透明导电CdIn2O4薄膜的结构和Seebeck效应

在Ar和O2混合气氛中,利用直流反应磁控溅射Cd-In合金靶制备了CdIn2O4(简称CIO)薄膜,利用AFM和XRD技术表征了薄膜的形貌和组成,用XPS分析了薄膜的化学成分和元素价态,并在室温下测量了CIO薄膜的Seebeck效应以及加入磁场后的Seebeck效应.实验结果表明:CIO薄膜是多晶薄膜,其表面粗糙度为1.60～2.60nm,晶粒大小为13～36nm,晶界清晰.它由CIO相和In2O3相组成,部分样品还含有微量的CdO相,退火处理后氧缺乏状态和氧充足状态的面积比由退火前的0.69增加到0.71,薄膜的导电性能得到提高.CIO薄膜具有非常明显的Seebeck效应,温差电动势随温差的增加而线性增加,温差电动势率随着电阻的增加而减小;加入磁场后,薄膜的温差电动势率变小.文章对制备条件和结构的关系以及Seebeck效应和加入磁场后的Seebeck效应的机理作了详细探讨.     

Growth and photoluminescence properties of inclined ZnO and ZnCoO thin films on SrTiO_3（110） substrates

ZnO thin film growth prefers different orientations on the etched and unetched SrTiO 3（STO）（110） substrates.Inclined ZnO and cobalt-doped ZnO（ZnCoO） thin films are grown on unetched STO（110） substrates using oxygen plasma assisted molecular beam epitaxy,with the c-axis 42 inclined from the normal STO（110） surface.The growth geometries are ZnCoO[100]//STO[110] and ZnCoO[111]//STO[001].The low temperature photoluminescence spectra of the inclined ZnO and ZnCoO films are dominated by D 0 X emissions associated with A 0 X emissions,and the characteristic emissions for the 2 E（2G）→ 4A2（4F） transition of Co 2＋ dopants and the relevant phonon-participated emissions are observed in the ZnCoO film,indicating the incorporation of Co 2＋ ions at the lattice positions of the Zn 2＋ ions.The c-axis inclined ZnCoO film shows ferromagnetic properties at room temperature.     

Growth and photoluminescence properties of inclined ZnO and ZnCoO thin films on SrTiO₃（110） substrates

ZnO thin film growth prefers different orientations on the etched and unetched SrTiO 3(STO)(110) substrates.Inclined ZnO and cobalt-doped ZnO(ZnCoO) thin films are grown on unetched STO(110) substrates using oxygen plasma assisted molecular beam epitaxy,with the c-axis 42 inclined from the normal STO(110) surface.The growth geometries are ZnCoO[100]//STO[110] and ZnCoO[111]//STO[001].The low temperature photoluminescence spectra of the inclined ZnO and ZnCoO films are dominated by D 0 X emissions associated with A 0 X emissions,and the characteristic emissions for the 2 E(2G)→ 4A2(4F) transition of Co 2+ dopants and the relevant phonon-participated emissions are observed in the ZnCoO film,indicating the incorporation of Co 2+ ions at the lattice positions of the Zn 2+ ions.The c-axis inclined ZnCoO film shows ferromagnetic properties at room temperature     

Ferromagnetism,variable range hopping,and the anomalous Hall effect in epitaxial Co：ZnO thin film

A series of high quality single crystalline epitaxial Zn 0.95 Co 0.05 O thin films is prepared by molecular beam epitaxy.Superparamagnetism and ferromagnetism are observed when the donor density is manipulated in a range of 10 18 cm 3-10 20 cm 3 by changing the oxygen partial pressure during film growth.The conduction shows variable range hopping at low temperature and thermal activation conduction at high temperature.The ferromagnetism can be maintained up to room temperature.However,the anomalous Hall effect is observed only at low temperature and disappears above 160 K.This phenomenon can be attributed to the local ferromagnetism and the decreased optimal hopping distance at high temperatures.     

Ferromagnetism, variable range hopping and anomalous Hall effect in epitaxial Co:ZnO thin film

A series of high quality single crystalline epitaxial Zn_0.95Co_0.05O thin films is prepared by molecular beam epitaxy. Superparamagnetism and ferromagnetism are observed when the donor density is manipulated in a range of 10¹⁸ cm^-3-10²⁰ cm^-3 by changing the oxygen partial pressure during film growth. The conduction shows variable range hopping at low temperature and thermal activation conduction at high temperature. The ferromagnetism can be maintained up to room temperature. However, the anomalous Hall effect is observed only at low temperature and disappears above 160 K. This phenomenon can be attributed to the local ferromagnetism and the decreased optimal hopping distance at high temperatures.     

透明导电CdIn2O4薄膜的结构和Seebeck效应

在Ar和O2混合气氛中,利用直流反应磁控溅射Cd-In合金靶制备了CdIn2O4(简称CIO)薄膜,利用AFM和XRD技术表征了薄膜的形貌和组成,用XPS分析了薄膜的化学成分和元素价态,并在室温下测量了CIO薄膜的Seebeck效应以及加入磁场后的Seebeck效应.实验结果表明CIO薄膜是多晶薄膜,其表面粗糙度为1.60～2.60nm,晶粒大小为13～36nm,晶界清晰.它由CIO相和In2O3相组成,部分样品还含有微量的CdO相,退火处理后氧缺乏状态和氧充足状态的面积比由退火前的0.69增加到0.71,薄膜的导电性能得到提高.CIO薄膜具有非常明显的Seebeck效应,温差电动势随温差的增加而线性增加,温差电动势率随着电阻的增加而减小;加入磁场后,薄膜的温差电动势率变小.文章对制备条件和结构的关系以及Seebeck效应和加入磁场后的Seebeck效应的机理作了详细探讨.