电子束产生大尺度等离子体过程的数值模拟研究

建立了一个四组分一维混合模型，对电子束注入大气产生大尺度等离子体的过程进行了数值模拟.结果表明了能量为140keV、流强为50mA/cm²的注入电子束，可以产生线度为0.5m，密度为10¹²cm^-3量级的大气环境下等离子体.电子束所伴随的空间电荷效应由于等离子体的产生会很快消失，不影响后续的等离子体产生过程.电子束注入流强主要影响产生等离子体的密度，而电子束能量则同时影响其空间线度和密度. 关键词： 电子束 碰撞 电离     

Theoretical Studies on the Si（001）-SiO2 Interface Structure

1 INTRODUCTION Silicon and its alloy have been widely applied in such fields as electronic industry, high-temperature structural ceramics, etc. In addition, the researches on silicon and its relevant materials greatly promote the rapid development of modern optics and infor- mation technology. Therefore, more and more at- tention is focused on the structure of silicon, oxide of silicon and the interfaces between silicon and metal or nonmetal. As an ideal passive film on the Si surface, S…     

粒子鉴别中dE/dx和TOF的权重

在北京谱仪数据分析中,粒子鉴别使用了dE/dx和TOF的信息.在利用dE/dx和TOF联合鉴别粒子时,通常的做法是把两者的χ²值等权重相加(χ²方法).在不同的动量区间,dE/dx和TOF对粒子的鉴别能力不同.本文给出两者联合鉴别时不同动量区间的权重,并构造一个新的线性变量来进行粒子鉴别     

C-V法提取SiC隐埋沟道MOSFET沟道载流子浓度

本文对用C-V法提取SiC隐埋沟道MOSFET沟道载流子浓度的方法进行了理论和实验分析. pn结的存在所造成的埋沟MOS结构C-V曲线的畸变为沟道载流子浓度的提取带来一些问题. SiC/SiO₂界面上界面态的存在也会使提取出的数值与实际数值产生偏差. 本文首先从理论上分别分析了沟道深度和界面态对沟道载流子浓度提取结果的影响，然后对两种沟道深度的埋沟MOS结构C-V曲线进行了测试，提取出了沟道掺杂浓度. 在测试中，采用不同的扫描速率，分析了界面态对提取结果的影响. 理论分析结果和实验测 关键词： C-V法 SiC 隐埋沟道MOSFET 沟道载流子浓度     

一类Marangoni对流边界层方程的近似解析解

利用Adomain解析拆分和Padé逼近方法对由Marangoni对流诱发的层流边界层问题进行了研究, 提供了一种求解边界层方程的解析分析方法. 得到了问题的近似解析解并对相应的流动及传热特性进行了探讨. 本文所提出的思想方法可以用于解决其他科学和工程技术问题. 关键词： Marangoni对流 非线性 Adomain拆分法 近似解析解     

Effect of carbon content on the microstructure and the cracking susceptibility of Fe-based laser-clad layer

The laser cladding of Fe-based alloys on a medium carbon steel substrate was performed using a CO₂ laser and Ar shielding gas that was blown into a molten pool. The microstructure and cracking susceptibility of the laser-clad layers were studied in terms of carbon additions. Results show that the small change of the carbon content in the alloy powders can obviously change the microstructure and properties of the layers. When the carbon content is in the range of 0.3–0.4 wt.%, the decrease of the carbon content in alloy powders will increase the hardness and toughness of the layers simultaneously under the same process parameters. As a result, crack-free coatings with high hardness can be obtained. As the carbon content increases from 0.2 wt.% to 0.4 wt.%, the segregation ratio of chromium increases, while the segregation ratios of nickel, manganese, and silicon first decrease and then increase. At the same time, a new designing principle concerning the composition and microstructure has been put forward, and the principal mechanisms of strengthening and toughening of the layers are fine-grain strengthening and low carbon martensitic phase transformation strengthening.     

