退火处理对ZnO薄膜结晶性能的影响

研究了退火处理对ZnO薄膜结晶性能的影响.ZnO薄膜由直流反应磁控溅射技术制得,并在O2气氛中不同温度(200～1000℃)下退火,利用X射线衍射(XRD)、原子力显微镜(AFM)和X射线光电子能谱(XPS)对其结晶性能进行了研究,提出了一个较为完善的ZnO薄膜退火模型.研究表明:热处理可使c轴生长的薄膜取向性增强;随退火温度的升高,薄膜沿c轴的张应力减小,压应力增加;同时晶粒度增大,表面粗糙度也随之增加.在640℃的应力松弛温度(SRT)下,ZnO薄膜具有很好的c轴取向,沿c轴的应力处于松弛状态,晶粒度不大,表面粗糙度较小,此时ZnO薄膜的结晶性能最优.     

硅表面氧化膜的X光电子谱及部分参数固定法曲线拟合

本文用Ｘ光电子谱及部分参数固定曲线拟合方法分析了热生长硅氧化膜和硅的自然氧化膜中硅和氧的结合状态，发现两者均不是单一的ＳｉＯ２，硅在以上两种氧化膜中共有四种氧化状态，即Ｓｉ＋１，Ｓｉ＋２，Ｓｉ＋３和Ｓｉ＋４，它们相对于体Ｓｉ２ｐ，峰的化学位移分别为０．８５，２．３５，３．５５和４．６０ｅＶ．在硅的初期氧化阶段无Ｓｉ＋４成分出现．     

Lifetimes of High Spin States in an Odd-Proton Nucleus 129Cs

Lifetimes of high spin states in 129Cs axe measured using the Doppler shift attenuation method. The high spin states of 129 Cs axe populated following the fusion evaporation reaction 124 Sn（UB, 6n）129 Cs at a beam energy of 65 MeV. The reduced transition probabilities B（E2） and the transition quadrupole moments Qt in the negativeand positive-paxity bands are deduced. The experimental results indicate that the Qt values of the negative parity band are smaller than those of the positive parity bands, probably due to different γ-deformation driving effects of different proton orbitals. The Qt values exhibit a considerable increase near the band crossing region in these bands. This behavior demonstrates that nuclear shape changing results from the neutron or proton alignments. The signature splitting of the πh11/2 and πg7/2 bands shows the opposite changing trend after backbending due to the h11~2 neutron and h11/2 proton alignments, respectively.     

晶体硅中的铁沉淀规律

研究了在直拉单晶硅和铸造多晶硅中经110 0℃热处理快冷或慢冷条件下所形成的铁沉淀规律及其对少数载流子扩散长度的影响.红外扫描仪照片显示在直拉单晶硅中慢冷却形成的铁沉淀密度较低,而且其尺寸较大;在铸造多晶硅中,铁易在晶界上沉淀,沉淀规律也依赖于冷却速度.表面光电压仪测试结果表明:无论在直拉单晶硅材料中还是在铸造多晶硅材料中,快冷形成的铁沉淀对少数载流子扩散长度影响更大.实验结果可以用铁沉淀生成的热力学和动力学规律解释     

氮气氛中高温热处理硅片表面的直接氮化

研究了直拉硅单晶片在氮气氛下热处理时的表面氮化,利用了XPS(X射线光电子谱)、SEM(扫描电子显微镜)、金相显微镜、XRD(X射线衍射仪)等手段研究了在高纯氮和非高纯氮保护条件下不同温度热处理后的样品表面,结果发现只有用高纯氮保护和温度高于1100℃的条件下,氮气才能与硅表面发生反应,生成氮化硅(Si3N4)薄膜,否则氮保护中微量的氧气会和硅表面发生反应,生成二氧化硅(SiO2)薄膜.     

Room-temperature electroluminescence of p-ZnxMg（1-x）O：Na/n-ZnO p-n junction light emitting diode

p-ZnxMg1-xO：Na/n-ZnO p-n junction light emitting diode （LED） was produced on n-ZnO （0001） single-crystal substrate using pulsed laser deposition. The realization of band gap engineering was achieved by the incor-poration of Mg in ZnO layers and was confirmed by photoluminescence spectrum. The p-type ZnxMg1-xO：Na film with low resistance was obtained at 500 ℃ and in which, Na has taken effect evidenced by Hall and X-ray photo-electron spectroscopy measurements. The current-voltage curve of LED showed a rectifying behavior and obvious electroluminescence was realized by feeding a direct current up to 40 mA. Furthermore, its structural and electric characters are discussed as well.     

室温生长ZnO薄膜晶体管的紫外响应特性

在室温下采用射频磁控溅射法制备了以ZnO薄膜为沟道层的薄膜晶体管(TFTs).研究表明ZnO薄膜在紫外区具有较高的吸收率,并且ZnO-TFTs对紫外光照射较为敏感.因此,进一步深入研究了ZnO-TFTs紫外光照下的输出和转移特性,结果表明,紫外光照将引起较为明显的光响应电流,且经过光照的器件在光源移除7天后,ZnO沟道层中仍能观察到残余电导现象,其原因可以归结为紫外光辐射在ZnO沟道层中引入了一定数量的氧空位施主态缺陷.     

c(2×2)-(K+CO)在Co{1010}表面吸附的NEXAFS研究

对CO和K共吸附在CO{1010}表面的系统进行了O的1s NEXAFS理论研究,证实吸附分子CO的键长比气体状态时增长约0.01nm.用MSC(多重散射团簇)理论计算谱与实验结果比较发现：在原π峰右侧出现了一个新的弱结构.证明了此结构是由于K通过钴衬底对CO的间接作用造成的,它具有π共振的性质. 关键词：     

Shape evolution and test of the critical-point symmetry X(5) in 176Os

The lifetimes of excited states in the yrast band of ¹⁷⁶Os have been measured up to I=20h level using the Doppler shift attenuation method. The high-spin states of ¹⁷⁶Os were populated via fusion evaporation reaction ¹⁵²Sm(²⁸Si, 4n)¹⁷⁶Os at a beam energy of 140 MeV. The results support an X(5) structure for ¹⁷⁶Os at low spin. This structure disappears at high spin and shows a symmetry rotor character. The shape change of ¹⁷⁶Os is similar to that of ¹⁷⁸Os.     

Shedding vortex simulation method based on viscous compensation technology research

Owing to the influence of the viscosity of the flow field, the strength of the shedding vortex decreases gradually in the process of backward propagation. Large-scale vortexes constantly break up, forming smaller vortexes. In engineering, when numerical simulation of vortex evolution process is carried out, a large grid is needed to be arranged in the area of outflow field far from the boundary layer in order to ensure the calculation efficiency. As a result, small scale vortexes at the far end of the flow field cannot be captured by the sparse grid in this region, resulting in the dissipation or even disappearance of vortexes. In this paper, the effect of grid scale is quantified and compared with the viscous effect through theoretical derivation. The theoretical relationship between the mesh viscosity and the original viscosity of the flow field is established, and the viscosity term in the turbulence model is modified. This method proves to be able to effectively improve the intensity of small-scale shedding vortexes at the far end of the flow field under the condition of sparse grid. The error between the simulation results and the results obtained by using fine mesh is greatly reduced, the calculation time is shortened, and the high-precision and efficient simulation of the flow field is realized.