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Deep-level transient spectroscopy and photocapacitance techniques (steady -state spectroscopy, transient spectroscopy, optical isothermal transient spectroscopy and initial slope technique) have been used to study the deep-level defects in Te-doped GaAs0.8P0.4. Two electron defects(A and B center) with thermal activation energies of 0.20 and 0.40eV and photoioni-zaton threshold energies of 0.60 and 1.31eV (T = 300K) have been detected. The B center has nonexponential transient capacitance and larger difference between thermal activation energy and photoionization threshold energy. It is suggested that B center belongs to the DX center type. The relation of photoionization section spectrosopy of the B center to the temperature has been studied. It has been found that the photoionization section spectroscopy has an obvious multi-phonon-widen effect. These results support the large -lattice-relaxation model of B center. From the photoionization section spectra at eight different temperatures (104-300K), we have obtained the photoionization threshold energies (1.41-1.31eV) and the lattice relaxation energies(1.25-1.15eV) of B center, which decrease with the increasing temperature in near linear rule. A configuration coordinate diagram has been drawn to describe the large-lattice-relaxation of B center. 相似文献
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用离子注入法配合优化退火新技术制成了一种高效发光材料InP(Yb);用高灵敏度激光光谱仪测量了该材料的发光特性(PL),并研究了离子注入和退火过程中发光特性的变化,对PL谱峰作出辨认;用X射线衍射谱(XDS)测量分析晶格结构和注入损伤(缺陷);研究了原材料的掺杂(Sn)对发光特性的影响;较深入地探讨了该材料的发光机制,并用一改进RE发光中心模型阐明该材料的激发发光过程。 相似文献
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用DLTS技术结合光电容定态谱、瞬态谱、OITS谱研究了GaAs_(0.6)P_(0.4):Te深中心的光电性质和电声耦合作用,在GaAs_(0.6)P_(0.4):Te中检测到两种深中心(A和B中心),表观热激活能分别为0.20和0.40eV,光离化阀值分别为0.60和1.31eV。详细研究了B中心的特性,测量了光离化截面谱的温度关系,发现有明显的声于展宽现象和晶格弛豫效应,并在低温(90K)观察到B中心的持续光电导效应。描绘出位形坐标图,说明了实验结果,较好地描述了B中心的特性,确认B中心属于DX中心。 相似文献
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本文提出含多个深能级响应的光电容瞬态分析方法:在不考虑各能级之间电子、空穴跃迁的条件下,可出“多指数过程分离法”,将总的瞬态过程分离为各能级上指数型瞬态过程之和.运用这一方法,对lMeV(4×1015cm-2电子辐照GaP LED进行了定态和两种注入条件的瞬态光电容测量,观察到H1、H2、H3三个空穴能级(0.51、0.75、1.15eV)和E1、E2、E3、E4四个电予能级(0.68、0.84、0.89、1.01eV),并得到各能级的光离化截面谱.外量子效率及发射谱测量结果表明;电子辐照引入的深能级(H1-H3,E1-E4)表现出无辐射复合中心的性质. 相似文献
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用光致发光谱(PL)、傅里叶变换红外吸收话(FTIR)和X射线衍射谱(XRD)等研究了稀土(Er)和氧(O)双离子注入GaAs和Si的发光特性和高效发光机理。PL测量结果发现:(Er和O)双注入样品对比Er单注入样品的发光(PL)强度(Er的1.54μm峰)显著增大,发光单色性等也有明显改善。测量并分析了该材料的FTIR和XRD谱;对该材料的高效发光机制作了较深入地探讨和澄清。 相似文献
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Rare-earth doping of semiconductors has been intensively investigated with a view to it sapplication in optoelectronic devices.The presence of an incompletely filled 4f shell offers the attractive possibility of induced intrashell excitations,largely independent of the s... 相似文献
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稀土Er离子注入InP晶体中Er发光中心的形成和光激发机制 总被引:2,自引:0,他引:2
用离子注入法对InP晶体实现高浓度稀土(RE)Er的掺杂,探索了优质材料的制作规律和条件。在低温(10-200K)测量了光致发光谱(PL),观测到Er的尖锐发光峰,其峰值波长1.538μm,其发光强度较大;研究了该材料的热退火行为,Er发光中心的形成和光激活过程;用Rutherford背散射谱(RBS)测量给出了热退火前后注Er-InP晶体中Er离子浓度的数值及深度分布;并对Er发光中心的组成和光 相似文献
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