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The retention characteristics of electrons and holes in hafnium oxide with post-deposition annealing in a N2 or 02 ambient were investigated by Kelvin probe force microscopy. The KFM results show that compared with the N2 PDA process, the O2 PDA process can lead to a significant retention improvement. Vertical charge leakage and lateral charge spreading both played an important role in the charge loss mechanisms. The retention improvement is attributed to the deeper trap energy. For electrons, the trap energy of the HOS structure annealed in a N2 or 02 ambient were determined to be about 0.44 and 0.49 eV, respectively. For holes, these are about 0.34 and 0.36 eV, respectively. Finally, the electrical characteristics of the memory devices are demonstrated from the experiment, which agreed with our characterization results. The qualitative and quantitative determination of the charge retention properties, the possible charge decay mechanism and trap energy reported in this work can be very useful for the characterization of hafnium charge storage devices. 相似文献
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本文中, 使用开尔文探针显微镜,研究了不同退火气氛(氧气或氮气)情况下氧化铪材料的电子和空穴的电荷保持特性。与氮气退火器件相比,氧气退火可以使保持性能变好。横向扩散和纵向泄露在电荷泄露机制中都起了重要的作用。 并且,保持性能的改善与陷阱能级深度有关。氮气和氧气退火情况下,氧化铪存储结构的的电子分别为0.44 eV, 0.49 eV,空穴能级分别为0.34 eV, 0.36 eV。 最后得到,不同退火气氛存储器件的电学性能也与KFM结果一致。对于氧化铪作为存储层的存储器件而言,对存储特性的定性和定量分析,陷阱能级,还有泄漏机制研究是十分有意义的。 相似文献
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In this paper, we investigate an Al2O3/HfSiO stack as the blocking layer of a metal-oxide-nitride-oxide-silicon-type (MONOS) memory capacitor. Compared with a memory capacitor with a single HfSiO layer as the blocking layer or an Al2O3/HfO2 stack as the blocking layer, the sample with the Al2O3/HfSiO stack as the blocking layer shows high program/erase (P/E) speed and good data retention characteristics. These improved performances can be explained by energy band engineering. The experimental results demonstrate that the memory device with an Al2O3/HfSiO stack as the blocking layer has great potential for further high-performance nonvolatile memory applications. 相似文献
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介绍了FLASH缺陷机理并提出了面向8bit和16bit的FLASH-March算法,在此基础上设计并实现一种新的FLASH缺陷检测系统.该系统以FPGA为硬件基础,以Microblaze软核为CPU搭建系统主体架构,实现了对FLASH缺陷的检测.相比于传统方法,本系统有实现简单,成本低,便于相关算法研究的特点.本设计最终在实际中得到应用,验证了设计的有效性和可靠性. 相似文献
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The resistivity,crystalline structure and effective work function(EWF) of reactive sputtered TaN has been investigated.As-deposited TaN films have an fcc structure.After post-metal annealing(PMA) at 900℃,the TaN films deposited with a N2 flow rate greater than 6.5 sccm keep their fee structure,while the films deposited with a N2 flow rate lower than 6.25 seem exhibit a microstructure change.The flatband voltages of gate stacks with TaN films as gate electrodes on SiO2 and HfO2 are also measured.It is concluded that a dipole is formed at the dielectric-TaN interface and its contribution to the EWF of TaN changes with the Ta/N ratio in TaN,the underneath dielectric layer and the PMA conditions. 相似文献
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为减小共源线噪声对NAND闪存读可靠性的影响,设计了一种可实现C/F(Coarse/Fine)读取操作的页缓存器电路,并设计实现了适用于此电路的C/F读取算法,显著减小了共源线噪声.该算法通过两次子读感应读取存储单元,在第一次子读感应中分辨出阈值电压较低的存储单元并标记在页缓存器中,使其不再进行第二次子读感应,从而减小共源线噪声引起的阈值偏移.电路仿真计算表明,该支持C/F读取算法的页缓存器结构能够减小阈值偏移至少495.6mV,有效提高了NAND闪存读操作的精确性. 相似文献
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为改善数据保持干扰和编程干扰对NAND闪存可靠性的影响,提出了一种新的奇偶位线块编程补偿算法。该算法利用编程干扰效应来补偿由数据保持引起的阈值漂移,修复NAND闪存因数据保持产生的误码,提高了NAND闪存的可靠性。将该算法应用于编程擦除次数为3k次的1x-nm MLC NAND闪存。实验结果表明,在数据保持时间为1年的条件下,与传统奇偶交叉编程算法相比,采用该补偿算法的NAND闪存的误码降低了93%;与读串扰恢复算法相比,采用该补偿算法的NAND闪存的误码下降了38%。 相似文献
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将空气隙应用于逻辑器件后段金属互连线中可以有效降低互连线间的寄生电容,提升电路信号传输速度,但制备过程仍具有一定的困难。基于三维闪存(3D NAND)中后段(BEOL)W的自对准双重图形化(SADP)工艺,利用湿法刻蚀的方法在W化学机械平坦化(CMP)之后去除SiO_2介质层,然后再利用化学气相淀积(CVD)法淀积一层台阶覆盖率较低的介质在金属互连线层内形成空气隙。采用空气隙结构代替原来的SiO_2介质层可降低约37.4%的寄生电容,且薄膜的台阶覆盖率会进一步降低电容。TCAD仿真和电性能测试结果表明,采用该方法制备的空气隙结构可降低互连延迟。 相似文献