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Controlled growth and field emission of vertically aligned AlN nanostructures with different morphologies 下载免费PDF全文
The controllable growth of three different morphologies of AlN
nanostructures (nanorod, nanotip and nanocrater) arrays are
successfully realized by using chemical vapour deposition (CVD)
technology. All three nanostructures are of single crystal h-AlN
with a growth orientation of [001]. Their growth is attributed to
the vapour-liquid-solid (VLS) mechanism. To investigate the factors
affecting field emission (FE) properties of AlN nanostructures, we
compare their FE behaviours in several aspects. Experimental results
show that AlN nanocrater arrays possess the best FE properties, such
as a threshold field of 7.2~V/μm and an emission current
fluctuation lower than 4%. Moreover, the three AlN nanostructures
all have good field emission properties compared with a number of
other excellent cathode nanomaterials, which suggests that they are
future promising FE nanomaterials. 相似文献
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No-catalyst growth of vertically-aligned AlN nanocone field electron emitter arrays with high emission performance at low temperature 下载免费PDF全文
The AlN nanostructures with a wide band-gap of 6.28 eV are considered as ideal cold cathode materials because of their low electron-affinity. Many methods have been devoted to fabricating AlN nanostructures, but high growth temperature over 800°C and the use of the catalysts in most methods limit their practical application and result in their poor field-emission behaviours in uniformity. This paper reports that without any catalysts, a simple chemical vapour deposition method is used to synthesize aligned AlN nanocone arrays at 550°C on silicon substrate or indium tin oxide glass. Field emission measurements show that these nanocones prepared at low temperature have an average turn-on field of 6 V/μm and a threshold field of 11.7 V/μm as well as stable emission behaviours at high field, which suggests that they have promising applications in field emission area. 相似文献
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对引起片式多层陶瓷电容器(MLCC)击穿失效的主要因素进行了研究。根据MLCC的实际结构特点和材料特性建立模型,利用有限元模拟方法分析了典型缺陷对MLCC样品内部电场强度分布的影响,进一步地总结、分析了MLCC样品的击穿特性,具有一定的参考价值。 相似文献
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首先,对传统的物料管控方法进行了总结和分析;然后,提出一种基于质量规格书的物料管控方法;最后,给出了该方法中质量规格书的具体内容.该方法既保障了元器件的固有可靠性,又可以免去使用单位的来料检测实验,是一种简便、 有效的物料管控方法. 相似文献
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