反向区逐步逼近调节平衡法调节QJ-23型箱式单臂电桥

介绍一种能使电桥迅速平衡的方法.     

雪崩击穿条件下4.5kV IGBT器件的背面优化研究

The static avalanche breakdown behavior of 4.5 kV high-voltage IGBT is studied by theory analysis and experiment. The avalanche breakdown behaviors of the 4.5 kV IGBTs with different backside structures are investigated and compared by using the curve tracer. The results show that the snap back behavior of the breakdown waveform is related to the bipolar PNP gain, which leads to the deterioration of the breakdown voltage. There are two ways to optimize the backside structure, one is increasing the implant dose of the N C buffer layer, the other is decreasing the implant dose of the P C collector layer. It is found that the optimized structure is effective in suppressing the snap back behavior and improving the breakdown characteristic of high voltage IGBT.     

一种新型二元判定图器件和电路

提出了一种基于二元判定图(BDD)原理的新型逻辑器件和电路．BDD器件以电流模式的开关电流存储器为基本单元，具有符合二元判定图的两向通路的特点．用这种器件按照BDD树形图可以构成任意形式的组合逻辑电路．给出了或门、异或门及四位加法器电路的例子，并使用HSPICE仿真器进行了仿真，验证了这种器件及其电路的正确性．     

低压条形栅功率场效应晶体管的研制

介绍一种新型低压平面结构的功率场效应晶体管--条形栅VDMOS.通过与传统的元胞型结构比较,发现条形栅具有导通电阻小、开关速度快以及工作稳定性高等特点.还对条形栅VDMOS的工艺做了介绍,其工艺过程简单,实用性强.     

MOS栅氧的界面特性和辐照特性研究

通过交流电导法,对经过不同时间N₂O快速热处理(RTP)的MOS电容进行界面特性和辐照特性研究。通过电导电压曲线,分析N₂O RTP对Si-SiO₂界面陷阱电荷和氧化物陷阱电荷造成的影响。结论表明,MOS电容的Si-SiO₂界面陷阱密度随N₂O快速热处理时间先增加再降低;零偏压总剂量辐照使氧化层陷阱电荷显著增加,而Si-SiO₂界面陷阱电荷轻微减少。     

激光二极管泵浦Nd：FAP激光器

报道激光二极管泵浦的掺钕氟磷酸钙固体激光器，该器件在重复频率为１００Ｈｚ的准连续状态下运行，当耦合输出透过率为８％时，得到３１％的斜效率，比较了ＦＡＰ和ＹＡＧ这两种介质的激光器的性能，理论分析得出的两者的阈值泵浦功率的相对值与实验结果相一致，并证实ＦＡＰ是一种有前途的适合激光二极管泵浦的激光介质。     

141Pr+波长56908 nm谱线超精细结构测量

利用共线快离子束-激光高分辨光谱学测量了141Pr+波长为56908nm谱线的超精细结构光谱，由此得到超精细相互作用常数和参与跃迁激发态、亚稳态能级的超精细能级分裂-与已有的数据比较，在实验误差范围内一致，但测量精度提高了一个数量级- 关键词： 超精细结构 快离子束-激光光谱学 磁偶极矩和电四极矩超精细作用常数     

2,2,2-三氯乙基·甲基醚的红外和Raman光谱及其振动归属

本文给出了2,2,2-三氯乙基·甲基醚的红外(3500-40cm^-1)和Raman(3500-50'^-1)光谱以及液相Raman谱退偏比的首次实验数据。利用修正价力场的正则坐标计算完成了两种构型的正则模式和势能分布的计算,从而做出频率的振动归属。由红外谱线606(反式)和573cm^-1(旁式)相对强随温度变化的关系求出平均热函差为161±11cm^-1(1922±134J/mol),证明两种构型中反式较旁式稳定。     

电子辐照对绝缘栅双极晶体管开关速度的影响

The influence of electron irradiation on the switching speed in insulated gate bipolar transistors（IGBT） with different epitaxial layer thicknesses is discussed in detail.The experimental results prove that the fall time of IGBT increases when increasing the thickness of the epitaxial layer.However,there is no obvious difference between the ratios of the fall time after irradiation to those before irradiation for different epitaxial layer thicknesses.The increase in switching speed of the IGBT is accompanied by an increase in the forward drop,and a trade-off curve between forward voltage drop and fall time of IGBT is presented.     

A novel optimization design for 3.3 kV injection-enhanced gate transistor

This paper introduces a homemade injection-enhanced gate transistor (IEGT) with blocking voltage up to 3.7 kV. An advanced cell structure with dummy trench and a large cell pitch is adopted in the IEGT. The carrier concentration at the N-emitter side is increased by the larger cell pitch of the IEGT and it enhances the P-i-N effect within the device. The result shows that the IEGT has a remarkablely low on-state forward voltage drop (V_CE(sat)) compared to traditional trench IGBT structures. However, too large cell pitch decreases the channel density of the trench IEGT and increases the voltage drop across the channel, finally it will increase the V_CE(sat) of the IEGT. Therefore, the cell pitch selection is the key parameter consideration in the design of the IEGT. In this paper, a cell pitch selection method and the optimal value of 3.3 kV IEGT are presented by simulations and experimental results.