具有不同掺杂层厚度的荧光与磷光材料相结合的高效白色有机发光器件

实验制作一种多层白色有机发光器件(WOLED)。将 绿光磷光材料和红光磷光材料 Ir(piq)₂(acac)共掺到母体BPhen中作为绿光和红光发光层;荧光材料DPVBi作为蓝光发 光层,通过改变掺杂层的厚度,得到了高效率的白色WOLED。器件的最大电流效 率可达4.55cd/ A,14 V时亮度达8489cd/m² ;当电压从4V变化到12 V时,色坐标从(0.52,0.34)变化到(0.34, 0.26),基本处于白光区。此器件的 特点,在于其性能可以通过简单地调整掺杂层的厚度来控制。     

Organic light emitting devices employing non-doped structure

11H(1)-benzopyropyrano(6,7-8-i,j)quinolizin-11-one (C545T) with different thicknesses of 0.05 nm, 0.10 nm and 0.20 nm. For comparing, a doped WOLED was also fabricated, in which C545T and DCM2 are codoped into DPVBi layer to provide blue, green and red emission for obtaining white emission. The maximum luminance and power efficiency of the doped WOLED are 5 765 cd/m2 at 16 V and 5.23 lm/W at 5 V, respectively, and its Commission Internationale de l’Eclairage (CIE) coordinate changes from (0.393 7, 0.445 3) at 5 V to (0.300 7, 0.373 8) at 12 V. When the thickness of the ultrathin C545T layer in non-doped WLEDs increases, the emission luminance increases, but all non-doped devices are in the yellow white region. The device with 0.10-nm-thick C545T has a maximum efficiency of 15.23 cd/A at 8 V and a maximum power efficiency of 6.51 lm/W at 7 V, and its maximum luminance is 10 620 cd/m2 at 16 V. CIE coordinates of non-doped WLEDs with C545T thickness of 0.05 nm, 0.10 nm and 0.20 nm are (0.447 3, 0.455 6), (0.464 0, 0.473 1) and (0.458 4, 0.470 0) at 8 V, respectively. This work has been supported by the Major Project of Science and Technology Office of Fujian Province of China (No.2014H0042), the Natural Science Foundation of Fujian Province of China (No.2015J01664), the Project of Science and Technology Research of Quanzhou in Fujian Province of China (Nos.2013Z125 and 2014Z137), and the 2016 Annual National or Ministries of the Quanzhou Normal University Prepare Research Foundation Project (No.2016YYKJ21).E-mail:lishuangw@126.com      

Enhanced efficiency and brightness in organic light- emitting devices with MoO3 as hole-injection layer

The organic light-emitting devices (OLEDs) using 4,4’,4’’-tris{N-(3-methylphenyl)-N-phenylamin}triphenylamine (m-MTDATA) and MoO3 or 1,3,5-triazo-2,4,6-triphosphorine-2,2,4,4,6,6-tetrachloride (TAPC) and MoO3 as the hole-injection layer (HIL) were fabricated. MoO3 can be expected to be a good injection layer material and thus enhance the emission performance of OLED. The highest occupied molecular (HOMO) of MoO3 is between those of m-MTDATA or TAPC and N,N’-bis-(1-naphthyl)-N,N’-diphenyl-1,1’-biphenyl-4,4’-diamine (NPB), which reduces the hole-injection barrier and improves the luminance of the OLEDs. The current efficiency is improved compared with that of the device without the MoO3 layer. The highest luminous efficiency of the device with 2-nm-thick MoO3 as HIL is achieved as 5.27 cd/A at 10 V, which is nearly 1.2 times larger than that of the device without it. Moreover, the highest current efficiency and power efficiency of the device with the structure indium-tin oxide (ITO)/TAPC (40 nm)/MoO3 (2 nm)/TcTa:Ir(ppy)3 (10%, 10 nm)/ tris-(8-hydroxyquinoline) aluminium (Alq) (60 nm)/LiF (1 nm)/Al are achieved as 37.15 cd/A and 41.23 lm/W at 3.2 V and 2.8 V, respectively.     

采用D形不规则多模光纤产生部分相干激光

研究了一种D形不规则多模光纤,用于产生相干度低的部分相干激光.理论分析了D形不规则多模光纤传导模型,数值模拟仿真了D形不规则多模光纤内光线轨迹和光强度分布.实验结果表明,采用长度500 mm、芯径200 μm的D形光纤作为变换元件可以得到相干度低的部分相干激光,其输出光斑相干度明显低于圆柱形阶跃折射率光纤的输出光斑相干度.     

绿色亚单层结合磷光掺杂层的白色有机发光器件

采用10-(2-benzothiazolyl)-2,3,6,7-tetrahydro-1,1,7,7-tetramethy l-1H,5H,11H(1)-benzopyroyran-o(6,7-8-i,j)quinolizin-11-one (C545T)作为亚单层材料,在蓝光层和红光层间引入亚单层C545T,制备了三种亚单层结构的有机发光器件,通过对各器件的电致发光谱、发光强度和发光效率的对比研究,发现可以通过改变C545T层的厚度,获得高效率的白色有机发光器件.     

LD抽运的Nd:YVO4激光器的被动调Q运转

采用Cr4 :YAG晶体作为可饱和吸收体,实现激光二极管(LD)端面抽运的Nd:YVO4激光器的被动调Q运转.当12.8W的LD连续抽运时,获得平均功率1.28W、重复频率40kHz、脉冲时间宽度24ns、峰值功率达1.33kW的稳定脉冲序列;当LD单次脉冲抽运时,在34mJ的抽运能量下,获得能量为0.48mJ、脉宽34ns的调Q脉冲.实验上研究了抽运功率或能量、输出镜透过率对Nd:YVO4激光器输出的影响,并给出了合理的理论解释.     

