Constraints on the sum of neutrino masses using cosmological data including the latest extended Baryon Oscillation Spectroscopic Survey DR14 quasar sample

We investigate the constraints on the sum of neutrino masses(Σm_v) using the most recent cosmological data, which combines the distance measurement from baryonic acoustic oscillation in the extended Baryon Oscillation Spectroscopic Survey DR14 quasar sample with the power spectra of temperature and polarization anisotropies in the cosmic microwave background from the Planck 2015 data release. We also use other low-redshift observations,including the baryonic acoustic oscillation at relatively low redshifts, Type la supernovae, and the local measurement of the Hubble constant. In the standard cosmological constant A cold dark matter plus massive neutrino model,we obtain the 95% upper limit to be Σm_v 0.129 eV for the degenerate mass hierarchy,Σm_v 0.159 eV for the normal mass hierarchy, and Σm_v 0.189 eV for the inverted mass hierarchy. Based on Bayesian evidence, we find that the degenerate hierarchy is positively supported, and the current data combination cannot distinguish between normal and inverted hierarchies. Assuming the degenerate mass hierarchy, we extend our study to non-standard cosmological models including generic dark energy, spatial curvature, and extra relativistic degrees of freedom, but find these models are not favored by the data.     

Si上Si1-xGex:C 缓冲层的载流子分布

用化学气相淀积方法在Si(100)衬底上生长了Ge组分渐变的Si1-xGex:C合金缓冲层.研究表明,较高温度下生长的Si1-xGex:C缓冲层中Ge的平均含量较高,其晶体质量要优于较低温度下生长的外延薄膜.载流子浓度沿衬底至表面方向逐渐上升且Si1-xGex:C缓冲层总体呈p型导电,存在一局域n型导电区,本文对其导电分布特性进行了分析研究.     

Temperature dependence of the light yield of the LAB-based and mesitylene-based liquid scintillators

We studied the temperature dependence of the light yield of linear alkyl benzene(LAB)-based and mesitylene-based liquid scintillators. The light yield increases by 23% for both liquid scintillators when the temperature is lowered from 26 to-40, correcting for the temperature response of the photomultiplier tube. The measurements help to understand the energy response of liquid scintillator detectors. Especially, the next generation reactor neutrino experiments for neutrino mass hierarchy, such as the Jiangmen Underground Neutrino Observatory(JUNO), require very high energy resolution. As no apparent degradation on the liquid scintillator transparency was observed, lowering the operation temperature of the detector to ～4 will increase the photoelectron yield of the detector by 13%, combining the light yield increase of the liquid scintillator and the quantum efficiency increase of the photomultiplier tubes.     

基于均匀色彩空间的LED可见光通信调制方法

针对LED可见光通信系统中传输信号容易被人眼感知而导致视觉质量下降的缺陷,提出一种使用均匀色彩空间的数据信号调制方法。首先将非均匀的RGB颜色空间转换到符合人类色彩感知特性的Lab和ULAB均匀色彩空间,并将数据信号嵌入其中;接着使用色差方程来计算色彩变化的幅度,并结合数据信号的误码率来评估通信质量;最后对所提的方法与传统使用YCrCb色彩空间的方案进行了实验对比,结果表明提出的方法通信质量和视觉质量效果更好,色差NBS(0.02-2.0)和误码率(0.006 3-0.07)均能够稳定地保持在较低的数值范围。     

~(13)C(α, n)~(16)O background in a liquid scintillator based neutrino experiment

α from natural radioactivity may interact with a nucleus and emit a neutron. The reaction introduces the background to the liquid scintillator(LS) based neutrino experiments. In the LS detector, α comes from 238 U,232Th,and 210 Po decay chains. For Gadolinium-doped LS(Gd-LS) detector, α also comes from 227 Ac. The nucleus 13 C is a natural component of Carbon which is rich in the LS. The background rate and spectrum should be subtracted carefully from the neutrino candidates. This paper describes the calculation of neutron yield and spectrum with uncertainty estimated. The results are relevant for many existing neutrino experiments and future LS or Gd-LS based experiments.     

图书管理系统软件设计

介绍了适合中小型企事业单位图书馆使用的图书管理系统软件的设计方法,包含系统功能设计,数据库设计,系统设计和用户权限设置方法。     

Si1-xGex∶C缓冲层上Ge薄膜的CVD外延生长

用化学气相沉积方法，在Si(100)衬底上生长Si1-xGex∶C合金作为缓冲层，继而外延生长了Ge晶体薄膜. 根据AES测量结果可以认为，缓冲层包括由衬底中的Si原子扩散至表面与GeH4, C2H4反应而生成的Si1-xGex∶C外延层和由Si1-xGex∶C外延层中Ge原子向衬底方向扩散而形成的Si1-xGex层. 缓冲层上外延所得Ge晶体薄膜晶体取向较为单一，其厚度超过在Si上直接外延Ge薄膜的临界厚度，且薄膜中的电子迁移率与同等掺杂浓度(1.0E19cm-3)的体Ge材料的电子迁移率相当.     

应变硅薄膜的厚度对材料迁移率的影响

用化学气相沉积方法在SiC/Si上外延生长了应变硅薄膜.扫描电子显微镜方法显示所得样品具有明显的Si/SiC/Si三层结构,喇曼散射光谱和X射线衍射测量结果表明外延的Si薄膜存在应变.Hall效应测量证明相比于相同浓度的体Si材料应变Si薄膜具有较高的霍尔迁移率;但随着应变硅层厚度的增加,霍尔迁移率下降,这应与薄膜中应变减小和失配位错有关.     

应变硅薄膜的厚度对材料迁移率的影响

用化学气相沉积方法在SiC/Si上外延生长了应变硅薄膜.扫描电子显微镜方法显示所得样品具有明显的Si/SiC/Si三层结构,喇曼散射光谱和X射线衍射测量结果表明外延的Si薄膜存在应变.Hall效应测量证明相比于相同浓度的体Si材料应变Si薄膜具有较高的霍尔迁移率;但随着应变硅层厚度的增加,霍尔迁移率下降,这应与薄膜中应变减小和失配位错有关.     

Si1-xGex:C缓冲层上Ge薄膜的CVD外延生长

用化学气相沉积方法,在Si(100)衬底上生长Si1xGex:C合金作为缓冲层,继而外延生长了Ge晶体薄膜.根据AES测量结果可以认为,缓冲层包括由衬底中的Si原子扩散至表面与GeH4,C2H4反应而生成的Si1-xGex:C外延层和由Si1-xGex:C外延层中Ge原子向衬底方向扩散而形成的Si1-xGex层.缓冲层上外延所得Ge晶体薄膜晶体取向较为单一,其厚度超过在Si上直接外延Ge薄膜的临界厚度,且薄膜中的电子迁移率与同等掺杂浓度(1.0×1019 cm-3)的体Ge材料的电子迁移率相当.