高性能HBLED的测试

高亮度LED(HBLED)相比传统的LED具有高得多的性能,但是同时具有更高的成本。这两个因素决定了HBLED在研发和生产阶段的测试方式。测试需求高亮度发光二极管(HBLED)凭借其高效率、长寿命和色彩丰富     

The effect of HF processing on gate oxide degradation in aggressivepoly buffered LOCOS isolation

We have investigated gate oxide degradation in metal-oxide semiconductor (MOS) devices associated with aggressive Poly Buffered Locos (PBL) isolation. Defects in the gate oxide resulting in severe degradation of charge-to-breakdown (Q_bd) occurring at the interface between field oxide and active silicon have been shown to be a result of local Si surface roughness. Capacitor I-V data was used to quantify the Si roughness. It is shown that NH₄F-H₂O-HF (BOE) etchback chemistry provides significant improvement in gate oxide Q_bd for capacitors fabricated using PBL isolation. This Q_bd improvement is correlated to a decrease in Si roughness at the active silicon edge     

高性能HBLED的测试

高亮度LED (HBLED)相比传统的LED具有高得多的性能,但是同时具有更高的成本。这两个因素决定了HBLED在研发和生产阶段的测试方式。测试需求高亮度发光二极管(HBLED)凭借其高效率、长寿命和色彩丰富等特性正快速发展。这些特性使得