Simple and low-cost fabrication of a metal nanoplug on various substrates by electroless deposition

An electroless deposition(ELD) method is introduced to fabricate a metal nanoplug for its advantages of simplicity,low cost and auto-selectivity.It was demonstrated that nanoplugs of less than 50 nm in diameter can be fabricated by ELD nickel on various substrates,such as silicon,tungsten and titanium nitride.The main composition of the ELD nanoplug was characterized as nickel by an energy dispersive X-ray microanalyzer.A functional vertical phase-change random access memory(PCRAM) device with a heater diameter of around 9μm was fabricated by using the ELD method.TheⅠ-Ⅴcharacteristics demonstrated that the threshold current is only 90.8μA.This showed that the ELD process can satisfy the demands of PCRAM device application,as well as device performance improvement.The ELD process provides a promising method for the simple and low-cost fabrication of metal nanoplugs.     

用化学镀方法在不同衬底上制备纳米尺度金属插塞电极的研究

纳米尺度金属插塞电极在现代纳米电子学中有很重要的应用价值。本文研究了用化学镀方法制备纳米尺度金属插塞电极,具有简单、低成本和自选择性的优点。化学镀甚至可以分别在硅衬底、钨衬底和氮化钛衬底上制备出直径小于50纳米的镍插塞电极。用能量色散X射线微量分析仪（EDXM）测定出用化学镀在硅衬底上制备出的纳米尺度插塞电极的主要成分是镍。最后,采用化学镀方法,制备了直径为9微米的插塞电极的垂直结构相变存储器器件。通过研究器件的电流-电压特性表明,化学镀方法可以满足器件应用要求。因此,用简单、低成本的化学镀方法来制备纳米尺度金属插塞电极,对器件的应用有重要意义。