Low-temperature ultrafast mobility in systems with long-range repulsive interactions: Pb/Si(111)

A realization of the numerous phases predicted in systems with long-range repulsive interactions was recently found in Pb/Si(111). Surprisingly, these numerous phases can be grown at low temperatures approximately 40 K over macroscopic distances. This unusual observation can be explained from theoretical calculations of the collective diffusion coefficient D(c) in systems with long-range repulsive interactions. Instead of a gradual dependence of D(c) on coverage, it was found that D(c) has sharp maxima at low temperatures for every stable phase (i.e., for every rational value of the coverage theta=p/q) in agreement with the experiment.     

"Devil's staircase" in Pb/Si(111) ordered phases

With scanning tunneling microscopy we have found that ordered phases in Pb/Si(111) are one of the best examples of the "devil's staircase" phase diagram. Phases within a narrow coverage range (1.2相似文献   

Correlations between the scanning tunneling microscopy imaged configurations and the electronic structure on stepped Si(111)-( 7x7) surfaces

We have observed the dependence of the scanning tunneling microscopy (STM) imaged atom intensity within the (7x7) unit cell on stepped Si(111) as a function of the tunneling voltage. Pronounced differences from the corresponding atom intensity on the flat surface are observed for the contrast of atoms on the low versus the high side of the step and for the contrast between the faulted versus unfaulted subcells of the (7x7) structure. These differences can be accounted for by changes in the electronic structure within the (7x7) subcells adjacent to the step. Calculations of the local density of states and the STM images using a tight-binding method are in excellent agreement with the experimental results.     

Determination of interlayer diffusion parameters for Ag/Ag(111)

It is well known that the Ag/Ag(111) epitaxial system grows three dimensionally because of the existence of a relatively high excess diffusion barrier, DeltaE(s) = 0.13 eV, at the step edges. Several experimental methods have been developed to measure the step edge barrier in this system over a wide coverage range. The probability for an atom to move from a higher to a lower layer depends on both the barrier and the prefactor, so it is important to test whether the prefactors for hopping over a step, nu(s), and for hopping on a terrace, nu(t), are different. We present the results from several experiments on Ag/Ag(111) to conclude that nu(s)/nu(t) = 10(2.0+/-0. 3).     

Monte carlo simulations of growth modes of Pb nanoislands on Si(111) surface

The growth of Pb islands on a Si(111) surface exhibits many interesting properties. For example, the self-assembled process results in a homogeneous distribution of Pb islands with uniform height. The dependence of this height on coverage and temperature can be expressed as a phase diagram [1]. In this paper we develop a model of the growth process that reflects the main features of the experimental observations and determines the key processes of quantum dot formation in a Pb/Si(111) system. The growth of islands is simulated by the Monte Carlo method. With suitably chosen parameters the model is able to reconstruct the phase diagram, via the dependence of the dynamics of Pb atoms on area and height. These dependencies are attributed to stress energy and quantum size effects.     

Metals on graphene: correlation between adatom adsorption behavior and growth morphology

We present a systematic study of metal adatom adsorption on graphene by ab initio calculations. The calculations cover alkali metals, sp-simple metals, 3d and group 10 transition metals, noble metals, as well as rare earth metals. The correlation between the adatom adsorption properties and the growth morphology of the metals on graphene is also investigated. We show that the growth morphology is related to the ratio of the metal adsorption energy to its bulk cohesive energy (E(a)/E(c)) and the diffusion barrier (ΔE) of the metal adatom on graphene. Charge transfer, electric dipole and magnetic moments, and graphene lattice distortion induced by metal adsorption would also affect the growth morphologies of the metal islands. We also show that most of the metal nanostructures on graphene would be thermally stable against coarsening.     

Influence of quantum size effects on island coarsening

Surface x-ray scattering and scanning-tunneling microscopy experiments reveal novel coarsening behavior of Pb nanocrystals grown on Si(111)-(7 x 7). It is found that quantum size effects lead to the breakdown of the classical Gibbs-Thomson analysis. This is manifested by the lack of scaling of the island densities. In addition, island decay times tau are orders of magnitude faster than expected from the classical analysis and have an unusual dependence on the growth flux F (i.e., tau is approximately 1/F). As a result, a highly monodispersed 7-layer island height distribution is found after coarsening if the islands are grown at high rather than low flux rates. These results have important implications, especially at low temperatures, for the controlled growth and self-organization of nanostructures.     

Desorption or disordering from diffraction peak intensity decay?

When an ordered overlayer is heated at a high enough temperature, there is loss of order that can be monitored through the decay of the peak intensity of diffraction spots. This is caused by either particle loss to the gas phase or the onset of diffusion that disorders the overlayer. With the use of model simulations on a c(2 × 2) ordered overlayer, we show how the peak intensity decay can differentiate between the two cases. We further examine the growth laws describing the growth of disorder to see if they obey similar laws as the reverse ordering processes. When no interfaces separating degenerate phases are present, disordering and ordering processes do not obey the same growth laws.