r面蓝宝石衬底上生长的a面ZnO巨大的平面内光学各向异性

我们在室温下测量采用反射差分光谱测量了r面蓝宝石衬底上生长的a面氧化锌的平面内光学各向异性。由于a面氧化锌为C2v对称性,我们观察到在平行c轴的方向和垂直于c轴的方向存在巨大的平面内光学各向异性。在带隙处观察到了非常尖锐的跃迁振荡信号,这个信号来源于偏振相关的能带移动。激子跃迁产生了尖锐的线形。谱线的拟合和微分光谱给出了偏振相关的带隙能量。垂直于c轴和平行于c轴方向上的各向异性应变产生了巨大的平面内光学各向异性。介电函数模型给出了拟合的结果,估计了带隙附近的偏振度。     

解理面预处理方法对二次外延的影响

利用超晶格解理面方法制备定位生长的InAs量子线.首先以分子束外延技术在OaAs衬底上生长GaAs/AlGaAs超晶格,然后将样品取出外延系统进行解理,对解理面进行预处理之后在(110)解理面上进行二次外延.实验结果显示超晶格解理面的预处理方法对二次外延有重大影响,其中择优腐蚀比自然氧化更有利于量子线的定位生长,过高温度的脱氧除气会导致解理面的GaAs部分出现坑状结构,表明(110)面上的Ga原子容易脱附.同时,Ga原子在(110)面上的迁移长度比较大,原子的择优扩散方向为[001]方向.     

InAlA5量子点材料的AFM和拉曼散射研究

对分子束外延（MBE）自组织生长的InAlAs量子点材料进行了拉曼散射实验。结合原子力显微镜（AnD对量子点形貌观察的结果,分析了InAlAs量子点生长过程中尺寸、密度和均匀性的改变,并研究了三维岛的结构对拉曼谱线的影响。对InAlAs淀积厚度不同样品的拉曼谱分析表明,岛状结构的尺寸横纵比与类GaAsLO模和类AlAs LO模的半高全宽有密切关系。不同偏振下的拉曼实验证实了该结构中的光学声子在Z（X,X）Z偏振条件下为非拉曼活性。     

GaAs／AIGaAs二维电子气（2DEG）散射机理研究

本文采用三角阱近似，计算了GaAs/AIGaAs二维电子气（2DEG）电子只占据基态子带时，由极性光学声子、声学形变势、声学压电势、远程电离杂质、本底电离杂质、合金无序以及界面粗糙等七种主要的散射机制决定的电子迁移率与温度、2DEG浓度、本底电离杂质沈度、以及界面不平整度等的关系.理论计算结果与实验符合很好，就作者所知考虑上述七种散射机制计算2DEG电子迁移率的工作，以前未见报道。     

Electronic Energy Levels in an Asymmetric Quantum-Dots-in-a-Well Structure for Infrared Photodetectors

Theoretical calculation of electronic energy levels of an asymmetric InAs/InGaAs/GaAs quantum-dots-in-a-well （DWELL） structure for infrared photodetectors is performed in the framework of effective-mass envelope-function theory. Our calculated results show that the electronic energy levels in quantum dots （QDs） increase when the asymmetry increases and the ground state energy increases faster than the excited state energies. Furthermore, the results also show that the electronic energy levels in Q Ds decrease as the size of QDs and the width of quantum well （QW） in the asymmetric DWELL structure increase. Additionally, the effects of asymmetry, the size of QDs and the width of QW on the response peak of asymmetry DWELL photodetectors are also discussed.     

A Simple Route of Morphology Control and Structural and Optical Properties of ZnO Grown by Metal-Organic Chemical Vapour Deposition

Employing the metal-organic chemical vapour deposition （MOCVD） technique, we prepare ZnO samples with different morphologies from the film to nanorods through conveniently changing the bubbled diethylzinc flux （BDF） and the carrier gas flux of oxygen （OCGF）. The scanning electron microscope images indicate that small BDF and OCGF induce two-dimensional growth while the large ones avail quasi-one-dimensional growth. X-ray diffraction （XRD） and Raman scattering analyses show that all of the morphology-dependent ZnO samples are of high crystal quality with a c-axis orientation. From the precise shifts of the 20 locations of ZnQ （002） face in the XRD patterns and the E2 （high） locations in the Raman spectra, we deduce that the compressive stress forms in the ZnO samples and is strengthened with the increasing BDF and OCGF. Photoluminescence spectroscopy results show all the samples have a sharp ultraviolet luminescent band without any defects-related emission. Upon the experiments a possible growth mechanism is proposed.     

多晶AlN光学性质研究

运用X射线衍射仪和拉曼光谱仪,测量了物理气相输运(PVT)方法生长的AlN多晶材料的X射线衍射和常温拉曼光谱。常温拉曼光谱研究了晶界、晶面方向与拉曼频率的关系,观察到了E和E峰位基本不随测量位置变化,与晶界无关,但是E1(TO),A1(LO)和Quasi-LO声子峰位却明显与晶界有关,为研究晶粒间、晶粒内应力提供了有效手段。     

厚度对MOCVD生长InN薄膜位错特性与光电性质的影响

研究了金属有机物化学气相沉积法制备的不同厚度InN薄膜的位错特性与光电性质.基于马赛克微晶模型,通过X射线衍射非对称面摇摆曲线测量,拟合出样品刃型位错密度分别为4.2×10¹⁰cm^-2和6.3×10¹⁰cm^-2,并发现样品的微晶扭转角与位错密度随薄膜厚度增加而减小.通过室温霍尔效应测量得到样品载流子浓度分别为9×10¹⁸cm^-3和1.2×10¹⁸cm关键词： 氮化铟 位错 载流子起源 局域态     

Anisotropic Spin Splitting in Step Quantum Wells

By the method of finite difference, the anisotropic spin splitting of the AlxGa1-xAs/GaAs/Aly Ga1-yAs/AlxGal-xAs step quantum wells （QWs） are theoretically investigated considering the interplay of the bulk inversion asymmetry and structure inversion asymmetry induced by step quantum well structure and external electric field. We demonstrate that the anisotropy of the total spin splitting can be controlled by the shape of the QWs and the external electric field. The interface related Rashba effect plays an important effect on the anisotropic spin splitting by influencing the magnitude of the spin splitting and the direction of electron spin. The Rashba spin splitting presents in the step quantum wells due to the interface related Rashba effect even without external electric field or magnetic field.     

Spin–orbit coupling effects on the in-plane optical anisotropy of semiconductor quantum wells

We theoretically study the influence of the spin–orbit coupling(SOC) on the in-plane optical anisotropy(IPOA) induced by in-plane uniaxial strain and interface asymmetry in(001) GaAs/AlGaAs quantum wells(QWs) with different well width. It is found that the SOC has more significant impact on the IPOA for the transition of the first valence subband of heavy hole to the first conduction band(1H1E) than that of 1L1E. The reason has been discussed. The IPOA of(001) InGaAs/InP QWs has been measured by reflectance difference spectroscopy, whose amplitude is about one order larger than that of GaAs/AlGaAs QWs. The anisotropic interface potential parameters of InGaAs/InP QWs are also determined. The influence of the SOC effect on the IPOA of InGaAs/InP QWs when the QWs are under tensile, compressive or zero biaxial strain are also investigated in theory. Our results demonstrate that the SOC has significant effect on the IPOA especially for semiconductor QWs with small well width, and therefore cannot be ignored.