Formation and Characterization of Concentration Inhomogeneities in Melt-Grown Crystals

Crystallography Reports - The specific features of the formation of concentration inhomogeneities in crystals grown by the Czochralski method (GaSb:Te, Ge:Ga) and by the Bridgman method...     

On Groups Carrying Homogeneous Weakened Pregeometries

Siberian Advances in Mathematics - We consider the question on the existence and properties of groups carrying homogeneous weakened pregeometries.     

Nonlinear Theory of Spectra of Thermally Stimulated Currents in Complex Crystals with Hydrogen Bonds

The nonlinear theory of thermally stimulated depolarization currents is developed. The theory explains the processes of hetero- and homocharge relaxation in complex crystals with hydrogen bonds and allows the relaxation oscillator parameters to be calculated using the quadratic approximation for the external electric field.     

The thermodynamic properties of Ln2BaO4 (Ln = Sm, Dy, Ho)

The thermodynamic properties of the Ln₂BaO₄ phases (Ln = Dy, Ho, Sm) were studied by the electromotive force method with a fluoride electrolyte (890–1180 K), solution calorimetry in 1.07 N hydrochloric acid at 298.15 K, and differential scanning calorimetry (298–860 K). The experimental data were jointly processed, and the thermodynamic functions of the compounds over the temperature range 298–1200 K were calculated.     

Numerical simulation of silane decomposition in an RF plasma

A model of silane decomposition in a radio-frequency argon plasma is constructed. The concentrations of SiH₄ decomposition products, as well as products of synthesis (higher silanes), are calculated. The role of metastable argon atoms in the formation of SiH₃ radicals and the higher silanes is analyzed.     

Elemental composition of nanoclusters formed by pulsed irradiation with low-energy ions during Ge/Si epitaxy

Multilayer silicon structures with built-in layers of Ge nanoclusters were studied experimentally by Raman light scattering. The built-in layers were formed by the pulsed action of a low-energy beam of intrinsic ions during molecular-beam epitaxy. It is found that the ion-stimulated nucleation and the subsequent growth make it possible to obtain Ge nanoclusters almost free of Si.     

4英寸热氧化硅衬底上磁性隧道结的微制备

就如何在4英寸热氧化硅衬底上沉积高质量的磁性隧道结纳米多层薄膜材料和如何利用光刻方法微加工制备均匀性较好的磁性隧道结方面做了初步研究，并对磁性隧 道结的磁电性质及其工作特性进行了初步测量和讨论.利用现有的光刻设备和工艺条 件在4英寸热氧化硅衬底上直接制备出的磁性隧道结，其结电阻与面积的积 矢的绝对误差在10% 以内，隧穿磁电阻的绝对误差在7% 以内，样品的磁性隧道结性质具有较好的均匀性和一致性，可以满足研制磁随机存储器存储单元演示器件的基本要求. 关键词： 磁性隧道结 隧穿磁电阻 磁随机存储器 4英寸热氧化硅衬底     

A diode-pumped passively Q-switched Nd:GdVO4 laser with a GaAs saturable absorption

We have demonstrated a passively Q-switched operation of Nd:GdVO₄ laser in which a GaAs crystal is used as the saturable absorber for the first time as far as we know. A maximum average output power of 1.64 W was obtained at an incident pump power of 12 W, the corresponding optical conversion efficiency and peak power were 13.7% and 116.8 W, respectively. The maximum peak energy obtained in the experiment by 50% transmission couple was 19 μJ.     

Effect of accumulation on the formation of multiply charged ions in solids under grazing incidence of multiple laser radiation

The effect of accumulation on the formation of multiply charged ions in optically opaque solids as a function of the number and the angle of incidence of laser pulses is investigated by mass spectrometry. It is revealed that the accumulation effect manifests itself at prethreshold power densities q = 10⁸–10⁹ W/cm² irrespective of the angle of incidence of laser radiation α = 18°–85° and at subthreshold power densities q > 10¹⁰ W/cm² in the case of grazing incidence of laser radiation at an angle α = 85°. The accumulation effect brings about an increase in the maximum charge multiplicity Z _max of tungsten ions and a decrease in the number of impurity ions and in their intensity. No accumulation effect is observed at subthreshold power densities when laser radiation is incident at an angle α = 18°.