HfO2/AlGaN/GaN structures with HfO2 deposited at ultra low pressure using an e‐beam

We show that HfO₂/AlGaN/GaN structures with HfO₂ layer deposited using an e‐beam in ultra high vacuum are suitable for field effect transistors. The dielectric constant of the HfO₂ was found ε_HfO > 23–24, which is close to the highest re‐ ported values for this material. The leakage current did not exceed 10^–4 A/cm² at the threshold voltage. The comparison of the losses in the samples with and without HfO₂ indicates low concentration of the interface traps. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

The cyclodimerisation of 3-methyl-2-butenenitrile

3-Methyl-2-butenenitrile (1) cyclodimerised on treatment with lithium diisopropylamide in dimethoxyethane at temperatures between ?78°C and 0°C to 3-amino-4-cyano-1,5,5-trimethyl-1,3-cyclohexadiene (2) the structure of which was established by acid hydrolysis to the known 4-cyano-1,5,5-trimethyl-1-cyclohexene-3-one (3).     

Conical parametric scattering of a single extraordinary beam in BaTiO3 crystal

In this paper, the parametric scattering of a single extraordinary polarized beam of laser in BaTiO₃ photorefractive crystal has been investigated experimentally and theoretically. The resulting pattern consists of beam fanning, isotropic ring, and anisotropic one. Among all parts of scattering pattern, isotropic ring has not been studied as much as beam fanning and anisotropic ring, and there still are some differences in reports about it. Therefore, the study has mainly focused on this part. In this experimental configuration, isotropic ring is just visible in positive angles although the other parts of parametric scattering pattern can be visible from behind and in front of the crystal. In addition to steady state pattern in forward and backward directions, its transient behavior with the rotation of crystal has been studied. The results of experiments have been analyzed carefully, and their theoretical explanations have been presented based on the standard theory of parametric scattering in photorefractive crystals. It has been shown that this configuration corresponds to the so called parametric B-process scattering.     

Bound exciton diffusion in Si : B

Photoluminescence measurements as a function of excitation intensity and temperature are presented for moderately doped Si : B. Some evidence is obtained for hopping motion of the bound excitons around the impurity centers with trapping at the clusters of impurities. Kinetic parameters of the excitation transfer are estimated.     

Self-chemical ionization of diethylzinc

The self-chemical ionization of diethylzinc is examined by Fourier transform ion cyclotron resonance (FT-ICR) mass spectrometry and semiempirical molecular orbital calculations. Electron impact of diethylzinc neutral produces the radical cation, C(4)H(15)Zn(+) (m/z x 122), which reacts further with the neutral (C(2)H(5))(2)Zn to give the following product ions: Zn(+) (m/z x 64), C(2)H(5)Zn(+) (m/z x 93), C(4)H(9)Zn(+) (m/z x 121), C(4)H(11)Zn(2)(+) (m/z x 187), and C(6)H(15)Zn(2)(+) (m/z x 215). To determine the structure and pathways for production of these ions, monoisotopic (12)C(4)H(15)(64)Zn(+), (64)Zn(+) and (12)C(2)H(5)(64)Zn(+) were individually isolated and reacted with the neutral background. We also performed semiempirical molecular orbital calculations (ZINDO/1). The molecular orbital calculations and experimental data are consistent in predicting that the ethyl group on the diethylzinc cation carries the positive charge. Copyright 1999 John Wiley & Sons, Ltd.     

怀孕期头发中一些元素含量的变化趋势

用同步辐射激发X射线荧光分析,对11个产妇怀孕期间头发内一些元素含量的变化趋势进行了测量,在各自对比的基础上,得到了一些结果。     

Hole mobility and remote scattering in strained InGaSb quantum well MOSFET channels with Al2O3 oxide

Hall mobility and major scattering mechanisms in surface and buried MBE grown strained InGaSb quantum well (QW) MOSFET channels with in‐situ grown Al₂O₃ gate oxide are analyzed as a function of sheet hole density, top‐barrier thickness and temperature. Mobility dependence on Al_0.8Ga_0.2Sb top‐barrier thickness shows that the relative contribution of interface‐related scattering is as low as ～30% in the surface QW channel. An InAs top capping layer reduces the interface scattering even further; the sample with 3 nm total top‐barrier thickness demonstrates mobility of 980 cm²/Vs giving sheet resistance of 4.3 kΩ/sq, very close to the minimum QW resistance in the bulk. The mobility–temperature dependences indicate that the interface‐related scattering is dominated by remote Coulomb scattering at hole densities <1 × 10¹² cm^–2. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

In silico targeting PAD4 for the treatment of rheumatoid arthritis

Structural Chemistry - Rheumatoid arthritis (RA) is an autoimmune disorder that causes chronic inflammation with periodic bursts of activity in multiple synovial joints which lead to irreversible...     

Nuclear orbiting and anomalies in nuclear reactions

In this paper, we report our measurements of back-angle oxygen and carbon particle yields from ¹⁶O+⁸⁹Y, ¹²C+⁹³Nb reactions forming the same compound nucleus ¹⁰⁵Ag at the same excitation energy and spin distribution. We find anomalously large oxygen yield and entrance channel dependence at high excitation energies from ¹⁶O+⁸⁹Y reaction implying formation of a dinuclear orbiting complex. Possible connection between nuclear orbiting and fast fission is also discussed.