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A Ti:sapphire crystal with a diameter of 235 mm and thickness of 72 mm was grown by the heat exchange method(HEM). The absorption intensity of the crystal at 532 nm averaged at 91%. The figures of merit(FOMs)at different positions of the crystal were measured and the FOM value in the central region was found to reach 90.The transmittance laser beam was intact with no obvious distortions and had only a small deformation compared with the incident laser beam. A small-signal amplification experiment was performed on the Ti:sapphire crystal and a gain of more than 6 times was achieved with a pump energy density of 1.98 J∕cm~2. These tests indicate that the 235 mm Ti:sapphire crystal has excellent optical qualities and will further improve the energy output of a 10 PW laser system. 相似文献
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FCBGA封装芯片中晶片凸块和基片凸块之间的non-wet问题是一个已知的能导致严重低良品率和引入可靠性隐患的问题。本文研究了FCBGA封装形式中non-wet的典型失效模式和揭示了其生成机制, 并确定了晶片凸块表面残留的铅和锡氧化物是导致晶片凸块和基片凸块之间non-wet的主要成因。晶片凸块回流工艺实验表明,优化后的回流时间和氢气流速能显著减少和去除晶片凸块表面的铅锡氧化物,从而能把non-wet引起的报废率降低90%左右。 失效分析结果和量产数据都验证了本文揭示的non-wet的失效机制是正确的。 研究确定的凸块回流工艺的优化参数显著降低了non-wet引起的报废率,从而大大地节省了制造成本和提高了产能利用率。 相似文献
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