COMPUTER AIDED ANALYSIS OF CARRIER ENERGY TRANSPORT IN MOSFETs

The two-dimensional numerical simulation of energy transport for MOSFETs ispresented,in which the effect of generation,recombination and temperature gradient of carrierson the characteristics of devices are considered.An improved mobility model is also proposed.The numerical results of micron and submicron MOSFETs show that the present model fitsexperiment very well.     

MOSFET中载流子能量输运计算机辅助分析

本文提出了能量输运问题的二维MOSFET的数值模拟,其中计入了产生、复合以及载流子的温度梯度对器件特性的影响;还提出了改进的迁移率模型。对微米和亚微米MOSFET样品的模拟结果表明,本文所提出的模型和方法与实验符合得很好。     

亚微米MOSFET的计算机模拟

本文阐述了在考虑载流子能量输运的基础上建立起来的亚微米MOSFET的数值模型.在计入能量弛豫时间和量子沟道展宽效应的基础上提出一种改进的迁移率模型.数值结果表明理论和实验符合得相当好.