退火工艺对YIG多晶薄膜铁磁共振线宽的影响

主要研究了退火工艺对钇铁石榴石(YIG)薄膜铁磁共振线宽的影响。实验中微米级的YIG薄膜通过磁控溅射法在Gd_3Ga_5O_(12)(GGG)(111)衬底上制备,并通过750~950℃常压常规退火及750~850℃真空快速退火两种方式对薄膜进行退火晶化处理。最终系统地研究了薄膜的微观晶体结构、磁性能和铁磁共振线宽性能。研究发现,经过800℃,10 min的真空快速热处理的YIG薄膜磁性能优异,其铁磁共振线宽为2 626.1 A/m@9.3GHz,阻尼系数α=2.077×10~(-3),薄膜表面粗糙度为1.9nm。     

Liquid phase epitaxy magnetic garnet films and their applications

Liquid phase epitaxy(LPE) is a mature technology. Early experiments on single magnetic crystal films fabricated by LPE were focused mainly on thick films for microwave and magneto–optical devices. The LPE is an excellent way to make a thick film, low damping magnetic garnet film and high-quality magneto–optical material. Today, the principal challenge in the applied material is to create sub-micrometer devices by using modern photolithography technique. Until now the magnetic garnet films fabricated by LPE still show the best quality even on a nanoscale(about 100 nm), which was considered to be impossible for LPE method.     

退火工艺对YIG多晶薄膜铁磁共振线宽的影响

主要研究了退火工艺对钇铁石榴石(YIG)薄膜铁磁共振线宽的影响。实验中微米级的YIG薄膜通过磁控溅射法在Gd3Ga5O12(GGG)(111)衬底上制备,并通过750~950 ℃常压常规退火及750~850 ℃真空快速退火两种方式对薄膜进行退火晶化处理。最终系统地研究了薄膜的微观晶体结构、磁性能和铁磁共振线宽性能。研究发现,经过800 ℃,10 min的真空快速热处理的YIG薄膜磁性能优异,其铁磁共振线宽为2 626.1 A/m@9.3 GHz,阻尼系数α=2.077×10-3,薄膜表面粗糙度为1.9 nm。