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Guangwei Guo Guangze Tang Yajun WangXinxin Ma Mingren SunLiqin Wang Ken Yukimura 《Applied Surface Science》2011,257(10):4738-4742
a-C:H films were prepared by middle frequency plasma chemical vapor deposition (MF-PCVD) on silicon substrates from two hydrocarbon source gases, CH4 and a mixture of C2H2 + H2, at varying bias voltage amplitudes. Raman spectroscopy shows that the structure of the a-C:H films deposited from these two precursors is different. For the films deposited from CH4, the G peak position around 1520 cm−1 and the small intensity ratio of D peak to G peak (I(D)/I(G)) indicate that the C-C sp3 fraction in this film is about 20 at.%. These films are diamond-like a-C:H films. For the films deposited from C2H2 + H2, the Raman results indicate that their structure is close to graphite-like amorphous carbon. The hardness and elastic modulus of the films deposited from CH4 increase with increasing bias voltage, while a decrease of hardness and elastic modulus of the films deposited from a mixture of C2H2 + H2 with increasing bias voltage is observed. 相似文献
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