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1.
Y.K. Chen M.C. Wu W.S. Hobson S.J. Pearton A.M. Sergent M.A. Chin 《Photonics Technology Letters, IEEE》1991,3(5):406-408
High-power lattice-strained AlGaAs/InGaAs graded index separate-confinement heterostructure (GRINSCH) quantum-well lasers emitting at a 980-nm wavelength have been grown by organometallic vapor phase epitaxy (OMVPE) and fabricated with a self-aligned ridge-waveguide structure. Using a 3- mu m-wide and 750- mu m-long AR-HR coated laser, 30 mV of optical power was coupled into optical fibers with 28.6% efficiency. A dominating single-lobe far-field radiation pattern was obtained from a wedge-shaped ridge-waveguide laser for output power as high as 240 mW with a maximum output power of 310 mW.<> 相似文献
2.
Morton P.A. Ackerman D.A. Shtengel G.E. Kazarinov R.F. Hybertsen M.S. Tanbun-Ek T. Logan R.A. Sergent A.M. 《Photonics Technology Letters, IEEE》1995,7(8):833-835
We describe the important characteristics of high-speed p-doped compressively strained MQW lasers obtained from comprehensive below-threshold DC measurements. Results of gain and differential gain versus wavelength and carrier density are verified by above-threshold resonance measurements. Measurement-derived design curves of gain, differential gain, and linewidth enhancement factor allow device optimization for high speed and low chirp 相似文献
3.
Chen Y.K. Wu M.C. Hong M.H. Mannaerts J. Chin M.A. Sergent A.M. 《Electron Devices, IEEE Transactions on》1991,38(12):2692-2693
Summary form only given. An edge-emitting strained AlGaAs/InGaAs/GaAs quantum-well laser structure is reported. It has a periodic index separate confinement heterostructure (PINSCH) optical confinement layers for a small beam divergence and high output power. Preliminary measurements of AR/HR-coated self-aligned ridge waveguide lasers show a CW output power of up to 350 mW and a 20° transverse beam divergence at a 980-nm lasing wavelength. This low beam divergence results in a high coupling efficiency of 51% into single-mode fibers. The expanded optical field in PINSCH confinement layers significantly pinches the transverse beam divergence and increases the maximum output power 相似文献
4.
The thiochlorides Mo6Cl10Y (Y = S, Se, Te) have been prepared; they are isostructural with Nb6I11, space group Pccn, and have four formula units per unit cell. The X-ray structure of Mo6Cl10Se has been determined from three-dimensional single-crystal counter data and refined to a final R value of 0.053 for 3350 independent reflections. The most important result concerning this structure is a statistical distribution of the Se atom on the unit (Mo6X′8) with : so the compound Mo6Cl10Se must be formulated . The diamagnetic and dielectric behavior of these new thiochlorides is discussed. 相似文献
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The synthesis and the crystal properties of new selenides of formula MxMo3Se4 are described. If M = Zn, Ag, Cd, Sn and Pb, they are stoichiometric with x = 0.6; if M = Fe, Mn, Cr, V, Ti, triclinic solid solutions are observed with 0.5 < x < 0.7; if M = Cu, Co, Ni, rhombohedral solid solutions are obtained with 0 < x < 1.4 for M = Cu, 0 < x < 0.7 for M = Co and 0 < x < 0.8 for M = Ni All these phases can be deduced from the Mo3Se4 structure by introducing metal atoms into the tunnels between the “Mo6Se8” metal atom cluster configuration. 相似文献
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Two new series of Nb6 bromides, CsRENb6Br18 (RE = all the lanthanides excepted Eu and Yb, + Y) (type H ) and M2RENb6Br18 (M = Cs, Rb, Tl; RE = Eu, Yb) (type R ) have been isolated. The crystal structures of CsErNb6Br18 and Cs2EuNb6Br18, isotypic with the corresponding chlorides, have been determined by single crystal X-ray diffraction data. The (Nb6Br18) intra-unit strength is related to the nature and the charge of the counter cation. A comparison between the corresponding chlorides and bromides series, based on the chemical properties and the size of the halogen is discussed. 相似文献
10.
Manfra MJ Hwang EH Das Sarma S Pfeiffer LN West KW Sergent AM 《Physical review letters》2007,99(23):236402
We present a study of the temperature and density dependence of the resistivity of an extremely high quality two-dimensional hole system grown on the (100) surface of GaAs. For high densities in the metallic regime (p > or approximately4x10;{9} cm;{-2}), the nonmonotonic temperature dependence ( approximately 50-300 mK) of the resistivity is consistent with temperature dependent screening of residual impurities. At a fixed temperature of T=50 mK, the conductivity versus density data indicate an inhomogeneity driven percolation-type transition to an insulating state at a critical density of 3.8x10;{9} cm;{-2}. 相似文献