Dependence of Quark Effective Mass on Gluon Propagators

Based on Dyson Schwinger Equations （DSEs） in the “rainbow” approximation, the dependence of quark effective mass on gluon propagator is investigated by use of three different phenomenological gluon propagators with two parameters, the strength parameter x and range parameter △. Our theoretical calculations for the quark effective mass Mf（p^2）, defined by the self-energy functions Af（p^2） and Bi（p%2） of the DSEs, show that the dynamically running quark effective mass is strongly dependent on gluon propagator. Therefore, because gluon propagator is completely unknown, the quark effective mass cannot be exactly determined theoretically.     

Bi_2O_3掺杂对Ag(Nb_(0.8)Ta_(0.2))O_3陶瓷结构和介电性能的影响(英文)

本文研究了Bi2O3掺杂对Ag(Nb0.8Ta0.2)O3陶瓷的结构和介电性能的影响。X射线衍射(XRD)结果表明,Bi2O3的掺杂可以使陶瓷中Ag+被还原并析出,且银析出的量随Bi2O3掺杂量的增加而不断增加,这可能源自于Bi3+对Ag+的取代。在一定范围内增大Bi2O3掺杂量可提高Ag(Nb0.8Ta0.2)O3陶瓷的室温介电常数,降低介电损耗,并使温度系数向负值方向移动。当Bi2O3的掺杂量约为3.5wt%时,样品具有较大的介电常数(ε=672)和较小的介电损耗(tanδ=7.3×10-4)。     

Role of gas cooling time on crystalline morphology and mechanical property of the HDPE parts prepared by gas-assisted injection molding

In this study, the hierarchical crystalline structures of high-density polyethylene (HDPE) samples molded by gas-assisted injection molding (GAIM) with different gas cooling times were characterized via scanning electron microscopy, two-dimensional wide-angle X-ray scattering, tensile testing techniques, and differential scanning calorimetry, respectively. It was found that the shish-kebab, the oriented lamellae, and common spherulite structures orderly distributed from the skin region to gas channel region of samples. More importantly, the wider area with highly oriented structure (shish-kebab) was obtained in the samples with longer gas cooling time, in that the longer gas cooling time tends to increase the cooling rate of polymer melt, and then much more stretched chains are retained. Although lower crystallinity, the higher degree of orientation, and much more shish-kebab structures lead to significant reinforcement from 28 to 785 MPa of the samples with gas cooling time of 0.5 s to 32 and 879 MPa of the samples with gas cooling time of 20 s for tensile strength and modulus, respectively. Finally, combined the HDPE molecular parameter with characteristic of the GAIM temperature field and flow field, the formation and stability of crystalline morphology in different regions of sample were discussed.     

大鼠体内复方清开灵代谢物的分析

建立了复方中药清开灵代谢物的液相色谱-质谱/质谱分析方法。采用Phenomenex Luna C18色谱柱,以0.1%甲酸(A)及V(甲醇)∶和V(乙腈)=4∶1混合液(B)作流动相,采用梯度洗脱(0 min,B为0%;33min,B为60%;66 min,B为88%;75 min,B为100%),流速:0.5 mL/min,离子阱质谱负离子模式进行检测。通过差谱方法对可能的代谢物进行快速搜索。对发现的重要的代谢物根据分子量以及多级质谱的碎片离子数据,结合体内代谢反应规律,进行指认和结构鉴定。共鉴定了3个主要的代谢物,其中一个为黄芩苷的代谢物,另两个为绿原酸的代谢物,后两个代谢物未见文献报道。本实验为研究复方中药复杂体系体内的代谢产物提供了一个有效而且快捷的模式。     

光谱法及热动力学法研究环糊精与三氟氯氰菊酯的包合作用

制备了β-环糊精(β-CD)-三氟氯氰菊酯(CHL)包合物,采用差示扫描量热分析法和核磁共振波谱法对包合物进行表征.实验采用1HNMR研究包合物的空间结构,推测出三氟氯氰菊酯同β-CD的包合方式是从大口端进入β-CD.用化学软件对β-CD与CHL包合方式计算发现,CHL从β-CD的大口端和小口端进入,总能量分别为108.1kJ/mol与129.2kJ/mol,表明CHL从β-CD的大口端进入形成的包合物能量最低,结构最稳定.在25℃下,实验测得β-CD-三氟氯氰菊酯包合物形成常数为340.6L?mol-1,包合比是1∶1.热动力学方法研究了温度变化对包合反应的影响,计算得出包合过程的焓变-50.29kJ?mol-1、熵变120.6J?K-1?mol-1及自由能变化-14.45kJ?mol-1,进而确定了包合反应的主要驱动力是焓.     

