大尺寸电磁加热的氮化物MOCVD反应室温度场的仿真与优化

本文通过对电磁加热八英寸晶片的立式氮化物MOCVD反应室建立数学模型,利用有限元法,对传统的加热结构进行了优化.为提高晶片温度分布的均匀性,本文提出了矩形槽和圆环段形槽两种不同槽结构的基座,通过对这两种槽结构基座的优化分析发现,与传统用的基座相比,这两种槽结构的基座改变了传统基座中的传热方式和不同方向的传热速率,从而提高了晶片温度分布的均匀性,这有利于提高薄膜生长的质量.     

感应加热的立式MOCVD反应室中一种∧形槽的基座

利用有限元法对感应加热的金属有机化学气相淀积（MOCVD）反应室的温度场进行了数值计算研究,研究发现,由于集肤效应,MOCVD反应室中传统的圆柱形基座中的温度分布不均匀,本文提出了一种∧形槽结构的基座,∧形槽改变了基座中的传热方式和速率,从而提高了被加热晶片温度分布的均匀性。通过对加热四英寸的基座优化发现,与传统的基座相比,优化后的基座,使晶片温度均匀性提高了85%,而且对这种优化的加热结构,在不同的温度下,晶片温度分布仍保持一定的均匀性,这有利于薄膜材料的生长。     

A susceptor with a ∧-shaped slot in a vertical MOCVD reactor by induction heating

By using the numerical simulation for the temperature field in the metal organic vapor deposition （MOCVD） reactor by induction heating, it is found that the temperature distribution in the conventional cylinder-shaped susceptor is nonuniform due to the skin effect of the induced current, which makes the temperature distribution of the wafer nonuniform. Therefore, a novel susceptor with a A-shaped slot is proposed. This slot changes the mode and the rate of the heat transfer in the susceptor, which improves the uniformity of the temperature distribution in the wafer. By using the finite element method （FEM）, the susceptor with this structure for heating a wafer of four inches in diameter is optimized. It is observed that the optimized susceptor with the A-shaped slot makes the uniformity of the temperature distribution in the wafer improve by more than 85%, and a good uniformity of temperature distributions is kept under different wafer temperatures, which may be beneficial to the film growth.