磷光与荧光相结合的多层白色有机发光器件

采用真空热蒸镀的方法制备了磷光与荧光相结合的 多层白色有机电致发光器件(OLED)。将绿 光磷光掺杂染料掺杂到母体CBP中作为绿光发光层;荧光材料 DCM2以亚单层的方式插入Alq₃中作为红光发光层;DPVBi为蓝光发光层。器件的结构为ITO /NPB(40nm)/DPVBi(d nm)/CBP:Ir(ppy)₃₈%(5nm)/ Alq₃(5nm)/DCM2(0.05nm)/Alq₃(45nm)/LiF(1nm)/AI(200nm)。实验中通过改变蓝光发 光层的厚度,得到了高效率的 白光OLED,器件的最大电流效率可达6.75cd/A,最大功率效率达2.67lm/W,最大亮度 达30440cd/m²。此外,当电压从4V变化到14V时色坐标从(0.59,0.39)变化到(0.35,0.38), 基本处于白光区。本文器件的特点在于其性能可以通过简单调整DPVBi的厚度,避免 了使用多掺杂层工艺的复杂性。     

Organic light-emitting devices based on 4,4’-bis(2,2’- diphenyl vinyl)-1,1’-biphenyl as a spacer between dual ultrathin layers

White organic light-emitting devices (WOLEDs) were fabricated by using a highly blue fluorescent dye of 4,4’-bis(2,2’-diphenyl vinyl)-1,1’-biphenyl (DPVBi) and a red fluorescent dye of 5H-benzo[ij] quinolizin-9-yl) ethenyl]-4H-pyran-4-ylidene] propane-dinitrile (DCM2), together with a green fluorescent dye of 10-(2-benzothiazolyl)- 2,3,6,7-tetrahydro-1,1,7,7-tetramethyl-1H,5H,11H-(1)-benzopyroyran-o(6,7-8-i,j) quinolizin-11-one (C545T). The multilayer WOLEDs does not involve the doping process. The structure of the device is indium tin oxide (ITO)/ 4,4’,4’’-tris{N,-(3-methylphenyl)-N-phenylamin}triphenylamine (m-MTDATA) (55 nm)/ N,N’-bis-(1-naphthyl)- N,N’-diphenyl-1,1’-biph-enyl-4,4’-diamine (NPB) (10 nm)/ DPVBi (8 nm)/ C545T (x nm)/ DPVBi (5 nm)/ DCM2 (y nm)/ tris- (8-hydroxyquinoline) aluminum (Alq3) (60nm)/ LiF (1 nm)/ Al, where the DPVBi is introduced as a spacer. By changing the thicknesses of dual ultrathin layers of C545T and DCM2, the WOLED is obtained. When x=y=0.05, the Commission Internationale de 1’Eclairage (CIE) coordinates of the device change from (0.262 6, 0.351 4) at 4 V to (0.214 7, 0.269 3) at 12 V that are well in the white region. Its maximum luminance is 41400 cd/m2 at 13 V, and the maximum current efficiency and the maximum power efficiency are 7.95 cd/A at 6 V and 5.37 lm/W at 5 V, respectively.     

Green phosphorescent organic light-emitting devices based on different electron transport layers combining with fluorescent sub-monolayer

We report a small molecule host of 4,4(-N,N)-dicarbazole-biphenyl (CBP) doped with 8% tris(2-phenylpyridine) iridium (Irppy3) for use in efficient green phosphorescent organic light-emitting devices (PHOLEDs) combined with different electron transport layers of Alq and BAlq. The PHOLEDs exhibit maximum current efficiency and power efficiency of 19.8 cd/A and 6.21 lm/W, respectively. The high performance of such PHOLEDs is attributed to the better electron mobile ability of BAlq and sub-monolayer quinacridone (QAD) as carrier trapping layer and equal charge carrier mobilities of hole and electron to form the broad carrier recombination zone in the emitting layer, which can reduce the triplet-triplet annihilation and improve the efficiency of the device. #$TABThis work has been supported by the Major Project of Science and Technology Office of Fujian Province of China (No.2014H0042), the Natural Science Foundation of Fujian Province of China (No.2015J01664), the Project of Science and Technology Research of Quanzhou in Fujian Province of China (Nos.2013Z125 and 2014Z137), and the 2016 Annual National or Ministries Preparatory Research Foundation Project in Quanzhou Normal University (No.2016YYKJ21). E-mail:yanghuishan1697@163.com      

DPVBi为激子阻挡层的亚单层有机发光器件的制备与光电性能研究

结合亚单层的有机发光技术,制备了一种多层有机电致发光器件,其结构为ITO/m-MTDATA (50nm)/ C545T (0.05nm) /DPVBi (d nm)/DCM2(0.05nm)/ Alq (60nm) /LiF(1nm) /Al.荧光材料C545T和DCM2以亚单层的方式插入DPVBi前后,通过改变DPVBi的厚度,观察器件性能的变化,当DPVBi为4 nm时,器件在4V电压下最大发光效率是4.19 cd/A,在13 V电压下最大亮度是17050 cd/m2.分析对比了四种不同厚度器件的电流密度-电压曲线、亮度-电压曲线、电致发光光谱图和色坐标,发现选择合适厚度的激子阻挡层,可以得到效率较高的器件.激子阻挡层一般选择载流子传输能力较差,HOMO能级较低的材料.所得结果对有机发光器件尤其是采用亚单层有机白光器件的设计和制作有一定的指导作用.