排序方式: 共有44条查询结果,搜索用时 15 毫秒
1.
2.
本文评述测量的重复性和再现性(R&R)分析。详细介绍了R&R 分析的统计方法和关键点。还介绍了R&R 分析方法的优点和缺点。 相似文献
3.
4.
5.
6.
7.
8.
9.
Hole mobility changes under uniaxial and combinational stress in different directions are characterized and analyzed by applying additive mechanical uniaxial stress to bulk Si and SiGe-virtual-substrate-induced strained- Si(s-Si)p-MOSFETs(metal-oxide-semiconductor field-effect transistors)along 110 and 100 channel directions. In bulk Si,a mobility enhancement peak is found under uniaxial compressive strain in the low vertical field.The combination of 100 direction uniaxial tensile strain and substrate-induced biaxial tensile strain provides a higher mobility relative to the 110 direction,opposite to the situation in bulk Si.But the combinational strain experiences a gain loss at high field,which means that uniaxial compressive strain may still be a better choice.The mobility enhancement of SiGe-induced strained p-MOSFETs along the 110 direction under additive uniaxial tension is explained by the competition between biaxial and shear stress. 相似文献
10.