-fluorodibenzenesulfonimide and triphenylphosphine leads to the corresponding dibenzenesulfonylated amines in high yields.     

Extended X-ray absorption fine structure studies of thulium doped GaN epilayers

The local structure of Tm³⁺ ions incorporated into GaN epilayers was studied by means of Extended X-ray Absorption Fine Structure. The samples were doped either in situ during growth by Molecular Beam Epitaxy or by ion implantation of layers grown by Metal Organic Chemical Vapour Deposition. The implantation was done at ion energy of 300 keV and different nominal fluences of 3×10¹⁵, 4×10¹⁵ cm⁻² and 5×10¹⁵ cm⁻². The concentration of Tm in the samples studied was measured by Wavelength Dispersive X-ray analysis. For the in situ doped sample with concentration of 0.5%, and for all of the implanted samples, Tm was found on the Ga site in GaN. The ion implanted sample and an in situ doped sample with a similar concentration of Tm showed the same local structure, which suggests that the lattice site occupied by Tm does not depend on the doping method. When the average Tm concentration for in situ doped samples is increased to 1.2% and 2.0%, Tm is found to occupy the Ga substitutional site and the presence of a substantial number of Tm ions in the second coordination sphere indicates dopant clustering in the films. The formation of pure TmN clusters was found in an in situ doped sample with a dopant concentration of 3.4%.     

Growth and characterisation of Eu doped GaN thin films

We have studied the optical properties of Eu doped GaN thin films. We have grown high quality Eu doped GaN thin films by using Gas Source Molecular Beam Epitaxy (GSMBE), with 1.4% Eu concentration. The Full Width at Half Maximum (FWHM) of the X-ray diffraction in an omega scan was found to be 288 arcsecs. Low Eu concentration (0.08%) doped GaN thin films were grown, where Eu-related photoluminescence at 622 and 613 nm was detected using above band-gap excitation at 2 K. For high Eu concentration of 30% GaN:Eu crystal photoluminescence (PL) and cathodoluminescence (CL) spectra show strong and intense transitions at 622 and 664 nm, but also at 593 nm for CL spectra, with a similar transition observed from the low Eu concentration sample.     

Arsenic deactivation enhanced diffusion and the reverseshort-channel effect

The effect of enhanced diffusion caused by the electrical deactivation of arsenic on the reverse short-channel effect (RSCE) in NMOS devices is investigated. A simple four-mask process was utilized to fabricate deep sub-micron NMOS devices. Source/drain (S/D) implant and anneal conditions were varied in order to determine their implications on the RSCE. Results indicate that when high concentrations of arsenic deactivate, enhanced diffusion occurs, leading to significantly more RSCE. This implies that the dose of the arsenic implant and the subsequent anneals should be carefully considered in source/drain engineering     

Toward two-dimensional self-organization of nanostructures using wafer bonding and nanopatterned silicon surfaces

The structure of ultrathin silicon layers obtained by molecular hydrophobic bonding is investigated. The twist and tilt angles between the two crystals are accurately controlled. The buried Si|Si interface is observed by transmission electron microscopy and by grazing incidence X-ray techniques. For low twist angle values (/spl psi/<5/spl deg/) plane view observations reveal well-defined dislocation networks. Cross-section observations give evidence that the dislocation networks are localized at the bonding interfacial plane with no threading dislocation. Grazing incidence small angle X-ray scattering measurements confirm the good quality of the bonding interface as well as the quality of the dislocation networks. Grazing incidence X-ray diffraction is also used and shows the long-range order of the periodic strain field in the silicon layer. It shows, especially, the interaction between the dislocations. X-ray reflectivity was employed and estimated that the interfacial thickness (i.e., thickness of the bonding) lower than 1 nm decreases when the twist angle increases. The nanopatterned surface is then investigated by scanning tunneling microscopy and X-ray methods. To validate these substrates for long-range order self-organization, the growth of Si and Ge quantum dots is finally achieved.