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In conventional light-emitting diodes (LED’s), the external efficiency is limited by total internal reflection at the semiconductor-air interface. An LED with a textured top surface can increase the light-extraction efficiency. This paper reports a new method to fabricate AlGaInP-based nanorod light emitting diodes (LEDs) by using self-assemble metal layer nano-masks and inductively coupled plasma (ICP). Light power measurements indicates that the scattering of photons considerably enhance the probability of escaping from the nanorod LEDs. The light-intensity of the nanorod LED is increased by 34% for a thin GaP window layer, and by 17% for 8 μm GaP window layer. The light power of the nanorod LED is increased by 25% and 13%, respectively. 相似文献
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动物肝脏中九种多溴联苯醚残留量的GC—NCI/MS分析 总被引:6,自引:1,他引:5
建立了动物肝脏中9种PBDEs残留量的气相色谱-负化学离子源/质谱(GC-NCI/MS)的分析方法。动物肝脏样品经V(正己烷)∶V(丙酮)=1∶1超声辅助提取,中性与酸性硅胶层析柱净化和V(正已烷)∶V(CH2Cl2)=1∶1洗脱和浓缩后,以PCB-103为内标物,采用GC-NCI/MS的选择离子监测方式(SIM)对其中的9种PBDEs残留量进行了定性与定量分析。当动物肝脏空白样品的加标质量浓度为5.0、20.0μg/kg(PBDE-183为6.0、24.0μg/kg)时,9种PBDEs的平均加标回收率为75.1%~88.2%,相对标准偏差为3.3%~7.9%,方法检出限均小于0.07μg/kg;线性范围除PBDE-183为0.12~600.0μg/kg外,其余8种PBDEs为0.1~500.0μg/kg,相关系数都大于0.9993。所建立的分析方法已用于5种动物肝脏的8个样品中9种PBDEs残留量的分析。 相似文献
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In this paper AlGaInP light emitting diodes with different types of electrodes:Au/Zn/Au-ITO Au/Ti-ITO Au/Ge/Ni-ITO and Au-ITO are fabricated. The photoelectricity properties of those LEDs are studied. The results show that the Au/Zn/Au electrode greatly improves the performance of LEDs compared with the other electrodes. Because the Au/Zn/Au electrode not only forms a good Ohmic contact with indium tin oxide (ITO), but also reduces the specific contact resistances between ITO and GaP, which are 1.273×10-6 ·cm2 and 1.743×10-3 ·cm2 between Au/Zn/Au-ITO and ITO-GaP respectively. Furthermore, the textured Zn/Au-ITO/Zn electrode is designed to improve the performances of LEDs, reduce the forward-voltage of the LED from 1.93 to 1.88 V, and increase the luminous intensity of the LEDs from 126 to 134 mcd when driven at 20 mA. 相似文献
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本文计算了GaP/Au 反光镜, GaP/SiO2/Au 三层ODR and GaP/ITO/Au 三层ODR的反射率随角度的变化值。制作了GaAs衬底的AlGaInP LED,Au反光镜、SiO2 ODR和ITO ODR的薄膜AlGaInP LED。在20mA下,四种样品光输出功率分别为1.04mW, 1.14mW, 2.53mW and 2.15mW。制作工艺退火后,Au扩散使Au/GaP反光镜的反射率降至9%。1/4波长的ITO和SiO2透射率不同造成了两种薄膜LED光输出功率不同。ITO ODR中加入Zn可以大大降低LED的电压,但并不影响LED的光输出。 相似文献
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ITO作为电流扩展层的AlGaInP 发光二极管可靠性研究 总被引:2,自引:2,他引:0
Three aging experiments were performed for AlGaInP light emitting diodes(LED) with or without indium tin oxide(ITO),which is used as a current spreading layer.It was found that the voltage of the LED with an ITO film increased at a high current stressing,while there was little change for that of the LED without the ITO.The results of the LEDs with different thicknesses of the ITO film show that the LED with a thicker ITO has a higher reliability.The main reason for the voltage increase of the LED with the ITO film might be the current crowding in the ITO film around the P-type electrode. 相似文献
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分析了薄膜发光二极管中光子的路径,对比了AlGaInP薄膜发光二极管的反光镜有无AlGaInP层的反射率,分析了AlGaInP层的吸收并计算了光提取效率。制作了不同GaP厚度的TF AlGaInP LED。在20mA的驱动电流下,0.6μm GaP的LED比8μm GaP 的LED光输出功率高33%。提出了在0.6μm GaP的LED中腐蚀去除非欧姆接触点处的重掺GaP。在n型电极和p型欧姆接触点间的电流扩展的设计和优化需要更进一步的研究。 相似文献
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The path of photons in the thin film(TF) light emitting diode(LED) was analyzed.The reflectivity of reflector in AlGaInP TF LED with and without the AlGaInP layer was contrasted.The absorption of the AlGaInP layer was analyzed and then the light extraction was calculated and shown in figure.The TF AlGaInP LED with 8μm and 0.6μm GaP was fabricated.At the driving current of 20 mA,the light output power of the latter is 33% higher.For the 0.6μm GaP LED,the etching of heavily doped GaP except the ohmic contact dot area is advised. The design and optimizing of current spreading between the n-type electrode and the p-type ohmic contact dot need further research. 相似文献