Interpretation of transport measurements in ZnO-thin films

In order to interpret results of temperature dependent Hall measurements in heteroepitaxial ZnO-thin films, we adopted a multilayer conductivity model considering carrier-transport through the interfacial layer with degenerate electron gas as well as the upper part of ZnO layers with lower conductivity. This model was applied to the temperature dependence of the carrier concentration and mobility measured by Hall effect in a ZnO-layer grown on c-sapphire with conventional high-temperature MgO and low-temperature ZnO buffer. We also compared our results with the results of maximum entropy mobility-spectrum analysis (MEMSA). The formation of the highly conductive interfacial layer was explained by analysis of transmission electron microscopy (TEM) images taken from similar layers.     

Fabrication and characterization of n-ZnO on p-SiC heterojunction diodes on 4H-SiC substrates

We report on the growth and characterization of n-ZnO/p-4H-SiC heterojunction diodes. Our n-ZnO layers were grown with radical-source molecular beam epitaxy (RS-MBE) on p-4H-SiC epilayers, which was previously prepared in a horizontal hot-wall reactor by chemical vapour deposition (CVD) on the n-type 4H-SiC wafers. Details on the n-ZnO growth on 8-off 4H-SiC wafers, the quality of the layers and the nature of realized p–n structures are discussed. Mesa diode structures were fabricated. Al was sputtered through a circle mask with diameter 1 mm and annealed to form Ohmic contacts to p-SiC. Ohmic contacts to the n-ZnO were formed by 30 nm/300 nm Ti/Au sputtered by electron beam evaporation. Electrical properties of the structures obtained have been studied with Hall measurements, and current–voltage measurements (I–V). I–V measurements of the device showed good rectifying behavior, from which a turn-on voltage of about 2 V was obtained.     

Simulation of ultrasonic pulse propagation, distortion, and attenuation in the human chest wall

A finite-difference time-domain model for ultrasonic pulse propagation through soft tissue has been extended to incorporate absorption effects as well as longitudinal-wave propagation in cartilage and bone. This extended model has been used to simulate ultrasonic propagation through anatomically detailed representations of chest wall structure. The inhomogeneous chest wall tissue is represented by two-dimensional maps determined by staining chest wall cross sections to distinguish between tissue types, digitally scanning the stained cross sections, and mapping each pixel of the scanned images to fat, muscle, connective tissue, cartilage, or bone. Each pixel of the tissue map is then assigned a sound speed, density, and absorption value determined from published measurements and assumed to be representative of the local tissue type. Computational results for energy level fluctuations and arrival time fluctuations show qualitative agreement with measurements performed on the same specimens, but show significantly less waveform distortion than measurements. Visualization of simulated tissue-ultrasound interactions in the chest wall shows possible mechanisms for image aberration in echocardiography, including effects associated with reflection and diffraction caused by rib structures. A comparison of distortion effects for varying pulse center frequencies shows that, for soft tissue paths through the chest wall, energy level and waveform distortion increase markedly with rising ultrasonic frequency and that arrival-time fluctuations increase to a lesser degree.     

Hydrogen control of ferromagnetism in a dilute magnetic semiconductor

We show that upon exposure to a remote dc hydrogen plasma, the magnetic and electronic properties of the dilute magnetic semiconductor Ga1-xMnxAs change qualitatively. While the as-grown Ga1-xMnxAs thin films are ferromagnetic at temperatures T less, similar 70 K, the samples are found to be paramagnetic after the hydrogenation, with a Brillouin-type magnetization curve even at T=2 K. Comparing magnetization and electronic transport measurements, we conclude that the density of free holes p is significantly reduced by the plasma process, while the density of Mn magnetic moments does not change.     

Spectral estimation for characterization of acoustic aberration

Spectral estimation based on acoustic backscatter from a motionless stochastic medium is described for characterization of aberration in ultrasonic imaging. The underlying assumptions for the estimation are: The correlation length of the medium is short compared to the length of the transmitted acoustic pulse, an isoplanatic region of sufficient size exists around the focal point, and the backscatter can be modeled as an ergodic stochastic process. The motivation for this work is ultrasonic imaging with aberration correction. Measurements were performed using a two-dimensional array system with 80 x 80 transducer elements and an element pitch of 0.6 mm. The f number for the measurements was 1.2 and the center frequency was 3.0 MHz with a 53% bandwidth. Relative phase of aberration was extracted from estimated cross spectra using a robust least-mean-square-error method based on an orthogonal expansion of the phase differences of neighboring wave forms as a function of frequency. Estimates of cross-spectrum phase from measurements of random scattering through a tissue-mimicking aberrator have confidence bands approximately +/- 5 degrees wide. Both phase and magnitude are in good agreement with a reference characterization obtained from a point scatterer.     

Fabrication of ZnO nanorod-based p–n heterojunction on SiC substrate

Due to the special properties of ZnO and numerous envisaged areas of application of its nanostructures, much effort has been made in fabricating ZnO nanostructures. The next challenging step seems to be the processing and hence realisation of devices based on the nanostructure. We have grown ZnO nanorods of high crystal quality and good optical properties on 6H-SiC and 4H-SiC substrates. Considering the p–n junction as a basis for electronic and optoelectronic devices, we realised ohmic contacts on p-type 4H-SiC and fabricated ZnO nanorod-based p–n heterojunctions with the p-type 4H-SiC serving as the hole-conducting region. Nanorod-based p–n diodes with a turn-on voltage of 1.8 V and relatively large reverse-bias breakdown voltage were obtained, thus suggesting both the possibility of ZnO nanorod-based ultraviolet photodetectors and light-emitting devices, and the miniaturisation of device scales.