SmCo非晶垂直磁化膜的TEM研究

由轻稀土Sm和3d过渡族金属Co组成的SmCo非晶垂直磁化膜具有独特的磁、磁光和磁电性能,是制作高密度存贮器件和薄膜传感器的一种很有前途的材料。本文用透射电子显微镜(TEM)研究了用双源共蒸发法制备的SmCo非晶磁化膜的显微结构特征及其与成份、温度的依赖关系。讨论了非晶态SmCo磁化膜的形成过程及其结构对磁光特性的影响。实验结果表明:1.SmCo非晶磁化膜的典型结构是由直径约30A的高密度柱状区和一个低密度的网络组成的,如图1所示,图中右上角的电子衍射插图表明该结构是典型的非晶态。2.Sm_xCo_(100-x)(15相似文献   

Effect of a Cr Underlayer on the Magnetic Properties of TbCo Amorphous FIlms with Perpendicular Anisotropy

The effect of the Cr underlayer on the magnetic properties of TbCo amorphous films with perpendicular anisotropy has been investigated.It was found that the Cr underlayer thickness can influence the coercivity of TbCo films.A coercivity as high as 6.3kOe was obtained in 120nm Tb31Co69 films with a 180nm Cr underlayer.This was only 4.4kOe for the same thickness Tb31 CO69 films without the Cr underlayer.Cross-sectional scanning electron microscopy indicated that the TbCo film with the Cr underlayer consisted of a Column structure.It is considered that this heterogeneous structure gives rise to the coercity enhancement of TbCo films in the presence of the Cr underlayer.     

具有垂直磁各向异性的TbCo／Cr非晶磁化膜

采用不加偏压的磁控溅射方法,制备了具有垂直磁晶各向异性的TbCo/Cr非晶垂直磁化膜,并且就Cr底层对TbCo膜磁性能的影响进行了研究。研究发现TbCo磁性层的厚度以及Cr底层的存在都会影响TbCo薄膜磁晶各向异性能的大小。对于厚度为120 nm,并且带有180 nm厚度Cr底层的Tb31C69薄膜而言,其磁晶各向异性能高达4.57×106 erg·cm-3,而对于同样厚度的Tb31C69薄膜,当它没有带Cr底层时,其磁晶各向异性能只有3.24×106 erg·cm-3。扫描电镜的观测结果表明,带有Cr底层的TbCo薄膜具有柱状结构。正是TbCo薄膜内的柱状结构导致了其磁晶各向异性的增强。     

基于磁旋转编码器定位控制系统的研究

文章提出一种磁旋转编码器方法用于热连铸轧钢生产线从卷取机上卸载并输送带钢的小车测控。介绍磁旋转编码器测控系统的原理,包括:磁旋转编码器的工作原理、放大整形电路的设计、倍频电路的设计、单片机接口和测控软件的设计。该系统的特点是能抗恶劣环境、可靠性高、精确度高、结构简单、使用寿命长。     

GdFeCo/AIN/DyFeCo静磁耦合多层薄膜磁化方向转变的研究

对GdFeco／AIN／DyFeco静磁耦合多层薄膜变温磁化方向变化进行了研究。结果表明读出层GdFeCo随温度上升从平面磁化转变成垂直磁化，转变过程中受饱和磁化强度(M)和有效各向异性常数影响，但主要受饱和磁化强度(M)的影响。在高温时读出层的磁化强度很小，退磁场能减小，在静磁耦合作用下，使GdFeCo读出层的磁化方向发生转变，而且磁化方向的转变在较小的温度范围内变化较快。     

金属颗粒薄膜巨磁电阻效应的影响因素

研究金属颗粒薄膜的颗粒尺寸、磁性组分等对巨磁电阻效应的影响.在自由电子模型和自旋相关散射理论的基础上，计算了金属颗粒膜体系的电子平均散射势.在计算过程中将自旋相关项与宏观量相联系，得到了巨磁电阻效应与磁性成分比例、颗粒尺寸的关系.磁电阻效应的模拟曲线表明，增加磁性成分比例和减小磁性颗粒尺寸可增强颗粒膜的巨磁电阻效应. 关键词：     

Magnetic Exchange—Coupled Sm（Co,R）／Cr（R=Al,Si,Ti,Nb,Cu）series Films for Ultrahigh—Density Longitudinal Recording Media

SmCoR(R=Al,Si,Ti,Nb,Cu)/Cr series films were fabricated as one kind of promising materials for the ultrahigh density longtudinal magnetic recording media.The Sm(Co,Al,Si)/Cr thin with coercivity up to 2.36kOe,squareness ratio S near 0.94 and coercive squareness ratio S^* about 0.9 were obtained.The Cr interlayer caused magnetic decoupling in Sm(Co,Al,Si)/Cr/Sm(Co,Al,Si)thin films,High coercivtty of 3400-3840Oe and extremely fine grain size of 5-8nm for the magnetic layer were examined.Using different substrate bias among the Sm(Co,Al,Si)(deposited with substrate bias of -150V)/Sm(Co,Al,Si)(deposited with no substrate bias)/Sm(Co,Al,Si)(deposited with substrate bias of -150V),the multilayer exhibited high coercivity of 2960Oe and S^* of 0.96,Sm(Co,Al,Si)/Sm(Co,Ti,Cu)/Sm(Co,Nb,Cu) trilayer improved matching between the magnetic layer and the Cr underlayer,and led to increasing in-plane anisotropy,high coercivity of 3280Oe and S* of 0.92,Lattice matching of SmCoR{112} and Cr{110},etc.were found under various conditons.The microstructures of these four kinds of medium were also examined.The results suggest that it is possible to produce Sm(Co,Al,Si,Ti,Nb,Cu)multi-layer media with the combined magnetic properties required for the ultrahigh desity magnetic recording.     

遗传算法在椭圆偏振测量中的应用

详细介绍了椭圆偏振法测量的基本原理和椭偏函数方程的建立 ,将遗传算法引入到椭偏法测试薄膜的折射率和厚度的计算中 ,改善了计算的收敛性并提高收敛速度。给出了计算程序流程图 ,重点分析了各遗传算子的设计。     

磁控射频溅射法制备光波导薄膜研究

采用磁控射频溅射法制备了用作光波导器件的玻璃薄膜。通过选取不同的溅射材料,在不同溅射条件下制备的玻璃薄膜的光学参数进行的测量、比较,并对其作为光波导的性能进行研究,通过理论上推导与计算,得出了在１,５５ｕｍ窗口下制备光波导器件的玻璃薄膜所应具备的溅射条件。     

光波导用玻璃薄膜的制备及其性能研究

采用磁控射频溅射法制备光波导用玻璃薄膜。本文重点分析了不同溅射条件如氧分压、基片种类、基片温度下制备的薄膜光学性能，通过比较，得到制备0.6328μm和1.55μm窗口下光波导器件用玻璃薄膜所需溅射条件。