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本文研究了电子束光刻中电子能量(10—30keV)和电荷剂量(10~(-6)—10~(-3)C·cm~(-2))对铝栅MOS电容器的损伤和低温退火(<500℃)的影响。研究电子束光刻中高能量(30keV)和高剂量(10~(-3)C·cm~(-2))电子束引起的损伤,对电子束汽相显影光刻和电子束无显影光刻是有实际意义的。实验表明,平带电压的损伤可高达十几伏,界面态密度可高达10~(12)cm~(-2)eV~(-1)以上。在一定电荷剂量下,平带电压的损伤对电子能量的变化(在一定范围内)不敏感。在一定电子能量下,界面态密度的损伤对电荷剂量的变化(在一定范围内)不敏感。低温(<500℃)退火能完全消除平带电压的损伤,但不能完全消除界面态密度的损伤。 相似文献
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The irradiation damages in the electron beam lithography(EBL)to Al-gate MOS capacitors inthe ranges of 10—30keV and 10~(-6)—10~(-3)C·cm~(-2) and the effects of annealing on damages at lowtemperature(<500℃)are given.The research on damages caused by high electron energy(30keV)and ultra-high dosages(10~(-4)—10~(-3) C·cm~(-2))is important and useful to the EBL.The resolution canbe improved by high electron energy.Both the EBL with vapor-development and withoutdevelopment are all operated at ultra-high dosages.After irradiations,the concentrations of inter-face states can increase by about one to two orders of magnitude and the flat-band voltages by abouta few to more than ten volts.Under constant exposure dosages,the fiat-band voltages areindependent of the changes of electron energies in certain energy ranges.Under constant electronenergies the concentrations of interface states are independent of the changes of exposure dosages incertain dosage ranges.After annealing,the flat-band voltages can recover the values before theirradiations for energies and dosages in the ranges of 10—30keV and 1×10~(-6)—6×10~(-3)C·cm~(-2)respectively.The interface state concentrations due to the damages of ultra dosages can not beremoved completely. 相似文献
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本文介绍了一种先进的新型背散射电子探测器。随着电子束曝光机的发展,特别是加速电压高的时候,对背散射电子探测器的性能要求就愈来愈高,例如,信噪比、响应时间等。在与各种探测器比较的基础上,我们设计了微通道板探测器,它是目前用于电子束曝光机的最先进的探测器。 相似文献
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