电子束产生大尺度等离子体过程的数值模拟研究

建立了一个四组分一维混合模型，对电子束注入大气产生大尺度等离子体的过程进行了数值模拟.结果表明了能量为140keV、流强为50mA/cm²的注入电子束，可以产生线度为0.5m，密度为10¹²cm^-3量级的大气环境下等离子体.电子束所伴随的空间电荷效应由于等离子体的产生会很快消失，不影响后续的等离子体产生过程.电子束注入流强主要影响产生等离子体的密度，而电子束能量则同时影响其空间线度和密度. 关键词： 电子束 碰撞 电离     

Alkaloid and Glycoside Compounds from the Fruits of Berberis atrocarpa and Their Anticomplementary Activities

Chemistry of Natural Compounds -     

Solvent-free Brønsted acid-catalyzed Michael addition of nitrogen- and carbon-containing nucleophiles by ultrasound activation

A new method has been developed for the Michael addition of nitrogen- and carbon-containing nucleophiles to cyclic enones. Using this conjugate addition reaction, a variety of different nucleophiles can react with a range of cyclic enones in the presence of p-toluenesulfonic acid under solvent-free ultrasound irradiation conditions affording the corresponding C–N or C–C adducts in good to excellent yields. Comparatively, performing the reaction under ultrasound irradiation gives higher yields, is more efficient and environmentally benign than performing it at high pressure.     

氮掺杂石墨烯量子点/MOF衍生多孔碳纳米片构筑高性能超级电容器

首先采用溶液法在碳布上生长Co-MOF二维纳米片,通过高温退火和刻蚀后得到MOF衍生多孔碳纳米片。以Co-MOF衍生的多孔碳纳米片/碳布(CNS/CC)作为碳基骨架,采用电化学沉积法负载高活性氮掺杂石墨烯量子点(N-GQDs),制备得到分级多孔结构的N-GQD/CNS/CC复合材料。组装成自支撑且无粘结剂的N-GQD/CNS/CC电极,当电流密度为1 A·g~(-1)时,其比电容高达423 F·g~(-1)。通过储能机制和电容贡献机制的研究表明,在碳纤维上原位生长的具有高双电层电容的CNS和表面负载具有高赝电容的N-GQDs之间相互协同作用,使得N-GQD/CNS/CC电极具有高电容性能,是一种理想的超级电容器电极材料。电极材料的高导电、分级多孔结构有利于电子的传输和电解质离子的扩散,具有良好的动力学性能,能快速充放电和具有优异的倍率特性。将电极组装成对称型超级电容器,功率密度为250 W·kg~(-1)时对应的能量密度达到7.9 Wh·kg~(-1),且经过10 000次循环后电容保持率为91.2%,说明氮掺杂石墨烯量子点/MOF衍生多孔碳纳米片复合材料是一种电化学性能稳定的具有高电容性能的全碳电极材料。     

北京谱仪Ⅲ飞行时间计数器系统刻度中的关联分析

利用电子对事例对北京谱仪Ⅲ飞行时间的测量误差, 以及不同测量之间的关联因子随击中位置的变化进行了仔细的研究. 加权的飞行时间由不同的测量值及其相关的误差矩阵计算而得. 蒙特卡罗研究表明. 为北京谱仪Ⅲ开发的关联分析算法 可以正确地处理包含公有误差项的多个实验测量结果的合并, 并且能够为粒子鉴别提供可靠的飞行时间信息.     

Two types of diffusions at the cathode/electrolyte interface in IT-SOFCs

Analytical transmission electron microscopy, in particular with the combination of energy dispersive X-ray spectroscopy (EDX) and electron energy-loss spectroscopy (EELS), has been performed to investigate the microstructure and microchemistry of the interfacial region between the cathode (La_0.6Sr_0.4Co_0.8Fe_0.2O₃, LSCF) and the electrolyte (Gd-doped ceria, GDC). Two types of diffusions, mutual diffusion between cathode and electrolyte as well as the diffusion along grain boundaries, have been clarified. These diffusions suggest that the chemical stability of LSCF and GDC are not as good as previously reported. The results are more noteworthy if we take into consideration the fact that such interdiffusions occur even during the sintering process of cell preparation.     

锂离子电池Si@void@C复合材料的制备及其电化学性能

以纳米Si颗粒为核心,正硅酸四乙酯(TEOS)为SiO_2源,采用Stober法在Si表面包覆一层SiO_2,再以多巴胺为碳源,通过碳化处理将SiO_2表面的聚多巴胺层转化成碳层。最后,用HF刻蚀SiO_2并留下空隙,得到Si@void@C复合纳米颗粒。利用X射线衍射、扫描电镜、透射电镜和恒流充放电测试对材料的物相、微观形貌和电化学性能进行表征。结果表明,在0.1 A·g~(-1)电流密度下,Si@void@C负极材料充放电循环100次后充电比容量仍然有1 319.5 mAh·g~(-1),容量保持率为78.4%,表现出优异的电化学性能。     

Study of the THGEM detector with a reflective CsI photocathode

The THGEM detector without and with a CsI has been tested successfully. The optimal parame- ters of THGEM have been determined from eight samples. The UV photoelectric effect of the CsI photocathode is observed. The changing tendency related to the extraction efficiency (ε<,extr>) versus the extraction electric field is measured, and several electric fields influencing the anode current are adjusted to adapt to the THGEM detector with a reflective CsI photocathode.     

Study of the THGEM detector with a reflective CsI photocathode

The THGEM detector without and with a CsI has been tested successfully. The optimal parameters of THGEM have been determined from eight samples. The UV photoelectric effect of the CsI photocathode is observed. The changing tendency related to the extraction efficiency (ε_extr) versus the extraction electric field is measured, and several electric fields influencing the anode current are adjusted to adapt to the THGEM detector with a reflective CsI photocathode.     

基于CH3NH3PbI3单晶的Ta2O5顶栅双极性场效应晶体管

Organic-inorganic hybrid perovskite methylammonium lead iodide (CH₃NH₃PbI₃) generally tends to show n-type semiconductor properties. In this work, a field-effect transistor (FET) device based on a CH₃NH₃PbI₃ single crystal with tantalum pentoxide (Ta₂O₅) as the top gate dielectric was fabricated. The p-type field-effect transport properties of the device were observed in the dark. The hole mobility of the device extracted from transfer characteristics in the dark was 8.7×10^-5 cm²·V^-1·s^-1, which is one order of magnitude higher than that of polycrystalline FETs with SiO₂ as the bottom gate dielectric. In addition, the effect of light illumination on the CH₃NH₃PbI₃ single-crystal FET was studied. Light illumination strongly influenced the field effect of the device because of the intense photoelectric response of the CH₃NH₃PbI₃ single crystal. Different from a CH₃NH₃PbI₃ polycrystalline FET with a bottom gate dielectric, even with the top gate dielectric shielding, light illumination of 5.00 mW·cm^-2 caused the hole current to increase by one order of magnitude compared with that in the dark (V_GS (gate-source voltage)=V_DS (drain-source voltage)=20 V) and the photoresponsivity reached 2.5 A·W^-1. The introduction of Ta₂O₅ as the top gate dielectric selectively enhanced hole transport in the single-crystal FET, indicating that in the absence of external factors, by appropriate device design, CH₃NH₃PbI₃ also has potential for use in ambipolar transistors.