Study on Inhibitors of Methionine Synthase Ⅷ: Synthesis of 2,5-Diamino-4-oxo-6- (3-butenyl) pyrimidine

Cobalamin-dependent methionine synthase plays a crucial role in folate metabolism and such would appear to be an excellent target for rational antifolate drug design. However, to date, no anticancer agents directed at this enzyme are available, but the enzyme is efficiently and specifically inhibited by N2O and this has proven invaluable for evaluating the biochemical consequence of enzyme inhibition and for mechanistic studies. [1,2] 2,5-Diamino-4-oxo-6-(3-butenyl) pyrimidine, a key intermediate in synthetic inhibitors of methionine synthase, was first synthesized using γbutenyl-β-ketoester and guanidine carbonate (Scheme 1). [3]     

具有HfN/HfO2栅结构的p型MOSFET中的负偏置-温度不稳定性研究

研究了HfN/HfO₂高K栅结构p型金属-氧化物-半导体(MOS)晶体管(MOSFET)中，负 偏置-温度应力引起的阈值电压不稳定性(NBTI)特征.HfN/HfO₂高K栅结构的等效 氧化层厚度(EOT)为1.3nm，内含原生缺陷密度较低.研究表明，由于所制备的HfN/HfO₂ 高K栅结构具有低的原生缺陷密度，因此在p-MOSFET器件中观察到的NBTI属HfN/HfO2高K栅结构的本征特征，而非工艺缺陷引起的；进一步研究表明，该HfN/HfO₂高K栅结构中观察到的NBTI与传统的SiO₂基栅介质p-MOSFET器件中观察 到的NBTI具有类似的特征，可以被所谓的反应-扩散(R-D)模型表征： HfN/HfO₂ 栅结构p-MOSFET器件的NBTI效应的起源可以归为衬底注入空穴诱导的界面反应机理，即在负 偏置和温度应力作用下，从Si衬底注入的空穴诱导了Si衬底界面Si-H键断裂这一化学反应的 发生，并由此产生了Si^＋陷阱在Si衬底界面的积累和H原子在介质层内部的扩散 ，这种Si^＋陷阱的界面积累和H原子的扩散导致了器件NBTI效应的发生. 关键词： 高K栅介质 负偏置-温度不稳定性(NBTI) 反应-扩散(R-D)模型     

磁性固体超强酸SO42-/ZrO2-Al2O3-Fe3O4的制备与性能研究

利用化学共沉淀法将磁性基质与固体酸组装制备磁性纳米固体超强酸催化剂，利用XRD、Raman、TG-DSC、M?ssbauer、TEM、HRTEM等手段对样品性质进行表征。结果表明：磁性基质的引入赋予固体超强酸以超顺磁性；Fe₃O₄、Al₂O₃粒子弥散在ZrO₂基质中，烧结过程中阻碍了扩散传质的进行以及晶界移动，抑制了ZrO₂晶体生长，稳定了四方晶相(T-ZrO₂)；样品粒径分布集中，平均约为32 nm；HRTEM显示T-ZrO₂晶体生长取向于(101)方向，晶面间距d(101)=0.29 nm；Hammett指示剂法测得经600 ℃焙烧后产物的酸强度H_o＜-13.8，酸强度大于浓硫酸(H_o=-11.93)。以柠檬酸三丁酯的合成作为磁性固体超强酸SO₄^2-/ZrO₂-Al₂O₃-Fe₃O₄催化剂的探针反应，结果表明外磁场的引入提高了柠檬酸的转化率。     

Affinity Chromatography of Insulin with a Heptapeptide Ligand Selected from Phage Display Library

A heptapeptide phage display library was screened with insulin to find its ligands for affinity chromatography. The peptide was synthesized and coupled to EAH Sepharose 4B (5.4 mol mL^–1 bed). Then, insulin chromatography was carried out with mobile phases of different pH values and by the addition of urea and ethylene glycol. It was found that electrostatic interactions were predominant for the affinity binding, and hydrogen bonding might also contribute somewhat to the affinity. Finally, frontal analysis was performed and the dynamic binding capacity of the affinity column for insulin at 50% breakthrough was estimated at 60.6 mg mL^–1 bed, which was about two times higher than the theoretical binding capacity of the monomeric insulin. The result suggests that insulin was bound in dimer state in a stoichiometric relationship with the coupled peptide, indicating the high binding efficiency of the peptide ligand for insulin.