偏光片周边精密加工关键技术研究

为满足高端TFT-LCD产品的工艺要求,必须对裁切后的偏光片周边进行精密加工.在对偏光片的结构特点和裁切机理分析的基础上,指出传统偏光片裁切加工工艺存在的不足及原因.对偏光片周边精密加工工艺及关键技术进行了较为详实的理论分析与实践总结,通过对夹紧与同步旋转机构的受力分析,论述了偏光片的最大静摩擦力矩和夹紧与同步旋转机构...     

3D封装与硅通孔(TSV)工艺技术

在IC制造技术受到物理极限挑战的今天,3D封装技术越来越成为了微电子行业关注的热点。对3D封装技术结构特点、主流多层基板技术分类及其常见键合技术的发展作了论述,对过去几年国际上硅通孔（TSV）技术发展动态给与了重点的关注。尤其就硅通孔关键工艺技术如硅片减薄技术、通孔制造技术和键合技术等做了较详细介绍。同时展望了在强大需求牵引下2015年前后国际硅通孔技术进步的蓝图。     

—种基于特高压工程的图像识别算法研究

阐述提出一种基于特高压工程的图像识别算法，通过对原始图像高斯低通滤波、平滑、亮度拉伸以及增强预处理，降低原始图像噪声，并且使图像亮度增强，探讨选取色调、饱和度以及亮度作为图像特征向量，利用模糊数据自相关函数对特高压工程图像特征进行提取。在此基础上对将图像特征向量映射到图像上，并且对特高压工程图像特征进行匹配，识别到图像中的目标。     

倒装焊机视觉定位系统

倒装焊技术被越来越多地应用于微波组件和光电子器件等高频和高速电子产品的生产制造中。介绍了倒装焊机的功能要求。重点分析了复合精密定位平台和双面双视场光学系统的设计原理和系统设计方案。通过建立设计模型,提出一种实用的图像对位算法,经应用验证,该算法能满足系统的对位精度要求。     

微组装中的LTCC基板制造技术

微组装是指在高密度多层电路基板上,采用微焊接和封装工艺将构成电路的各种半导体集成电路芯片或微型器件组装起来,形成高密度、高可靠的立体结构.通过对微电子组装及LTCC基板制造技术国内外发展、应用概况介绍,分析了LTCC基板材料技术、低温共烧技术等关键技术的发展方向.     

随机起伏冰面三维声散射的Kirchhoff近似数值计算模型

针对随机起伏冰面的声散射问题,建立了随机起伏冰面三维声散射的Kirchhoff近似数值计算模型.利用Delaunay三角剖分方法对随机起伏冰面进行三角面元剖分,然后采用Z-buffer算法进行面元的遮挡消隐,得到处于声波照射亮区的面元,最后采用Gordon面元积分的板块元方法计算得到随机起伏冰面的散射强度.数值计算模型...     

太阳能硅片丝印机视觉定位系统

太阳能硅片丝印机是太阳能电池生产行业中的关键设备,如何提高丝印精度、印刷质量和印刷效率成为研究重点,而对位技术则是其中的关键技术之一。介绍了基于机器视觉的精密对位技术在太阳能硅片丝印机中的典型应用,阐述了视觉精密定位系统的基本组成、设计原理及硬件选型,给出了CCD光学系统与UVW工作平台坐标系之间的各运动关系和对位过程。     

Two-color laser PEEM imaging of horizontal and vertical components of femtosecond surface plasmon polaritons

Explicit visualization of different components of surface plasmon polaritons (SPPs) propagating at dielectric/metal interfaces is crucial in offering chances for the detailed design and control of the functionalities of plasmonic nanodevices in the future. Here, we reported independent imaging of the vertical and horizontal components of SPPs launched from a rectangular trench in the gold film by a 400-nm laser-assisted near-infrared (NIR) femtosecond laser time-resolved photoemission electron microscopy (TR-PEEM). The experiments demonstrate that distinct imaging of different components of SPPs field can be easily achieved by introducing the 400-nm laser. It can circumvent the risk of sample damage and information loss of excited SPPs field that is generally confronted in the usual NIR laser TR-PEEM scheme. The underlying mechanism for realizing distinct imaging of different components of the SPPs field with two-color PEEM is revealed via measuring the double logarithmic dependence of photoemission yield with the 800-nm and 400-nm pulse powers of different polarizations. Moreover, it is found that the PEEM image quality of the vertical and horizontal components of the SPPs field is nearly independent of the 400-nm pulse polarization. These results pave a way for SPPs-based applications and offer a possible solution for drawing a space—time field of SPPs in three dimensions.     

Improvement of femtosecond SPPs imaging by two-color laser photoemission electron microscopy

Clear imaging of surface plasmon polaritons (SPPs) is a prerequisite for SPPs-based applications. In this work, we demonstrate an improvement of near-field imaging of SPPs via directly comparing the visibility of the photoemission electron microscopy (PEEM) image of SPPs under one- and two-color laser excitation (also known as one- or two-color laser PEEM). By measuring the photoelectron yield and the contrast of the interference fringes of SPPs, we demonstrate that in addition to enhancing the photoemission yield, two-color laser PEEM can significantly improve the contrast between bright and dark fringes (nearly 4 times higher than that of one-color laser case). By recording the nonlinear order of the photoelectrons ejected from the bright and dark fringes, respectively, the underlying mechanism for the improved visibility is revealed. In addition, the influences of the polarization direction of 400-nm laser on the PEEM images of the SPPs with different wave vector directions are shown. These results can provide technical support for the development of SPPs-based communication devices and catalysis.