Studies on the Adsorption of Asymmetrical Triblock Copolymers by Scheutjens-Fleer Theory and Monte Carlo Simulation

The adsorption of asymmetrical triblock copolymers from a non-selective solvent on solid surface has been studied by using Scheutjens-Fleer mean-field theory and Monte Carlo simulation method on lattice model. The main aim of this paper is to provide detailed computer simulation data, taking A8-kB20Ak as a key example, to study the influence of the structure of copolymer on adsorption behavior and make a comparison between MC and SF results. The simulated results show that the size distribution of various configurations and density-profile are dependent on molecular structure and adsorption energy. The molecular structure will lead to diversity of adsorption behavior. This discrepancy between different structures would be enlarged for the surface coverage and adsorption amount with increasing of the adsorption energy. The surface coverage and the adsorption amount as well as the bound fraction will become larger as symmetry of the molecular structure becomes gradually worse. The adsorption layer becomes thicker with increasing of symmetry of the molecule when adsorption energy is smaller but it becomes thinner when adsorption energy is higher. It is shown that SF theory can reproduce the adsorption behavior of asymmetrical triblock copolymers. However, systematic discrepancy between the theory and simulation still exists.The approximations inherited in the mean-filed theory such as random mixing and the allowance of direct back folding may be responsible for those deviations.     

不同灰阶参考板实验室双向反射比定标的研究

通过大量实验数据处理分析，出了不同灰阶参考板的双向的反射比因子随角度变化的特性，并阐明了参考板在野外太阳入射角不断变化条件下使用，双向反射比的校正显得非常必要。     

弯曲疲劳短裂纹扩展规律研究

本文对３５ＣｒＭｏ钢和４２ＣｒＭｏ钢带穿透短裂纹（初始裂纹长度ａ＝０．１～０．５ｍｍ）的试件进行了弯曲疲劳试验研究，得到了在弯曲疲劳加载下短裂纹扩展速率的计算表达式以及应力比，试件厚度对短裂纹扩展的影响。     

0.34 THz高速无线通信发射机芯片设计

基于0.13μm Si Ge Bi CMOS工艺,设计了一个应用于0.34 THz高速通信系统的4路集成相控阵发射机芯片。该芯片集成了21.25 GHz的锁相环(PLL)频率源、4倍频器、4路威尔金森(Wilkinson)功分网络,每一路相控阵通道包括85 GHz功率放大器、模拟移相器、20 Gbps二进制启闭键控(OOK)调制器、4倍频器以及2×2片载天线阵列。针对系统各个模块进行了测试和分析,并且对系统方向图进行了仿真。仿真结果表明,该相控阵系统能在E面实现±12°的角度扫描,3 d B波束宽度为11.9°,系统有效等向辐射功率(EIRP)为12 d Bm。该集成相控阵发射机芯片的面积为8 mm×4.3 mm。     

不同灰阶参考极实验室双向反射比定标的研究

通过大量实验数据处理分析，给出了不同灰阶参考板的双向反射比因子随角度变化的特性，并阐明了参考板在野外太阳入射角不断变化条件下使用，双向反射比的校正显得非常必要。     

紧凑型荧光灯夹封技术的研究

本文扼要叙述了紧凑型荧光灯采用无芯柱夹封封口技术的优点，介绍了夹封灯管的结构设计，以及研究过程中出现的问题和解决办法。     

高集成度X波段1W单通道硅基三维集成器件

南京电子器件研究所基于自有的8寸硅基射频微系统工艺线,研制了一款工作在X波段输出功率1W的高集成度单通道硅基三维集成器件.该器件以高阻硅为原材料,结合TSV转接板、晶圆级键合、高密度RDL以及多层BGA POP等三维集成工艺技术,在8.5 mm × 8.5 mm × 3.0mm的体积内实现了GaAs多功能芯片、收发电源...