Tunable Nd,La:SrF_2 laser and passively Q-switched operation based on gold nanobipyramids saturable absorber

A novel Nd, La:SrF_2 disordered crystal is prepared, and its continuous-wave wavelength tuning operation is performed for the first time. Employing a surface plasmon resonance(SPR) based gold nanobipyramids(G-NBPs) saturable absorber,we obtain a compact diode-pumped passively Q-switched Nd, La:SrF_2 laser. The stable Q-switched pulse operates with the shortest pulse duration of 1.15 μs and the maximum repetition rate of 41 k Hz. The corresponding single pulse energy is 2.24 μJ. The results indicate that G-NBPs could be a promising saturable absorber applied to the diode-pumped solid state lasers(DPSSLs).     

氧化物掺杂ZnO-Ba_(0.8)Sr_(0.2)TiO_3复合陶瓷的制备及电性能研究

采用固相法制备了氧化物掺杂ZnO-Ba0.8Sr0.2TiO3复合陶瓷,并利用X射线衍射仪和扫描电子显微镜对其晶相及微观形貌进行了观测;另外,研究了氧化物掺杂对陶瓷介电性能及压敏性能的影响。结果表明,当掺杂摩尔分数为0.50%的Bi2O3和0.50%的Sb2O3时,陶瓷在室温下的εr为36402,tanδ为0.065;在此基础上继续掺入0.25%的MnO和0.35%的Cr2O3,陶瓷的非线性系数α为5.4,漏电流IL为1.5×10–6A/mm2,压敏电压为3.0V。Bi2O3、Sb2O3、MnO和Cr2O3掺杂使ZnO-Ba0.8Sr0.2TiO3复合陶瓷的介电性能和压敏性能同时得到了有效提高。     

Highly efficient CW laser operation in 4 at. % Tm~(3+) and 4 at. % Y~(3+) codoped CaF_2 crystals

Tm:CaF_2 and Tm;Y:CaF_2 single crystals were prepared by the temperature gradient technique. The spectral properties of Tm;Y:CaF_2 single crystals were investigated and compared with those of Tm:CaF_2. It was demonstrated that codoping with Y~(3+) ions could efficiently improve the spectroscopic properties. Tm;Y:CaF_2 crystals have larger absorption cross-sections at the pumping wavelength, larger mid-infrared stimulated emission cross-sections, and much longer fluorescence lifetimes of the upper laser level(Tm~(3+):~3H_4 level) than Tm:CaF_2 crystals. Continuous-wave(CW) lasers around 1.97 μm were demonstrated in 4.0 at. % Tm,4.0 at. % Y:CaF_2 single crystals under 792 nm laser diode(LD) pumping. The best laser performance has been demonstrated with a low threshold of 0.368 W, a high slope efficiency of 54.8%, and a maximum output power of 1.013 W.     

稀土掺杂萤石结构卤化物晶体团簇结构研究

稀土掺杂萤石卤化物在国民经济、国防建设等领域发挥着不可替代的作用。萤石卤化物特殊的晶体结构导致稀土离子团聚,目前针对稀土离子团聚的系统研究还比较少。本文以稀土掺杂萤石卤化物为研究对象,采用第一性原理计算系统研究了从稀土离子单体到高阶团簇的结构特征、演变规律、联系及其影响因素。研究发现,稀土离子单体中心1|0|0|1₁(C_4v)和1|0|0|1₂(C_3v)稳定性随离子半径变化而改变,且不同晶体的变化趋势不同,与晶格畸变分析结果一致。晶格畸变与库仑作用相互耦合决定了电荷补偿间隙卤离子的占位倾向性,即C_4v和C_3v中心的相对稳定性。此外,共价效应使得PbF₂和SrCl₂晶体单体中心结构及其稳定性与CaF₂、SrF₂和BaF₂不同。研究还揭示了晶体离子性和晶胞尺寸对单体中心能量差斜率的影响。文中还研究了稀土离子高阶团簇的结构,其稳定性演变规律与单体中心相对...     

氧化物掺杂ZnO-BST复合陶瓷的复阻抗分析

采用复阻抗分析方法研究了Sb2O3、MnO及Cr2O3掺杂对复合陶瓷ZnO-0.17Ba0.8Sr0.2TiO3(ZnO-0.17BST)晶粒相、晶界相电阻的影响,采用XRD、SEM测量了试样的晶相、微观形貌。结果表明:掺杂并没有改变复合陶瓷的相组成,Sb2O3掺杂,Sb2O3-MnO共掺杂和Sb2O3-MnO-Cr2O3共掺杂的三组试样,其晶粒相电阻随掺杂试剂种类的增多依次减小,晶界相电阻先减小后增加。掺杂氧化物不同,其晶粒、晶界相电阻对复合体系电阻的贡献不同。考虑到晶界相的含量,在掺杂ZnO-0.17BST复合陶瓷电导中,晶粒相起主导作用。     

Ho3+掺杂Sc2SiO5激光晶体生长与光谱性能研究

采用提拉法分别生长了具有高光学质量的0.5at;和1.0at;的Ho∶ Sc2SiO5(Ho∶ SSO)激光晶体.研究表明晶体空间群为C2/c,晶胞参数为a=0.99723 nm,b=0.64261 nm,c=1.16843 nm,β=103.9°.Ho3+在SSO基质中的分凝系数为0.82.Ho∶ SSO晶体在2085nm处发射截面为1.12×10-20 cm2,发射光谱呈现一个1850～2150nm的宽发射带.当粒子数反转比率β=0.25时,增益截面σg即开始出现正增益.综合评估了晶体的激光性能,表明Ho∶SSO晶体是一种有潜力的2μm波段激光介质.     

Gd3+/Y3+共掺对Nd:CaF2晶体光谱性能的影响

通过坩埚下降法生长了系列共掺Nd,Gd:CaF₂和Nd,Y:CaF₂晶体, 研究了Gd³⁺/Y³⁺共掺对Nd³⁺光谱性能以及Nd:CaF₂晶体晶胞参数的影响规律. 对于0.5 at.%Nd, x at.%Gd(x=2,5,8,10):CaF₂系列晶体, 当调控Gd³⁺掺杂浓度为2 at.%时, 具有最大的荧光寿命499 μs; 当Gd³⁺掺杂浓度为5 at.%时, 具有最大的吸收截面1.47×10^-20 cm², 最大的发射截面1.9×10^-20 cm²; 当Gd³⁺掺杂浓度为8 at.%时, 具有最佳的发射带宽29.03 nm. 对于0.6 at.%Nd, xat.%Y(x=2, 5, 8, 10):CaF₂系列晶体, Y³⁺掺杂浓度为5 at.%时, 有最大的吸收截面2.41×10^-20 cm², 最大的发射截面3.17×10^-20 cm²; 当Y³⁺掺杂浓度为10 at.%时, 具有最长的荧光寿命359.4 μs,并且具有最大发射带宽26 nm.