基于ZBLANⅩⅣPr,Yb频率上转换发光的三维立体显示

本文对利用ZBLANⅩⅣPr,Yb频率上转换发光的三维立体显示做了研究,探讨了其中的一些物理问题.在实验中,我们利用Yb³⁺离子敏化的方法提高Pr³⁺的上转换发光效率;通过降低能引起单频上转换发光的激光强度来提高寻址点和非寻址点在显示过程中的对比度.     

向量值函数的Mcshane积分

本文讨论了向量值函数的Ｍｃｓｈａｎｅ积分的性质．例如收敛定理和原函数的性质等．     

A Genus-3 Topological Recursion Relation

In this paper, we give a new genus-3 topological recursion relation for Gromov-Witten invariants of compact symplectic manifolds. This formula also applies to intersection numbers on moduli spaces of spin curves. A by-product of the proof of this formula is a new relation in the tautological ring of the moduli space of 1-pointed genus-3 stable curves. Research of the first author was partially supported by NSF grant DMS-0204824 Research of the second author was partially supported by NSF grant DMS-0505835     

同步辐射与GGG：Nd^3＋晶体的相互作用

用北京同步辐射489A-VUV束线作为连续光源测定了GGG:Nd~(3+)晶体的短波吸收光谱。用束线4B9A-WX作为光源激发GGG:Nd~(3+),测定了它的XEOL(X-ray excited optical luminescence)。     

Yb:GdVO4晶体的缺陷研究

Yb：GdVO4晶体是一种很好的激光材料，但缺陷会对晶体的激光性能产生严重影响，开展对该晶体的缺陷研究有助于提高晶体质量。采用提拉法生长了面25mm×20mm，掺杂浓度为2％的Yb：GdVO4晶体；分析了晶体的结构及其对晶体解理性的影响；采用化学腐蚀法，以盐酸、氢氟酸为腐蚀剂，对晶体的主要晶面进行了化学腐蚀实验，通过其腐蚀坑形貌对晶体中的位错和晶界进行了研究；对晶体进行了高分辨X衍射实验，结果表明晶体中存在镶嵌块结构；开裂及散射颗粒也为晶体中较常见缺陷。分析了缺陷的成因并提出了预防措施。     

Stable, reproducible nanorecording on rotaxane thin films

Stable, reversible conductance transitions and memory effects were observed in solid-state rotaxane-based Langmuir-Blodgett (LB) thin films. Taking advantage of the switching property, we have achieved reproducible nanometer-scale recording dots on rotaxane LB films via voltage application using a scanning tunneling microscope probe. The stable and easily controlled conductance switching makes the rotaxanes a hopeful candidate for nanorecording.     

Zig‐Zag Diphosphene Oligomers Linked by Silver(I) Cation

The coordination of silver cation to diphosphene Mes*P=PMes* ( 1 , Mes* = ^tBu₃C₆H₂) was investigated in detail. The reaction of 1 with Ag[Al(OR_F)₄] (OR_F = OC(CF₃)₃) in the ratios of 2 : 1, 3 : 2 and 1 : 2 led to the formation of the first cationic silver linked diphosphene complexes 2 — 4 . Complexes 2 and 3 contain two and three diphosphene molecules linked by the linear Ag(I) cation, respectively, and they feature unusual zig‐zag topologies. Complex 4 is a dinuclear silver complex, and each Ag(I) center features a tetrahedral geometry, coordinated by one phosphorus atom of diphosphene 1 and three chloro atoms of two CH₂Cl₂ molecules.     

Structure-direct assembly of hexagonal pencil-like ZnO group whiskers

Hexagonal ZnO group whiskers synthesized from Zn(NH₃)₄²⁺ precursor at 145°C in a structure-directing template solvent (2.5% v/v alcohol) show strong photoluminescence at 409 and 420 nm. FE-SEM and TEM observation reveals that the ZnO group whiskers consist of uniform pencil-like whiskers with the diameter of around 1.5 μm and the length of up to 6 μm.     

Core/shell particles containing 3-(methacryloxypropyl)-trimethoxysilane in the shell: synthesis, characterization, and application

In comparison to the corresponding single-component counterparts, core/shell particles are widely used due to their better physical and chemical properties. The surface properties of core/shell particles evidently play an important role in the process of application. It is easy to deduce that surface properties mostly depend on the properties of the component in the shell. Therefore, desirable materials of shell are very significant for the study of composite materials, especially in core/shell field. It is well known that polysiloxane has excellent properties, such as the water repellency, high flexibility, low surface energy, and biocompatibility. Its application, however, is limited due to poor cohesiveness and poor film-forming properties. Recently, much endeavor has been made to overcome such flaws. It is found that polyacrylate is commonly considered for its good cohesiveness and excellent film-forming property. The combination of polysiloxane and polyacrylate has been shown to be important in the composite material field, especially as core/shell particles. Unfortunately, their hydrophobicity is considerably different and thus, the core/shell particles consisting of polyacrylate (PA)/polysiloxane (PSi) are hard to prepare by general seeded emulsion polymerization, and are also scarcely available in the literature. In this study, the new core/shell PA/PSi particles with poly(butyl methacrylate) (PA) as the core and poly(3-(methacryloxypropyl)-trimethoxysilane) (PSi) as the shell were prepared by dispersion polymerization under the kinetically controlled conditions. The characterization of the particles by TEM, DSC, particle size analyzer as well as static contact angle confirmed the formation of core/shell structure. The application of core/shell (PA/PSi) particles also has been considered and discussed here.TEM micrographs of core/shell (PA/PSi) particles.     

Fluoro-substituted DPP-bisthiophene conjugated polymer with azides in the side chains as ambipolar semiconductor and photoresist

Photoresists are essential for the fabrication of flexible electronics through all-photolithographic processes. Single component semiconducting photoresist exhibits both semiconducting and photo-patterning properties, and as a result, the device fabrication process can be simplified. However, the design of semiconducting polymeric photoresist with ambipolar semiconducting property remains challenging. In this paper, we report a single component semiconducting photoresist (PFDPPF4T-N₃) by incorporating azide groups and noncovalent conformation locks into the side alkyl chains and conjugated backbones of a diketopyrrolopyrrole-based conjugated polymer, respectively. The results reveal that PFDPP4FT-N₃ exhibits ambipolar semiconducting property with hole and electron mobilities up to 1.12 and 1.17 cm² V^?1 s^?1, respectively. Moreover, field effect transistors with the individual photo-patterned thin films of PFDPPF4T-N₃ also show ambipolar semiconducting behavior with hole and electron mobilities up to 0.66 and 0.80 cm² V^?1 s^?1, respectively. These results offer a simple yet effective design strategy for high-performance single component semiconducting photoresists, which hold great potential for flexible electronics processed by all photolithography.