Fully asynchronous stochastic coordinate descent: a tight lower bound on the parallelism achieving linear speedup

Mathematical Programming - We seek tight bounds on the viable parallelism in asynchronous implementations of coordinate descent that achieves linear speedup. We focus on asynchronous coordinate...     

Supply-side hurdles in Internet B2C e-commerce: an empirical investigation

Given Hong Kong's special circumstances of small physical size, advanced infrastructure, and low shopping cost, a survey is designed under which supply-side problems in Internet business-to-consumer (B2C) e-commerce are indirectly revealed by responses on the demand side. Difficulties arising from the reluctance to answer questionnaires on the part of e-firms wary about trade and innovation secrets and their small number at the outset are thereby overcome. Survey data on demand-side obstacle factors in the form of perceived low e-shopping comparability, e-shopping inconvenience, e-transaction insecurity, and poor Internet privacy, together with orientation toward social interaction and low awareness on the part of consumers, translate into information on notionally matching supply-side hurdles. Regression analysis and hypothesis testing indicate statistical significance for the above hurdle factors in terms of impact on individual unwillingness to shop online. These results add to the inductive basis for future research into a general demand-supply theory of Internet B2C e-commerce and offer an empirically-grounded position against which the effects of later supply-side changes can be evaluated. Useful information also follows for engineer-managers seeking to compare marginal improvements in supply-side problems, particularly in the form of estimated substitution ratios.     

A 1-V 10.7-MHz switched-opamp bandpass /spl Sigma//spl Delta/ modulator using double-sampling finite-gain-compensation technique

A 1 V switched-capacitor (SC) bandpass sigma-delta (/spl Sigma//spl Delta/) modulator is realized using a high-speed switched-opamp (SO) technique with a sampling frequency of up to 50 MHz, which is improved ten times more than prior 1 V SO designs and comparable to the performance of the state-of-the-art SC circuits that operate at much higher supply voltages. On the system level, a fast-settling double-sampling SC biquadratic filter architecture is proposed to achieve high-speed operation. A low-voltage double-sampling finite-gain-compensation technique is employed to realize a high-resolution /spl Sigma//spl Delta/ modulator using only low-DC-gain opamps to maximize the speed and to reduce power dissipation. On the circuit level, a fast-switching methodology is proposed for the design of the switchable opamps to achieve a switching frequency up to 50 MHz. Implemented in a 0.35-/spl mu/m CMOS process (V/sub TP/=0.82 V and V/sub TN/=0.65 V) and at 1 V supply, the modulator achieves a measured peak signal-to-noise-and-distortion ratio (SNDR) of 42.3 dB at 10.7 MHz with a signal bandwidth of 200 kHz, while dissipating 12 mW and occupying a chip area of 1.3 mm/sup 2/.     

A high-linearity 100-element diode grid mixer

Grid-mixer arrays can achieve high linearity and dynamic range through quasi-optical power combining. We present a 100-element single-ended diode grid mixer operating at 2.45 GHz. Each element incorporates two diodes in series. We measure an input third-order intercept of 11 W (40.5 dBm), and output third-order intercept of 3.4 W (35.4 dBm), and an associated conversion loss of 5.1 dB. The power-handling capability of the array is 100 times larger than that of a microstrip mixer using a single element. The local oscillator (LO) drive requirement for the entire array is 1.4 W (31.6 dBm). The angular dependence of the array's IF power is also presented and is in agreement with theory     

Modeling electromigration lifetime under bidirectional currentstress

Electromigration reliability of interconnect under bidirectional current stress has been studied in a wide frequency range (mHz to 200 MHz). Experimental results show that the AC lifetime rises with the stress current frequency. The current density exponent and the activation energy of AC lifetime are found to be twice that of DC lifetime. Pure AC current stress failure at extremely high current density is believed to result from thermal migration of metal at hot/cold transition points     

Preliminary studies on a variable energy positron annihilation lifetime spectroscopy system

There are many advantages in being able to perform positron annihilation lifetime spectroscopy (PALS) using a variable energy positron beam, the most obvious being the easy identification of different defect types at different depths. The difficulty in conducting variable energy (VE) PALS studies lies in the fact that a “start” signal is required to signal the entry of the positron into the target. Two methods have been used to overcome this problem, namely the bunching technique, which employs radio frequency (RF) cavities and choppers, and secondly the use of secondary electrons emitted from the target. The latter technique is in terms of experimental complexity much simpler, but has in the past suffered from poor time resolution (typically ∼500 ps). In this work, we present a series of computer simulations of a design based on the secondary electron emission from thin C-foils in transmission mode which shows that significant improvements in time resolution can be made with resolutions ∼200 ps being in principle possible.     

Probabilistic Analysis of Condition Numbers for Linear Programming

In this paper, we provide bounds for the expected value of the log of the condition number C(A) of a linear feasibility problem given by a n × m matrix A (Ref. 1). We show that this expected value is O(min{n, m log n}) if n > m and is O(log n) otherwise. A similar bound applies for the log of the condition number C _R(A) introduced by Renegar (Ref. 2).     

Plasma immersion ion implantation for SOI synthesis: SIMOX and ion-cut

We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII) for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high cost of SOI substrates due to the simpler implanter design as well as ease of maintenance. For separation by plasma implantation of oxygen wafers, secondary ion mass spectrometry analysis and cross-sectional transmission electron micrographs show continuous buried oxide formation under a single-crystal silicon overlayer with sharp Si/SiO₂ interfaces after oxygen plasma implantation and high-temperature (1300°C) annealing. Ion-cut SOI wafer fabrication technique is implemented for the first time using PIII. The hydrogen plasma can be optimized so that only one ion species is dominant in concentration and there are minimal effects by other residual ions on the ion-cut process. The physical mechanism of hydrogen induced silicon surface layer cleavage has been investigated. An ideal gas law model of the microcavity internal pressure combined with a two-dimensional finite element fracture mechanics model is used to approximate the fracture driving force which is sufficient to overcome the silicon fracture resistance.     

Fixed-sign solutions for a system of singular focal boundary value problems

We consider a system of focal boundary value problems where the nonlinearities may be singular in the independent variable and may also be singular in the dependent arguments. Using Schauder fixed point theorem, we establish criteria such that the system of boundary value problems has at least one fixed-sign solution.     

Some new nonlinear inequalities and applications to boundary value problems

In this paper, we establish some new nonlinear integral inequalities of the Gronwall–Bellman–Ou-Iang-type in two variables. These on the one hand generalizes and on the other hand furnish a handy tool for the study of qualitative as well as quantitative properties of solutions of differential equations. We illustrate this by applying our new results to certain boundary value problem.