In this paper, the context of modeling of the impact of mismatch and statistical variations on analogue circuit building blocks is emphasized. The aim is to develop a new algorithm which predicts the statistical behavior of important parameters of an amplifier including output resistance, voltage gain and trans-conductance. The relative error of standard deviation of statistical parameters will remain less than 5% compared with the most accurate Monte-Carlo (MC) simulations using atomistic library model-cards. In comparison with other models which are based on the normal distribution of parameters, the proposed model does not need this limiting presumption. On the other hand, the proposed algorithm is more efficient compared with time consuming MC atomistic simulations. 相似文献
The single electron transistor (SET) is a nanoscale switching device with a simple equivalent circuit. It can work very fast as it is based on the tunneling of single electrons. Its nanostructure contains a quantum dot island whose material impacts on the device operation. Carbon allotropes such as fullerene (C60), carbon nanotubes (CNTs) and graphene nanoscrolls (GNSs) can be utilized as the quantum dot island in SETs. In this study, multiple quantum dot islands such as GNS-CNT and GNS-C60 are utilized in SET devices. The currents of two counterpart devices are modeled and analyzed. The impacts of important parameters such as temperature and applied gate voltage on the current of two SETs are investigated using proposed mathematical models. Moreover, the impacts of CNT length, fullerene diameter, GNS length, and GNS spiral length and number of turns on the SET’s current are explored. Additionally, the Coulomb blockade ranges (CB) of the two SETs are compared. The results reveal that the GNS-CNT SET has a lower Coulomb blockade range and a higher current than the GNS-C60 SET. Their charge stability diagrams indicate that the GNS-CNT SET has smaller Coulomb diamond areas, zero-current regions, and zero-conductance regions than the GNS-C60 SET. 相似文献
In high‐throughput research, it is essential to use “right data” and “meaningful parameters” to reach reliable conclusions. The complexity and the large amount of data obtained from each set of experiments make the analysis of reaction data a nontrivial task. The important role of reaction kinetic modeling in the analysis of polymerization reaction data is discussed, and it is shown that the application of traditional methods for the determination of catalyst productivity can be misleading. Reaction kinetic modeling provides meaningful parameters for data analysis, gives complete information about the polymerization kinetic profile, and makes it possible to evaluate assumptions and hypotheses.
Light induced cis/trans isomerization in the family of merocyanine (MC) dyes offers a recyclable proton pumping ability which can potentially be used in hybrid bio‐electronic devices. In this article, a hexadecyl MC dye is embedded in lipid molecules to make a macromolecular configuration of a lipid/hexadecyl MC membrane. Lipid molecules play a critical role in stabilizing the dye in a membrane structure for practical use in energy devices. In this study, we first examined the proton pumping characteristic of the lipid/hexadecyl MC membrane in a conventional photoelectrochemical cell. Next, a major modification in the cell was introduced by eliminating I2/I‐electrolyte which resulted in a two‐fold increase in the open circuit voltage compared with that of the conventional cell. In addition, the charging time in the new cell was reduced approximately four orders of magnitude. This research demonstrated that the newly designed lipid‐ MC cell can act as a promising bioelectronic device based on the green energy of photoinduced MC dye proton pumping. 相似文献
Thermoelectric (TE) materials based on alloys of magnesium (Mg) and silicon (Si) possess favorable properties such as high electrical conductivity and low thermal conductivity. Additionally, their abundance in nature and lack of toxicity make them even more attractive. To better understand the electronic transport and thermal characteristics of bulk magnesium silicide (Mg2Si), we solve the multiband Boltzmann transport equation within the relaxation-time approximation to calculate the TE properties of n-type and p-type Mg2Si. The dominant scattering mechanisms due to acoustic phonons and ionized impurities were accounted for in the calculations. The Debye model was used to calculate the lattice thermal conductivity. A unique set of semiempirical material parameters was obtained for both n-type and p-type materials through simulation testing. The model was optimized to fit different sets of experimental data from recently reported literature. The model shows consistent agreement with experimental characteristics for both n-type and p-type Mg2Si versus temperature and doping concentration. A systematic study of the effect of dopant concentration on the electrical and thermal conductivity of Mg2Si was also performed. The model predicts a maximum dimensionless figure of merit of about 0.8 when the doping concentration is increased to approximately 1020?cm?C3 for both n-type and p-type devices. 相似文献