结晶化学基础理论在现代X射线单晶结构分析中的一些应用

研究化学物质分子结构的方法很多,而衍射法是其中主要的方法之一,它包括X射线衍射、中子衍射和电子衍射等。由于X射线容易得到,而且成本较低,因此、X射线衍射法是分     

分割电极片状压电致动器——(二)位移特性及狭缝宽度对其影响的实验研究

研究了悬臂梁式分割电极片状压电致动器的位移特性。理论分析表明，分割电极狭缝宽度会减小致动器自由端的位移输出，但当狭缝宽度小于致动器电极宽度的１０％时，可忽略狭缝宽度的影响。致动器端部位移的测试结果大于理论计算值。与现有磁头悬浮臂尺寸相近的致动器，在２０Ｖ～５０Ｖ的电压驱动下均可获得１μｍ～２μｍ的致动位移。对９８５０道／厘米的密度磁盘，该位移能覆盖至少一个磁道宽度，满足磁头定位两级伺服系统对第二级致动器位移的基本要求。     

PINNING EFFECT OF LEAD LANTHANUM TITANATE THIN FILMS DEPOSITED ON DIFFERENT SUBSTRATES

Pinning effect of lead lanthanum titanate (PLT) ferroelectric thin films with excess PbO of 20 mol% has been studied for deposition on diffe rent substrates. Silicon, sapphire and quartz were used as substrates on which P t/Ti or LaNiO₃ thin films were deposited as bottom electrodes. Electron probe analysis results showed that there was still a certain amount of excess Pb in PLT films after annealing at 550 ℃ for 1 h, and the amount of it was dependent on the substrate used. The distribution of excess Pb in the films was investig ated by Auger electron spectroscopy depth profile. It was shown that the substrates and the bottom electrodes had significant effects on the content and distrib ution of excess Pb in PLT films. The excess Pb and its accumulation at the inter face between the film and bottom electrode may act as pinning centers and have a pinning effect on domains, which can be observed by abnormal P-E hysteresis loops and abnormal C-V curves. The excess Pb content in the films and the accumulation of Pb at the interface were high in PLT films deposited on Pt/Ti/S i, and considerable pinning effect was observed. As LaNiO₃ would absorb most part of the excess Pb in PLT films, the content of excess Pb in the films deposited on LaNiO₃/Si was very low and the pinning effect was hardly observed.     

半导体和IC

半导体和ＩＣ１４位２ＭＨｚ取样Ａ／Ｄ转换器　　　　　　　查询号２３１Ｄａｔｅｌ公司的ＡＤＳ－９１９是一种高性能１４位２ＭＨｚ取样Ａ／Ｄ转换器，可按照奈奎斯特频率对输入信号进行取样而无遗漏码。ＡＤＳ－９１９具有优异的动态性能，信噪比为７７ｄＢ，总谐波失真为－７４ｄＢ。这种功能完备的ＡＤＳ－９１９采用２４脚ＤＤＩＰ封装，具有快速建立取样保持放大器、Ａ／Ｄ转换器、精密电压基准、定时／控制逻辑和纠锗电路。数字输入和输出电平为ＴＴＬ。ＡＤＳ－９１９采用±１５ｖ（±１２Ｖ）和＋５Ｖ电源，功耗为１．８Ｗ（±１…     

有机磷化合物的质谱研究(Ⅵ)——磷酰二胺酯类化合物的电子轰击质谱和化学电离质谱

本文报道了7种新的N-烷基-N′-乙氧羰基甲基-N′-芳磺酰基-O-乙基磷酰二胺酯化合物的电子轰击质谱(EIMS)和化学电离质谱(CIMS,甲烷为反应气)。结果表明,无论是EIMS,还是CIMS均存在较多的骨架重排离子峰;取代基对谱图有较大的影响;EIMS中P—N键的断裂为重要质谱特征,CIMS中MH~+准分子离子为重要特征离子,还存在分子离子反应的产物。     

N-取代苯并咪唑和N-取代-2-硫代噻唑烷酮类化合物的质谱研究

本文所研究的7种N-取代苯并咪唑和硫代噻唑烷酮类化合物是一类新合成的具有较高杀菌活性的化合物。本文利用电子轰击质谱技术对表中所列的化合物进行了研究。在高分辨精确质量测量和亚稳离子测定的基础上着重讨论了分子内3、4位C—C键的断裂和与杂环     

苯基吡唑氧基丙酸衍生物的设计、合成及其对水稻纹枯病的杀菌活性（英文）

水稻纹枯病是水稻的三大病害之一,发病后可造成水稻严重减产,使用杀菌剂是使水稻免遭病害侵扰的有效途径之一.由于杀菌剂使用一段时间后病菌不可避免地会对其产生抗药性,因此需要不断开发结构新颖的化合物.采用中间体衍生化方法,设计并合成了25个结构新颖的苯基吡唑氧基丙酸衍生物.所有化合物都进行了离体生物活性测试,并讨论了构效关系.生物活性测试数据表明,结构新颖的苯基吡唑氧基丙酸衍生物对水稻纹枯病菌均具有良好的抑制作用,其中2-((1-(4-氯苯基)-1H-吡唑-3-基)氧基)-N-(4-硝基苯基)丙酰胺(17)(EC50=1.05mg/L)和2-((1-(4-氯苯基)-1H-吡唑-3-基)氧基)-N-(吡啶-2-基)丙酰胺(22)(EC50=1.02mg/L)对水稻纹枯病菌的杀菌活性与对照药物戊唑醇(EC50=1.02mg/L)相当;2-((1-(4-氯苯基)-1H-吡唑-3-基)氧基)-N-(3,4-二氯苯基)丙酰胺(20)(EC50=0.95mg/L)活性略优于商品化对照药剂戊唑醇(EC50=1.02 mg/L).     

碳原子簇的结构与质谱关联

在自制的仪器上以脉冲激光蒸发和电离单质碳样品,可以产生各种大小的碳原子簇正负离子。这些原子簇的飞行时间质谱可以直接与Hückel规则、Euler定理等相关联。而由此分析得出,随着碳原子簇的增大,它们所经历的各种基本几何构型的转化。     

低价钒化合物结构化学研究 Ⅰ. [VCL2·(THF)4]+[ZnCl3·THF]-的合成与晶体结构

The title compound has been synthesized under nitrogen atmosphere using V_2O_5 for the initiator by Schlenk techniques. It′s single crystal, which is very air and water-sensitive, was obtained and determined from three-dimensinal x-ray diffraction data collected by the four-circle diffractometer. The crystals are orth- orhombic with space group D_2~4-P_(212121) and unit cell constants a=0.909 nm, b=1.4909 nm, c=2.1635 nm and z=4. We derived first the positional parameters of V, Zn, Cland O atoms by direct method using SHELXTL program. The coordinates of other the non-hyleast-squares refinement for all atoms gave a final discrepency factor R=0.0945 and RW=0.0674.The result of structure analysis shows that the compound is composed of the octahedral cation [VCl_2·(THF)_4]~+ and the tetrahedral anion [ZnCl_3·THF]~-.The reaction mechanism was discussed. The title compound is reaction product of VCl_3 with ZnCl_2 in THF.