Electron-hole coupling and the charge density wave transition in TiSe2

Angle-resolved photoemission is employed to measure the band structure of TiSe2 in order to clarify the nature of the ( 2 x 2 x 2) charge density wave transition. The results show a very small indirect gap in the normal phase transforming into a larger indirect gap at a different location in the Brillouin zone. Fermi surface topology is irrelevant in this case. Instead, electron-hole coupling together with a novel indirect Jahn-Teller effect drives the transition.     

Controlling the thermal stability of thin films by interfacial engineering

The quantized electronic structure in Pb films on Si(111) varies substantially as the film thickness increases. The changes in electronic energy cause the thermal stability of the films to oscillate with an approximate bilayer period. The phase of the oscillations can be controlled by interfacial engineering. Comparison of Pb films prepared on Si(111) terminated by In, Au, and Pb as interfactants reveals a phase reversal. For , films made of odd numbers of atomic layers (5, 7, and 9) are more stable than the even ones. This trend is reversed for the other two cases.     

Alternating layer and island growth of Pb on Si by spontaneous quantum phase separation

Real-time in situ x-ray studies of continuous Pb deposition on Si(111)-(7x7) at 180 K reveal an unusual growth behavior. A wetting layer forms first to cover the entire surface. Then islands of a fairly uniform height of about five monolayers form on top of the wetting layer and grow to fill the surface. The growth then switches to a layer-by-layer mode upon further deposition. This behavior of alternating layer and island growth can be attributed to spontaneous quantum phase separation based on a first-principles calculation of the system energy.     

Visualizing electronic chirality and Berry phases in graphene systems using photoemission with circularly polarized light

Electronic chirality near the Dirac point is a key property of graphene systems, which is revealed by the spectral intensity patterns as measured by angle-resolved photoemission spectroscopy under various polarization conditions. Specifically, the strongly modulated circular patterns for monolayer (bilayer) graphene rotate by ±90° (±45°) in changing from linearly to circularly polarized light; these angles are directly related to the phases of the wave functions and thus visually confirm the Berry's phase of π (2π) around the Dirac point. The details are verified by calculations.     

Direct mapping of phonon dispersion relations in copper by momentum-resolved x-ray calorimetry

We have developed a new method of mapping phonon dispersion relations based on momentum-resolved x-ray calorimetry. X-ray scattering intensities are measured at selected points in reciprocal space with suitably chosen polarization configurations; the thermal part of the scattering intensity is extracted by scanning the temperature of the sample. The intensity variations, governed by the phonon populations, are analyzed to yield the energies of the phonons. This method is applied to copper. With high-order effects under control, the results are in excellent agreement with the known phonon dispersion relations.     

Sublimation of atomic layers from a chromium surface

We employ low-energy electron microscopy to study the kinetics of thermal etching, or sublimation, of Cr(001) at approximately 1100 K. Atomic layers are removed from the surface by spontaneous nucleation and growth of two-dimensional vacancy islands, by rotation of spiral steps, and by island decay. The growth rates of vacancy islands and the rotation frequencies of double spirals are measured as a function of temperature, and the results are correlated with activation barriers of surface processes. Mass transport between the surface and bulk is shown to be unimportant.     

Modification of surface states in ultrathin films via hybridization with the substrate: a study of Ag on Ge

The Shockley surface state of Ag(111) develops unusual band dispersion relations for Ag films of decreasing thicknesses on Ge(111), as observed by angle-resolved photoemission. Its parabolic dispersion in the thick-film limit shifts toward higher binding energies and splits into multiple bands with dispersions that reflect the valence band structure of Ge including the heavy-hole, light-hole, and split-off bands. The results are explained in terms of a hybridization interaction between the Ag surface state and the Ge substrate states.     

Atomistic view of the recombinative desorption of H2 from H/Si(100)

Scanning tunneling microscopy is employed to investigate the recombinative desorption of H2 from hydrogenated Si(100) surfaces consisting of dihydride (SiH2) and monohydride (SiH) surface species organized in (1 x 1), (3 x 1), and (2 x 1) configurations. The results show that desorption from dihydrides involves a pair of neighboring dihydrides linked along the tetrahedral bond direction. Dihydrides in (3 x 1) domains are separated in the same direction by monohydrides, and desorption from a pair is geometrically impossible. The same desorption mechanism nevertheless applies via first a position switching of dihydrides with neighboring monohydrides.     

Flowshop scheduling problem to minimize total completion time with random and bounded processing times

The flowshop scheduling problems with n jobs processed on two or three machines, and with two jobs processed on k machines are addressed where jobs have random and bounded processing times. The probability distributions of random processing times are unknown, and only the lower and upper bounds of processing times are given before scheduling. In such cases, there may not exist a unique schedule that remains optimal for all feasible realizations of the processing times, and therefore, a set of schedules has to be considered which dominates all other schedules for the given criterion. We obtain sufficient conditions when transposition of two jobs minimizes total completion time for the cases of two and three machines. The geometrical approach is utilized for flowshop problem with two jobs and k machines.     

Chemical tuning of metal-semiconductor interfaces

We report a study of the Schottky barrier for Pb films grown on Si surfaces terminated by various metals (Ag, In, Au, and Pb) to explore the atomic-scale physics of the interface barrier and a means to control the barrier height. Electronic confinement by the Schottky barrier results in quantum well states in the Pb films, which are measured by angle-resolved photoemission. The barrier height is determined from the atomic-layer-resolved energy levels and the line widths. A calculation based on the known interface chemistry and the electronegativity yields predicted barrier heights in good agreement with the experiment.