High-voltage SOI lateral MOSFET with a dual vertical field plate

A new silicon-on-insulator(SOI)power lateral MOSFET with a dual vertical field plate(VFP)in the oxide trench is proposed.The dual VFP modulates the distribution of the electric field in the drift region,which enhances the internal field of the drift region and increases the drift doping concentration of the drift region,resulting in remarkable improvements in breakdown voltage(BV)and specific on-resistance(Ron,sp).The mechanism of the VFP is analyzed and the characteristics of BV and Ron,spare discussed.It is shown that the BV of the proposed device increases from 389 V of the conventional device to 589 V,and the Ron,sp decreases from 366 m·cm2to 110 m·cm2.     

Compound buried layer SOI high voltage device with a step buried oxide

A silicon-on-insulator (SOI) high performance lateral double-diffusion metal oxide semiconductor (LDMOS) on a compound buried layer (CBL) with a step buried oxide (SBO CBL SOI) is proposed.The step buried oxide locates holes in the top interface of the upper buried oxide (UBO) layer.Furthermore,holes with high density are collected in the interface between the polysilicon layer and the lower buried oxide (LBO) layer.Consequently,the electric fields in both the thin LBO and the thick UBO are enhanced by these holes,leading to an improved breakdown voltage.The breakdown voltage of the SBO CBL SOI LDMOS increases to 847 V from the 477 V of a conventional SOI with the same thicknesses of SOI layer and the buried oxide layer.Moreover,SBO CBL SOI can also reduce the self-heating effect.     

Aggregation Behaviour of Cationic Diblock Copolymer （MTAC）10（BA）16： MesoDyn Simulation Study

The aggregation behaviour of an amphiphilic cationic block copolymer （MTAC）10（BA）16 in aqueous solution is investigated by MesoDyn simulation. Simulation results show that （MTAC）10 （BA）16 can form spherical, irregular and network aggregates with the increasing volume fraction. The time evolution of order parameter shows that the process of aggregate formation can be divided into diffusion control stage and hydrophobic interaction control stage, while the time evolution of energy indicates that the aggregate formation is driven by enthalpy but not entropy. The order parameter of the hydrophobic blocks BA increases with the increasing （MTAC）10（BA）16 concentration, while the time needed for system balance has the contrary trend.     

十溴联苯醚与牛血清白蛋白相互作用的荧光光谱研究

在模拟生理条件下,采用荧光光谱法研究十溴联苯醚(Deca-BDE)与牛血清白蛋白(BSA)的相互作用.结果表明: Deca-BDE对BSA的内源荧光有静态猝灭作用.Deca-BDE与BSA在277, 298和310 K的结合常数分别为1.92×105, 1.97×105和2.16×105 L/mol.Deca-BDE在BSA接近于色氨酸残基附近有2个结合位点.热力学参数表明, Deca-BDE与BSA相结合的主要驱动力是疏水作用力. 与Deca-BDE结合后,BSA色氨酸残基附近肽键伸展程度增加,蛋白分子结构疏松.     

Ultra-low on-resistance high voltage (>600 V) SOI MOSFET with a reduced cell pitch

A low specific on-resistance (R S,on) silicon-on-insulator (SOI) trench MOSFET (metal-oxide-semiconductor-field-effect-transistor) with a reduced cell pitch is proposed.The lateral MOSFET features multiple trenches:two oxide trenches in the drift region and a trench gate extended to the buried oxide (BOX) (SOI MT MOSFET).Firstly,the oxide trenches increase the average electric field strength along the x direction due to lower permittivity of oxide compared with that of Si;secondly,the oxide trenches cause multiple-directional depletion,which improves the electric field distribution and enhances the reduced surface field (RESURF) effect in the SOI layer.Both of them result in a high breakdown voltage (BV).Thirdly,the oxide trenches cause the drift region to be folded in the vertical direction,leading to a shortened cell pitch and a reduced R S,on.Fourthly,the trench gate extended to the BOX further reduces R S,on,owing to the electron accumulation layer.The BV of the MT MOSFET increases from 309 V for a conventional SOI lateral double diffused metal-oxide semiconductor (LDMOS) to 632 V at the same half cell pitch of 21.5 μm,and R S,on decreases from 419 m · cm 2 to 36.6 m · cm 2.The proposed structure can also help to dramatically reduce the cell pitch at the same breakdown voltage.