Linear and nonlinear optical properties of semiconductor quantum wells

In this article we review the experimental and theoretical investigations of the linear and nonlinear optical properties of semiconductor quantum well structures, including the effects of electrostatic fields, extrinsic carriers and real or virtual photocarriers.     

Calculation of the intensity-dependent changes of the index of refraction in GaAS

In order to explain the recently observed optical bistability in GaAs we calculate the intensity-dependent changes of the index of refraction on the basis of the previously developed many-body theory of the gain and absorption spectra of highly excited direct-gap semiconductors.     

Excitons and electron-hole plasma in quasi-two-dimensional systems

A theoretical study of many-body effects in quasi-two-dimensional electron-hole systems is presented. The renormalized single-particle energies and the exciton binding energy are calculated as functions of the carrier density and temperature. A simple model for the nonlinear excitonic absorption and refraction is proposed.