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1.
2.
A design of diode-pumped high-efficiency Nd:YVO4/LBO red laser is reported. Using critical phase-matching (CPM) LBO, 671 nm red laser was obtained from 1342 nm light by intracavity frequency doubling. With an incident pump laser of 800 mW, using type-I and type-II CPM LBO, 97 and 52 mWTEM00 mode red laser outputs were obtained, with optical-to-optical conversion efficiencies of up to 12.1% and 6.5%, respectively. 相似文献
3.
Songxin Tan Ram M. Narayanan Sunil K. Shetty 《International Journal of Infrared and Millimeter Waves》2005,26(8):1175-1194
There is growing interest in the use of lidar for remote sensing of vegetation owing to the emergence of reliable and rugged lasers and highly sensitive detectors. Lidar remote sensing has a distinct advantage over conventional techniques in vegetation remote sensing due to its capability for three-dimensional characterization of vegetative targets. The Multiwavelength Airborne Polarimetric Lidar (MAPL) system was developed primarily for vegetation remote sensing applications from an airborne platform of up to 1,000 -m altitude. The lidar system has full waveform capture and polarimetric measurement capability at two wavelengths in the near-infrared (1064 nm) and the green (532 nm) spectral regions. This study presents preliminary ground-based lidar reflectance measurements on a variety of deciduous and coniferous trees under fully foliated conditions with a view towards tree species discrimination. Variations in the reflectance characteristics of selected deciduous trees under unfoliated and fully foliated conditions were also investigated. Our study reveals distinct differences in the reflectance characteristics of various trees. 相似文献
4.
K. Venkatakrishnan B.K.A. Ngoi P. Stanley L.E.N. Lim B. Tan N.R. Sivakumar 《Applied Physics A: Materials Science & Processing》2002,75(4):493-496
Photomasks are the backbone of microfabrication industries. Currently they are fabricated by a lithographic process, which
is very expensive and time consuming since it is a multi-step process. These issues can be addressed by fabricating photomasks
by direct femtosecond laser writing, which is a single-step process and comparatively cheaper and faster than lithography.
In this paper we discuss our investigations on the effect of two types of laser writing techniques, namely front- and rear-side
laser writing, with regard to the feature size and the edge quality of a feature. It is proved conclusively that for the patterning
of masks, front-side laser writing is a better technique than rear-side laser writing with regard to smaller feature size
and better edge quality. Moreover the energy required for front-side laser writing is considerably lower than that for rear-side
laser writing.
Received: 22 May 2001 / Accepted: 14 September 2001 / Published online: 17 October 2001 相似文献
5.
The new phenylpropanoid diglycoside ligusinenoside A ( 1 ), and the two new 8,4′‐oxyneolignan(‘8‐O‐4′‐neolignan’) diglycosides ligusinenosides B ( 2 ) and C ( 3 ), together with nine known compounds, were isolated from the rhizomes of Ligusticum sinensis Oliv. The structures of 1 – 3 were elucidated on the basis of spectroscopic analyses. 相似文献
6.
Using the theoretically calculated point-defect total-energy values of Baraff and Schlüter in GaAs, anamphoteric-defect model has been proposed by Walukiewicz to explain a large number of experimental results. The suggested amphoteric-defect system consists of two point-defect species capable of transforming into each other: the doubly negatively charged Ga vacancyV
Ga
2–
and the triply positively charged defect complex (ASGa+V
As)3+, with AsGa being the antisite defect of an As atom occupying a Ga site andV
As being an As vacancy. When present in sufficiently high concentrations, the amphoteric defect systemV
Ga
2–
/(AsGa+V
As)3+ is supposed to be able to pin the GaAs Fermi level at approximately theE
v
+0.6 eV level position, which requires that the net free energy of theV
Ga/(AsGa+V
As) defect system to be minimum at the same Fermi-level position. We have carried out a quantitative study of the net energy of this defect system in accordance with the individual point-defect total-energy results of Baraff and Schlüter, and found that the minimum net defect-system-energy position is located at about theE
v
+1.2 eV level position instead of the neededE
v
+0.6 eV position. Therefore, the validity of the amphoteric-defect model is in doubt. We have proposed a simple criterion for determining the Fermi-level pinning position in the deeper part of the GaAs band gap due to two oppositely charged point-defect species, which should be useful in the future. 相似文献
7.
8.
Using kinetic Monte Carlo method, we have simulated a pulsed energetic growth process in pulsed laser deposition. During the growth of film, substrate temperature mainly influences upon film morphology by directly enhancing the adatom mobility through the temperature-dependent thermal vibration. By contrast, the effect of incidence kinetic energy on film growth is complex resulting from the collisions between the incident particles and the adatoms. The results show that improving incident kinetic energy cannot significantly accelerate the migration rate of adatom but change surface microstructure and promote single adatom formation resulting in more island aggregation density. Moreover, since pulse-influx characterizes pulsed laser deposition, the intensity per pulse contributes to the evolvement of nucleation density and the results illustrate that a general scaling law different from ordinary power law still exists in energetic growth of pulsed laser deposition. 相似文献
9.
关于方程(1)的极限环唯多性问题,不少人作了研究,[1]引进“n重互相包含”曲线类,,经[2]的改进获得较好的结果,但这类曲线要求的条件较多。本文不从[1]的观点出发,不包含[1]的全部条件,独立地用①11。’,LtnnoB变换折叠相平面,据轨线与折叠线交点的位置,对(1)的等价方程按线性方程积分,将积分的正负项作成比值进行比较,得出一组充分条件。 相似文献
10.
Laser Doppler vibrometer (LVD) has been the most favorite instrument for precision dynamics measurement due to its non-contact, high accuracy and high resolution. However, LDV can only give the dynamic data of a particular location on the entire feature. In order to get the whole field data, a laser beam-scanning mechanism has to be implemented. Currently, motor-driven scanning mirror is used to move the measurement probe from one point to another. The mechanical vibrations of the scanning mirror will reduce the measurement accuracy. This paper introduces a novel scanning LDV optical system embodied in an acousto-optic deflector scanning mechanism. It can improve the measurement accuracy since there is no mechanical motion involved. One main advantage of this system is that it generates a laser scanning beam in parallel that is different from the beam scanning in the conventional scanning laser Doppler vibrometer (SLDV). The new system has a board scanning range. The measurement target size ranges from few tens of millimeters down to 10 μm. We have demonstrated the capability of the novel system on scanning measurements of features as big as ultra-precision cutting tool to features as tiny as AFM cantilever. We believe that the novel SLDV will find profound potential applications in the precision engineering field. 相似文献