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1.
采用RF-PECVD法制备了磷掺杂氢化非晶硅(a-Si∶H)薄膜作为太阳电池窗口层.通过椭偏仪、Keithley 4200对所制备样品进行分析测试,研究了不同掺杂比例对非晶硅薄膜沉积速率、消光系数、折射率、光学带隙及电导率等的影响.实验表明:薄膜沉积速率随掺杂浓度升高先减小再增大;薄膜消光系数、折射率及禁带宽度随掺杂浓度升高呈现先减小后增大再减小的现象;电导率则先增大后减小再增大.  相似文献   
2.
采用独特的快速循环纳米晶化技术(RRTA)对直流磁控溅射制备的非晶CoNbZr软磁膜进行纳米晶化。研究了不同的纳米晶化工艺条件下,薄膜的微观结构和软磁性能。结果表明,CoNbZr软磁薄膜晶粒细化到30 nm,RRTA晶化方法可有效地控制CoNbZr薄膜的软磁性能。  相似文献   
3.
NiFe/Ag multilayers were prepared by dc sputtering onto glass-ceramic substrates directly at room temperature. The samples were thermally processed by rapid recurrent thermal anneal (RRTA). We studied the effects of RRTA on giant magnetoresistance (GMR) NiFe/Ag multilayer by contro11ing the anneal temperature as well as the rapid anneal cycle. The samples after three RRTA cycles have a similar annealing temperature dependence of GMR responses to the ordinary annealed samples. With the increasing anneal cycle, the GMR response improved at first and then reached an unexpected high value of 9% before descent rapidly. Microstructure study shows that this effect is ascribed to the transformation of continuous NiFe layer into discontinuous one, and then into a granular like film in a step-by-step way.  相似文献   
4.
采用射频磁控溅射法制备了用于液晶光阀光敏层的a-Si1-x(CdTe)x∶H薄膜.研究了CdTe含量对氢化非晶硅薄膜光学性能的影响.采用扫描电镜(SEM)、X光电子能谱(XPS)、椭偏仪等测试手段对薄膜的表面形貌、成分和光学性能进行了表征.结果表明,薄膜的折射率和吸收系数均随x值的增大而增大;而光学带隙E.pt随x值的增大从2.01 eV降到1.75 eV.薄膜在可见光范围内透过率随着x值的增大而有所降低,且吸收边发生红移.  相似文献   
5.
为了制备具有紫外光电特性的TiO2薄膜,采用直流磁控溅射(DC)的方法在不同温度的玻璃基片上制备了TiO2薄膜。通过用X射线衍射(XRD)、扫描电子显微镜(SEM)、X-射线能谱仪(EDS)测试薄膜的晶体结构、表面形貌和薄膜组成成分。结果表明:当基片温度在250℃及以上时,制备出具有锐钛矿结构的TiO2薄膜,并且有较好化学计量比。TiO2薄膜电阻在紫外光照射下的响应时间随基片温度的升高而减少。  相似文献   
6.
Electrical transport properties in nanostructure have experimentally and theoretically importance. The interest in such researches is stimulated by possible applications in microelectronic devises such as giant magnetoresistance (GMR) sensor and magnetic random access memory (MRAM). One interesting property of the electrical transport in magnetic multilayer composed of ferromagnetic separated by nonmagnetic layers is the spacer dependence of GMR oscillation, which is generally believed to …  相似文献   
7.
Since Yoshizawa et al found iron-basednanocrystalline soft magnetic materials in 1988[1],nanocrystalline soft magnetic thin films have attractedmuch attention due to their wide applications.According to the random anisotropy model proposedby Herzer[2,3], as grain size is smaller than theexchange correlation length, coercivity andpermeability will be proportional and inverselyproportional to the grain size to sixth power,respectively. Therefore, in order to reach excellent softmagnetic properti…  相似文献   
8.
激光高反射膜的研究   总被引:3,自引:1,他引:2  
研究混合膜(TiO2 Ta2O3;Ta2O5 ZrO2)的色散规律,用Ta2O5 ZrO2和SiO2成功地镀制出两个波段(632.8nm,1.06μm)的激光反射膜,使激光破坏阈值提高5%-15%(1.06μm),膜层吸收小,机械强度增加。  相似文献   
9.
The structural variation and its influence on the 1/f noise of a-Si_(1-x)Ru_x thin films are investigated by Raman spectroscopy,transmission electron microscopy, and low frequency noise measurement. The Ru atoms are introduced into the amorphous silicon thin films by rf magnetron co-sputtering. Ru2 Si nanocrystals are found in the as-deposited samples. It is shown that the 1/f noise of the films can be reduced by a slight doping with Ru atoms. Moreover, both the microstructure and the 1/f noise performance of a-Si_(1-x)Ru_x thin films could be improved through a high-temperature annealing treatment.  相似文献   
10.
采用等离子体化学气相沉积(PECVD)法,以高纯度硅烷(SiH4)为反应气体,硼烷(B2H6)为掺杂气体,在ITO玻璃衬底上制备出硼轻掺杂浓度的氢化非晶硅(a-Si∶H)半导体薄膜。测量了样品的光暗电导率、折射率、消光系数、禁带宽度随掺杂浓度的变化。结果表明:随着硼掺杂浓度的增加,薄膜的暗电导率先减小后增大。消光系数、禁带宽度等都随着掺杂浓度的增加而变化。在不同工艺条件下,改变硼掺杂浓度,确定了最佳掺杂比(光暗电导率之比最大),制备出适合器件级轻掺杂氢化非晶硅薄膜光敏层。  相似文献   
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