基于形态特征提取的急性下壁心肌梗死BiLSTM网络辅助诊断算法

急性下壁心肌梗死是一种病发急、进展快、致死率高的心脏疾病,该文提出一种新颖的基于形态特征提取的BiLSTM神经网络分类的急性下壁心肌梗死辅助诊断算法,可大幅度提高医生对急性下壁心肌梗死疾病的诊断效率并有助于及时确诊.算法包括:对胸痛中心数据库心拍信号进行降噪及心拍分割;根据临床心内科医学诊断指南提取了12导联波形距离特征和分导联波形幅值特征;依据提取的特征搭建LSTM与BiLSTM神经网络进行心拍的分类识别;使用PTB公开数据库和胸痛中心数据库多临床中心进行交叉验证.实验结果表明,加入胸痛中心真实临床数据后,基于形态特征提取BiLSTM神经网络的急性下壁心肌梗死辅助诊断算法准确率达到99.72％,精度达到99.53％,灵敏度达到100.00％,同时F1-Score达到99.76.该算法比其他现有算法准确率提高至少1％,该项研究具有非常重要的临床应用价值.     

“电工学”国家级一流课程建设与实践

根据新时代新工科人才需求特点和电工学课程特点,分析非电专业学生的电类实践需求,提出构建电工学课程为核心的电工电子实践创新能力培养新体系。通过优化教学内容、开展教学模式和考核模式改革、构建教学资源体系和进行教师队伍建设,使我校电工学课程教学质量提升、学生工程实践和创新能力提高、学生满意度增加、一流课程建设成效显著。     

主存高效的公交网络路径规划索引

在公交时间表下给定起始和目标站点,路径规划查询返回一组到达时间早和换乘次数少的帕雷托最优路径.现有的索引方法需要大量运行时内存.本文提出主存空间高效的索引方法(a-)PAINT.(a-)PAINT对每个站点v预计算一组标签,使得对于从站点s到站点d的查询可以通过匹配s和d相关的标签高效地生成查询结果的一条路径.PAINT对任意查询返回最优路径.a-PAINT只需要很小的预处理开销,但可能返回多一趟换乘的次优路径.用真实的公交时间表与模拟查询测试,PAINT具有合理的预处理开销.a-PAINT需要更少量的预处理开销,在大规模公交网络下准确率达90％.     

OBE-CDIO理念下“集成电路版图分析与设计”课程教学改革与探索

针对目前集成电路版图分析与设计课程存在教学方法老化、教学模式形式化等问题,本文以OBE-CDIO教育理念为指导,对”集成电路版图分析与设计”课程的课程教学模式、课程设计、项目式教学方式和课程考核方式等方面的改革进行有益的探索与实践。将工程教学认证中对学生的专业毕业要求作为制定教学目标的依据,将BB网络平台、ISO9001等现代化教学资源和质量标准融入课堂教学,采用OBE-CDIO能力教学理念指导课程设计,实现教学环节与考核环节的科学化与多元化,通过引入课程思政激发学生学习热情,树立社会主义核心价值观,全面地培养学生的综合版图分析与设计能力和素养。     

应变纤锌矿ZnO/MgxZn1-xO量子点中离子施主束缚激子的光学性质

Within the framework of the effective-mass approximation and the dipole approximation, considering the three-dimensional confinement of the electron and hole and the strong built-in electric field(BEF) in strained wurtzite Zn O/Mg0:25Zn0:75O quantum dots(QDs), the optical properties of ionized donor-bound excitons(D+, X)are investigated theoretically using a variational method. The computations are performed in the case of finite band offset. Numerical results indicate that the optical properties of(D+, X) complexes sensitively depend on the donor position, the QD size and the BEF. The binding energy of(D+, X) complexes is larger when the donor is located in the vicinity of the left interface of the QDs, and it decreases with increasing QD size. The oscillator strength reduces with an increase in the dot height and increases with an increase in the dot radius. Furthermore, when the QD size decreases, the absorption peak intensity shows a marked increment, and the absorption coefficient peak has a blueshift. The strong BEF causes a redshift of the absorption coefficient peak and causes the absorption peak intensity to decrease remarkably. The physical reasons for these relationships have been analyzed in depth.     

零维到三维结构中三核铜自旋阻挫簇单元的磁构关系和反对称交换

量子自旋液体是最近几年刚被人们证实除铁磁体、反铁磁体之外的第三种磁性类型,因其有望解释高温超导的运行机制、改变计算机硬盘信息存储方式而在物理、材料等领域备受关注。自旋阻挫作为量子自旋液体的最小单元可能是解开量子自旋液体诸多问题的钥匙,所以在磁学、电学研究领域再一次成为人们研究的热点。基于文献报道的三核铜配合物[Cu3(μ3-OH)(μ-OPz)3(NO3)2(H2O)2]·CH3OH(1),我们合成了三维金属有机框架配合物{[Ag(HOPz)Cu3(μ3-OH)(NO3)3(OPz)2Ag(NO3)]·6H2O}n(2)(HOPz=甲基(2-吡嗪基)酮肟),并从自旋阻挫的角度对二者磁性质进行对比和详细分析。磁化率数据表明自旋间有很强的反铁磁相互作用和反对称交换。通过包含各向同性和反对称交换的哈密顿算符对两者磁学数据进行拟合并研究其磁构关系,所获最佳拟合参数为:配合物1:Jav=-426 cm^-1,g⊥=1.83,g∥=2.00;配合物2:Jav=-401 cm^-1,g⊥=1.85,g∥=2.00。     

THE effect of Srandom DOPANT fluctuation on threshold voltage and drain current variation in junctionless nanotransistors

We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation (10000 randomizations). With this simulation, we could study the effects of varying the dimensions (length and width), and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region (off) and overthreshold (on). It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion (compared with that of the subthreshold). These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel.     

透明塑料盒上的显色偏振

依据显色偏振、布鲁斯特角等原理详细解释了透明塑料盒上彩色条纹的形成过程,并进行实验验证,排除了薄膜干涉、色散、散射等其他理论解释.